公开(公告)号：US12046875B2

公开(公告)日：2024-07-23

申请号：US17313389

申请日：2021-05-06

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuue Fujita ,  Masahiro Hitaka ,  Atsushi Sugiyama ,  Kousuke Shibata

IPC: H01S5/34 ,  H01S5/042 ,  H01S5/06 ,  H01S5/30 ,  H01S5/028 ,  H01S5/12 ,  H01S5/22

CPC classification number: H01S5/3401 ,  H01S5/0425 ,  H01S5/0604 ,  H01S5/3086 ,  H01S5/3402 ,  H01S5/0287 ,  H01S5/04257 ,  H01S5/12 ,  H01S5/22 ,  H01S2302/02

Abstract: A quantum cascade laser device includes a semiconductor substrate, an active layer provided on the semiconductor substrate, and an upper clad layer provided on a side of the active layer opposite to the semiconductor substrate side and having a doping concentration of impurities of less than 1×1017 cm−3. Unit laminates included in the active layer each include a first emission upper level, a second emission upper level, and at least one emission lower level in their subband level structure. The active layer is configured to generate light having a center wavelength of 10 μm or more due to electron transition between at least two levels of the first emission upper level, the second emission upper level, and the at least one emission lower level in the light emission layer in each of the unit laminates.

公开(公告)号：USD960008S1

公开(公告)日：2022-08-09

申请号：US29750114

申请日：2020-09-11

Applicant: HAMAMATSU PHOTONICS K.K.

Designer： Tatsuo Dougakiuchi ,  Akio Ito ,  Masahiro Hitaka ,  Tadataka Edamura

公开(公告)号：US09859683B2

公开(公告)日：2018-01-02

申请号：US15397868

申请日：2017-01-04

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Masahiro Hitaka ,  Yutaka Takagi ,  Takahiro Sugiyama

IPC: H01S5/00 ,  H01S5/12 ,  H01S5/34 ,  H01S5/20 ,  H01S5/068 ,  H01S5/343

CPC classification number: H01S5/12 ,  H01S5/06804 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/34 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34313 ,  H01S5/34353

Abstract: A DFB laser element includes an active layer 4 having a multiple quantum well structure including a plurality of well layers 4B having different thicknesses, a diffraction grating layer 6 that is optically coupled to the active layer 4, and a pair of cladding layers with the active layer 4 and the diffraction grating layer 6 interposed therebetween. An effective refractive index of the diffraction grating layer 6 is high, and a thickness of the well layer 4B increases as a distance from the diffraction grating layer 6 increases. In this structure, it is possible to reduce dependence on temperature when the DFB semiconductor laser element is miniaturized.

公开(公告)号：US12244121B2

公开(公告)日：2025-03-04

申请号：US17214084

申请日：2021-03-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuue Fujita ,  Masahiro Hitaka

IPC: H01S5/34 ,  H01S5/06 ,  H01S5/10 ,  H01S5/12 ,  H01S5/02 ,  H01S5/042 ,  H01S5/227

Abstract: A QCL includes a semiconductor substrate and an active layer provided on the semiconductor substrate. The active layer has a cascade structure in which a unit laminate including a light emission layer which generates light and an injection layer to which electrons are transported from the light emission layer is laminated in multiple stages. The light emission layer and the injection layer each have a quantum well structure in which quantum well layers and barrier layers are alternately laminated. A separation layer including a separation quantum well layer having a layer thickness smaller than an average layer thickness of the quantum well layers included in the light emission layer and smaller than an average layer thickness of the quantum well layers included in the injection layer is provided between the light emission layer and the injection layer in the unit laminate.

公开(公告)号：USD960006S1

公开(公告)日：2022-08-09

申请号：US29749733

申请日：2020-09-09

Applicant: HAMAMATSU PHOTONICS K.K.

Designer： Tatsuo Dougakiuchi ,  Akio Ito ,  Masahiro Hitaka ,  Tadataka Edamura

公开(公告)号：USD892656S1

公开(公告)日：2020-08-11

申请号：US29684293

申请日：2019-03-20

Applicant: HAMAMATSU PHOTONICS K.K.

Designer： Tatsuo Dougakiuchi ,  Akio Ito ,  Masahiro Hitaka ,  Tadataka Edamura

公开(公告)号：US12119612B2

公开(公告)日：2024-10-15

申请号：US17414070

申请日：2019-12-11

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akio Ito ,  Yoshitaka Kurosaka ,  Masahiro Hitaka ,  Kazuyoshi Hirose ,  Tadataka Edamura

IPC: H01S3/10 ,  H01S5/0236 ,  H01S5/026 ,  H01S5/042 ,  H01S5/11 ,  H01S5/343 ,  G06F30/10

CPC classification number: H01S5/026 ,  H01S5/0236 ,  H01S5/04254 ,  H01S5/04256 ,  H01S5/11 ,  H01S5/34333 ,  G06F30/10 ,  H01S5/3436

Abstract: The light-emitting element of an embodiment outputs a clear optical image while suppressing light output efficiency reduction, and includes a substrate, a light-emitting unit, and a bonding layer. The light-emitting unit has a semiconductor stack, including a phase modulation layer, between first and second electrodes. The phase modulation layer has a base layer and modified refractive index regions, and includes a first region having a size including the second electrode, and a second region. Each gravity center of the second region's modified refractive index region is arranged by an array condition. The light from the stack is a single beam, and regarding a first distance from the substrate to the stack's front surface and a second distance from the substrate to the stack's back surface, a variation amount of the first distance along a direction on the substrate is smaller than a variation amount of the second distance.

公开(公告)号：USD960009S1

公开(公告)日：2022-08-09

申请号：US29750378

申请日：2020-09-14

Applicant: HAMAMATSU PHOTONICS K.K.

Designer： Tatsuo Dougakiuchi ,  Akio Ito ,  Masahiro Hitaka ,  Tadataka Edamura

公开(公告)号：USD960007S1

公开(公告)日：2022-08-09

申请号：US29749999

申请日：2020-09-10

Applicant: HAMAMATSU PHOTONICS K.K.

Designer： Tatsuo Dougakiuchi ,  Akio Ito ,  Masahiro Hitaka ,  Tadataka Edamura

公开(公告)号：USD892657S1

公开(公告)日：2020-08-11

申请号：US29684297

申请日：2019-03-20

Applicant: HAMAMATSU PHOTONICS K.K.

Designer： Tatsuo Dougakiuchi ,  Akio Ito ,  Masahiro Hitaka ,  Tadataka Edamura