TRANSMISSION TYPE PHOTOELECTRIC SURFACE, MANUFACTURE THEREOF AND PHOTOELECTRIC TRANSFER TUBE USING THE TRANSMISSION TYPE PHOTOELECTRIC SURFACE

    公开(公告)号:JPH09213206A

    公开(公告)日:1997-08-15

    申请号:JP2012396

    申请日:1996-02-06

    Abstract: PROBLEM TO BE SOLVED: To provide a transmission type photoelectric surface coexisting photoelectric sensitivity and time response characteristics and having simple configuration and manufacture thereof. SOLUTION: An active layer 32 consisting of GaAs is thinly formed rather than conventional active layers on one surface of a window layer 31. An electrode consisting of Cr and a very thin surface layer 33 consisting of Cs2 O are formed on the upper surface of the active layer 32 at the extreme end part and the central part. Many fine recessed and projecting parts are formed by regularly arranging generally semisphere recessed parts on the other surface of the window layer 31. A glass face plate 10 is closely interposed through an antireflection film 20 on the fine recessed and projecting parts. A light diffusion surface for diffusion light to be detected in the window layer direction is formed at the interfaces of the glass face plate 10, the window layer 31, and the antireflection film 20. This simple configuration sufficiently absorbs the light to be detected entered from the glass face plate 10 and diffused on the light diffusion surface in the thin active layer 32 to release a photoelectron to an outer part in a short period of time.

    MANUFACTURE OF ELECTRONIC TUBE
    12.
    发明专利

    公开(公告)号:JPH09106764A

    公开(公告)日:1997-04-22

    申请号:JP26320895

    申请日:1995-10-11

    Abstract: PROBLEM TO BE SOLVED: To realize excellent vacuum, decrease residual gas in an electron tube, and significantly reduce noise caused by remaining gas. SOLUTION: In a vacuum atmosphere, an incident window 1 having a photoelectric face 2, an indium ring 22 to which a SUS ring 22 is concentrically fitted outside, a side tube 6 holding the photoelectric face 2 in vacuum are coaxially disposed successively. The incident window 1 and side tube 6 are relatively made closer so as to block the opening end of the side tube by the incident window 1, and to push deform the indium ring 2 to vacuum seal an electron tube. The indium ring 20 is made thinner toward the center side and is formed tapered in a cross section, and a slit 21 which can communicate the outside and the inside of the electron tube until just before sealing completion is formed in the indium ring 20 so that gas inside the tube is exhausted from the slit 21.

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