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公开(公告)号：US10439363B2
公开(公告)日：2019-10-08
申请号：US16121825
申请日：2018-09-05
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Akio Ito , Kazuue Fujita , Daisuke Kawaguchi , Tatsuo Dougakiuchi , Tadataka Edamura
Abstract: A method of manufacturing a quantum cascade laser beam source (1) includes: preparing a semiconductor stacked body (20); forming a pair of first excavated portions (41 and 42) and a ridge portion which is interposed between the pair of first excavated portions (41 and 42); forming channel structures (51 and 52) and circumferential edge portions (61 and 62) which are formed to interpose the channel structures (51 and 52) between the ridge portion (30) and the circumferential edge portion; forming an electrode pattern (81) in contact with a first area (29a) and forming an electrode pattern (82) in contact with a second area (22a); fixing a crystal growth surface side to a support substrate (91); removing an Fe-doped (semi-insulating) InP single-crystal substrate (21); fixing a Si substrate (93); and peeling the support substrate (91).
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公开(公告)号：US09276144B2
公开(公告)日：2016-03-01
申请号：US14525415
申请日：2014-10-28
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Kazuue Fujita , Toru Hirohata , Tadataka Edamura , Tatsuo Dougakiuchi
IPC: H01L31/00 , H01L31/0352 , H01L31/09 , H01L31/105 , H01L31/0687
CPC classification number: H01L31/035236 , H01L31/06875 , H01L31/09 , H01L31/105
Abstract: A quantum cascade detector includes a semiconductor substrate, and an active layer formed by laminating unit laminate structures each having an absorption region with a first barrier layer to a second well layer and a transport region with a third barrier layer to an n-th well layer. A second absorption well layer has a layer thickness ½ or less of that of a first absorption well layer thickest in one period, and a coupling barrier layer has a layer thickness smaller than that of an exit barrier layer thickest in one period. The unit laminate structure has a detection lower level arising from a ground level in the first well layer, a detection upper level generated by coupling an excitation level in the first well layer and a ground level in the second well layer, and a transport level structure for electrons.
Abstract translation: 量子级联检测器包括半导体衬底和通过层叠单元层压结构形成的有源层，每个层叠结构具有带有第一阻挡层的吸收区域到第二阱层以及具有第三阻挡层到第n阱层的传输区域 。 第二吸收阱层具有在一个周期中最厚的第一吸收阱层的层厚度的1/2或更小，并且耦合阻挡层的层厚度小于在一个周期中最厚的出口阻挡层的层厚度。 单元层叠结构具有从第一阱层的地电平产生的检测下位电平，通过耦合第一阱层中的激发电平而产生的检测上限电平和第二阱层中的接地电平，以及传输电平结构 对于电子。
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13.发明授权公开(公告)号：US12119613B2
公开(公告)日：2024-10-15
申请号：US16985916
申请日：2020-08-05
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi Sugiyama , Akio Ito , Tadataka Edamura
CPC classification number: H01S5/0287 , G02B1/113 , H01S5/166 , H01S5/3402 , H01S5/12 , H01S5/22
Abstract: A sintered body of the present invention includes cerium oxide and cerium fluoride or yttrium fluoride.
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公开(公告)号：USD960008S1
公开(公告)日：2022-08-09
申请号：US29750114
申请日：2020-09-11
Applicant: HAMAMATSU PHOTONICS K.K.
Designer： Tatsuo Dougakiuchi , Akio Ito , Masahiro Hitaka , Tadataka Edamura
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公开(公告)号：US10591413B2
公开(公告)日：2020-03-17
申请号：US16021055
申请日：2018-06-28
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tatsuo Dougakiuchi , Akio Ito , Kazuue Fujita , Tadataka Edamura
IPC: G01J3/30 , G01N21/39 , H01S5/343 , H01S5/10 , H01S5/20 , H01S5/026 , H01S5/00 , H01L31/0352 , H01S5/34 , H01S5/22 , H01S5/02 , G01N21/45 , H01S5/14 , H01S5/12 , H01S5/065
Abstract: A fluid analyzer includes a substrate, a quantum cascade laser formed on a surface of the substrate and including a first light-emitting surface and a second light-emitting surface facing each other in a predetermined direction parallel to the surface, a quantum cascade detector formed on the surface and including the same layer structure as the quantum cascade laser and a light incident surface facing the second light-emitting surface in the predetermined direction, and an optical element disposed on an optical path of light emitted from the first light-emitting surface across an inspection region in which a fluid to be analyzed is to be disposed and reflecting the light to feed the light back to the first light-emitting surface.
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Patent Agency Ranking
公开(公告)号：US10333279B2
公开(公告)日：2019-06-25
申请号：US14923861
申请日：2015-10-27
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Takahide Ochiai , Tadataka Edamura , Naota Akikusa
Abstract: A quantum cascade laser device has a light-absorbing cover member located between one emission end face of a quantum cascade laser element and an emission window of a housing. The emission end face and an opposing surface of a submount with respect to the cover member are flush with each other. The cover member has an opening at a position opposing the emission end face. The opening has a tapered first opening part increasing its diameter from the emission end face side to the emission window side and a second opening part formed with a fixed diameter not smaller than the smallest diameter of the first opening part.
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公开(公告)号：US10014662B2
公开(公告)日：2018-07-03
申请号：US15193249
申请日：2016-06-27
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Kazuue Fujita , Akio Ito , Tadataka Edamura , Tatsuo Dougakiuchi
CPC classification number: H01S5/2018 , H01S5/0604 , H01S5/1096 , H01S5/18 , H01S5/24 , H01S5/3402 , H01S5/34306 , H01S2302/02
Abstract: A quantum cascade laser is configured with a semiconductor substrate, and an active layer provided on a first surface of the substrate and having a cascade structure in the form of a multistage lamination of unit laminate structures each of which includes an emission layer and an injection layer. The active layer is configured to be capable of generating first pump light of a frequency ω1 and second pump light of a frequency ω2 by intersubband emission transitions of electrons, and to generate output light of a difference frequency ω by difference frequency generation from the first pump light and the second pump light. Grooves respectively formed in a direction intersecting with a resonating direction in a laser cavity structure are provided on a second surface opposite to the first surface of the substrate.
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公开(公告)号：US10008829B2
公开(公告)日：2018-06-26
申请号：US15251119
申请日：2016-08-30
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Tatsuo Dougakiuchi , Kazuue Fujita , Akio Ito , Tadataka Edamura
CPC classification number: H01S5/3402 , H01S5/0207 , H01S5/0267 , H01S5/0604 , H01S5/1028 , H01S5/1096 , H01S5/1221 , H01S5/124 , H01S5/141 , H01S5/18 , H01S5/2018 , H01S2302/02
Abstract: A quantum cascade laser is configured with a semiconductor substrate, and an active layer provided on a first surface of the substrate and having a multistage lamination of unit laminate structures each of which includes an emission layer and an injection layer. The active layer is configured to be capable of generating first pump light of a frequency ω1 and second pump light of a frequency ω2, and to generate output light of a difference frequency ω by difference frequency generation. An external diffraction grating is provided constituting an external cavity for generating the first pump light and configured to be capable of changing the frequency ω1, outside an element structure portion including the active layer. Grooves respectively formed in a direction intersecting with a resonating direction are provided on a second surface of the substrate.
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公开(公告)号：US09246309B2
公开(公告)日：2016-01-26
申请号：US13909611
申请日：2013-06-04
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Atsushi Sugiyama , Naota Akikusa , Tadataka Edamura
CPC classification number: H01S5/3401 , B82Y20/00 , H01S5/0071 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/12 , H01S5/141 , H01S5/3402
Abstract: A quantum cascade laser includes a semiconductor substrate, and an active layer that is provided on the substrate, and has a cascade structure in which emission layers and injection layers are alternately laminated by multistage-laminating unit laminate structures each consisting of the quantum well emission layer and the injection layer, the active layer generates light by intersubband transition in a quantum well structure. Further, in a laser cavity structure for light with a predetermined wavelength to be generated in the active layer, reflection control films including at least one layer of CeO2 film are formed on a first end face and a second end face facing each other. Thereby, it is possible to realize a quantum cascade laser capable of preferably realizing reflectance control for light within a mid-infrared wavelength region on the laser device end face.
Abstract translation: 量子级联激光器包括半导体衬底和设置在衬底上的有源层，并且具有级联结构，其中发射层和注入层通过多级层压单元层叠结构交替层叠，每个层叠结构由量子阱发射层 和注入层，有源层通过量子阱结构中的子带间跃迁产生光。 此外，在有源层中产生具有预定波长的光的激光腔结构中，在彼此相对的第一端面和第二端面上形成包括至少一层CeO 2膜的反射控制膜。 由此，能够实现能够优选实现激光装置端面的中红外波长区域内的光的反射率控制的量子级联激光器。
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公开(公告)号：US11075315B2
公开(公告)日：2021-07-27
申请号：US16386604
申请日：2019-04-17
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Masahiro Hitaka , Akio Ito , Tatsuo Dougakiuchi , Kazuue Fujita , Tadataka Edamura
IPC: H01L31/18 , H01L31/173 , H01S5/34 , H01L31/0352 , H01L31/0224 , H01S5/02 , H01S5/22 , H01S5/042 , H01S5/343 , H01L31/0304 , G01N21/25 , H01S5/026
Abstract: An optical semiconductor element includes a semiconductor substrate, a first laminated structure provided on a front surface of the semiconductor substrate, and a second laminated structure provided on the front surface of the semiconductor substrate, the first laminated structure includes a first quantum cascade region, the second laminated structure includes a dummy region having the same layer structure as the first quantum cascade region, a second quantum cascade region provided on the front surface of the semiconductor substrate via the dummy region, and one of the first quantum cascade region and the second quantum cascade region is a quantum cascade laser, and the other of the first quantum cascade region and the second quantum cascade region is a quantum cascade detector.
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