公开(公告)号：EP4195287A1

公开(公告)日：2023-06-14

申请号：EP22205725.9

申请日：2022-11-07

Applicant: GlobalFoundries U.S. Inc.

Inventor： Levy, Mark.D ,  Krishnasamy, Rajendran ,  Zierak, Michael J. ,  Adusumilli, Siva P.

IPC: H01L29/417 ,  H01L29/732 ,  H01L29/78 ,  H01L29/06 ,  H01L23/367

Abstract: A structure, comprising, an electrical device, in particular a bipolar transistor (104) an active contact (130A, 130B) landed on a portion, the emitter (106), of the electrical device, the active contact including a first body (130A, 130B) of a first material and a thermal dissipation pillar (150) adjacent the active contact, the thermal dissipation pillar unlanded on, i.e. not electrically or mechanically connected to, but but over the portion (106) of the electrical device, the thermal dissipation pillar including a second body of a second material, for example Cu, having a higher thermal conductivity than the first material, for example W or Co. This is not merely applicable to the emitter but equally to the collector of a bipolar transistor, as well as to contacts of other electric devices like MOSFETs or polysilicon resistors.