公开(公告)号：DE69935931T2

公开(公告)日：2008-01-10

申请号：DE69935931

申请日：1999-12-02

Applicant: HAMAMATSU PHOTONICS KK

Inventor： AKAHORI HIROSHI ,  SUZUKI HISANORI ,  MIYAGUCHI KAZUHISA ,  MURAMATSU MASAHARU ,  YAMAMOTO KOEI

IPC: G01T1/24 ,  H01L27/148 ,  H01L29/768 ,  H01L31/00 ,  H04N3/14

Abstract: A semiconductor energy detector as disclosed herein is arranged so that an aluminum wiring pattern is formed on the top surface side of transfer electrodes of a CCD vertical shift register, which pattern includes meander-shaped or serpentine auxiliary writing wirings 101-103 for performing auxiliary application/supplement and additional wirings 111, 112, 122, 123 for performing auxiliary supplement of transfer voltages in a way independent of the auxiliary wirings with respective ones of such wirings being connected to corresponding transfer electrodes to thereby avoid a problem as to lead resistivities at those transfer electrodes made of polycrystalline silicon, thus achieving the intended charge transfer at high speeds with high efficiency.

公开(公告)号：DE69935931D1

公开(公告)日：2007-06-06

申请号：DE69935931

申请日：1999-12-02

Applicant: HAMAMATSU PHOTONICS KK

Inventor： AKAHORI HIROSHI ,  SUZUKI HISANORI ,  MIYAGUCHI KAZUHISA ,  MURAMATSU MASAHARU ,  YAMAMOTO KOEI

IPC: G01T1/24 ,  H01L27/148 ,  H01L29/768 ,  H01L31/00 ,  H04N3/14

Abstract: A semiconductor energy detector as disclosed herein is arranged so that an aluminum wiring pattern is formed on the top surface side of transfer electrodes of a CCD vertical shift register, which pattern includes meander-shaped or serpentine auxiliary writing wirings 101-103 for performing auxiliary application/supplement and additional wirings 111, 112, 122, 123 for performing auxiliary supplement of transfer voltages in a way independent of the auxiliary wirings with respective ones of such wirings being connected to corresponding transfer electrodes to thereby avoid a problem as to lead resistivities at those transfer electrodes made of polycrystalline silicon, thus achieving the intended charge transfer at high speeds with high efficiency.

公开(公告)号：DE69737492D1

公开(公告)日：2007-05-03

申请号：DE69737492

申请日：1997-10-10

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MURAMATSU MASAHARU ,  AKAHORI HIROSHI

IPC: H01L27/148 ,  H01L21/82 ,  H01L27/14 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/112

公开(公告)号：DE69525311T2

公开(公告)日：2003-02-13

申请号：DE69525311

申请日：1995-11-14

Applicant: HAMAMATSU PHOTONICS KK

Inventor： SUYAMA MOTOHIRO ,  MURAMATSU MASAHARU ,  OISHI MAKOTO ,  ISHIKAWA YOSHITAKA ,  YAMAMOTO KOEI

IPC: H01J43/04 ,  H01J43/12 ,  H01L31/107 ,  H01J43/10 ,  H01J1/32

Abstract: In a photomultiplier of the present invention, a semiconductor device (60) arranged in an envelope (20) to oppose a photocathode (40) is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by epitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer. When the dopant concentration distribution in the carrier multiplication layer is uniformly controlled on the basis of epitaxial growth, the uniformity of an avalanche multiplication gain for photoelectrons incident at different positions on the receptor of the semiconductor device is improved, thereby largely increasing the energy resolving power.

公开(公告)号：AU3837200A

公开(公告)日：2000-11-14

申请号：AU3837200

申请日：2000-04-13

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MURAMATSU MASAHARU

IPC: H01L27/148 ,  H01L27/146 ,  H01L31/0352 ,  G01J1/02 ,  G01J3/36

Abstract: A CCD unit is provided on the surface 11b side of a thin shape section that is formed on a first substrate. In the CCD unit, first cells are provided and disposed in the form of an array in a direction in which the thin shape section extends. An InGaAs photodiode unit is provided at a second substrate 21: in the InGaAs photodiode unit, second cells are provided and disposed in an array in the same direction as the first cells while having equal pitches to the first cells. The first substrate and second substrate are stacked over each other in such a manner that the surface of the first substrate and a second incidence plane of the second substrate oppose each other to ensure that part of a first photoelectric conversion region of the CCD unit correspondingly overlap part of a second photoelectric conversion region of the InGaAs photodiode unit 22 when seen in plan view.

公开(公告)号：DE69737492T2

公开(公告)日：2007-11-29

申请号：DE69737492

申请日：1997-10-10

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MURAMATSU MASAHARU ,  AKAHORI HIROSHI

IPC: H01L27/148 ,  H01L21/82 ,  H01L27/14 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/112

公开(公告)号：DE69825674T2

公开(公告)日：2005-08-11

申请号：DE69825674

申请日：1998-06-05

Applicant: HAMAMATSU PHOTONICS KK

Inventor： AKAHORI HIROSHI ,  MURAMATSU MASAHARU

IPC: H01L27/14 ,  H01L27/148 ,  H01L31/02

Abstract: An n-type buried channel (3), a silicon oxide film (4), a poly-Si transfer electrode (5), a PSG film (6) as an insulating interlayer, an aluminum interconnection (7), and a silicon nitride film (8) are stacked on one surface of a p-type silicon substrate (1) to form a CCD (2). The other surface is protected by a silicon oxide film (9), and a p -type accumulation layer (10) is formed on the silicon oxide film, thereby forming a back-illuminated CCD on which light, electromagnetic wave, charged particles, or the like is incident through the other surface. A glass substrate (13) is anodically bonded on the CCD via an insulating polyimide film (11), and a conductive aluminum (12) film. Therefore, the mechanical strength of the device is kept high, and the sensitivity can be increased by thinning the silicon substrate.

公开(公告)号：AU2003272949A1

公开(公告)日：2004-05-04

申请号：AU2003272949

申请日：2003-10-08

Applicant: HAMAMATSU PHOTONICS KK

Inventor： KOBAYASHI HIROYA ,  MURAMATSU MASAHARU

IPC: G01J1/02 ,  F25B21/02 ,  F25D19/00 ,  H01L27/14 ,  H01L27/146 ,  H01L27/148 ,  H01L31/024 ,  G01J3/36 ,  H01L31/02 ,  F25D11/00

Abstract: This invention relates to a photodetection device, etc., equipped with a structure that efficiently cools a CCD reading part and can realize a downsizing of the entire device. The photodetection device comprises: a semiconductor substrate having a back surface which serves as a light-incident surface, and a front surface which opposes the back surface and is provided with a CCD reading part that detects light propagating from the back surface; a cooling device cooling the CCD reading part; and a package having a cavity that houses the semiconductor substrate and cooling device. The semiconductor substrate is fixed to a cavity bottom part of the package via the cooling device, and at the back surface thereof, a portion corresponding to a region at which the CCD reading part is disposed, is made thin. The cooling device has a cooling surface contacting the front surface of the semiconductor substrate while covering the region at which the CCD reading part is disposed. The size of the cooling surface is larger than the region at which the CCD reading part is disposed and yet smaller than the front surface of the semiconductor substrate. Also, electrode pads, disposed on the front surface of the semiconductor substrate and positioned at the peripheral of the region covered by the cooling surface of the cooling device, and package terminals provided on the package are electrically connected via bonding wires.

公开(公告)号：AU2003272948A1

公开(公告)日：2004-05-04

申请号：AU2003272948

申请日：2003-10-08

Applicant: HAMAMATSU PHOTONICS KK

Inventor： KOBAYASHI HIROYA ,  MURAMATSU MASAHARU

IPC: G01T1/20 ,  H01J37/22 ,  H01J37/244 ,  H01J37/26 ,  H01L27/14 ,  H01L27/148 ,  H04N5/225 ,  H04N5/335 ,  H04N5/372

公开(公告)号：DE69525311D1

公开(公告)日：2002-03-21

申请号：DE69525311

申请日：1995-11-14

Applicant: HAMAMATSU PHOTONICS KK

Inventor： SUYAMA MOTOHIRO ,  MURAMATSU MASAHARU ,  OISHI MAKOTO ,  ISHIKAWA YOSHITAKA ,  YAMAMOTO KOEI

IPC: H01J43/04 ,  H01J43/12 ,  H01L31/107 ,  H01J43/10 ,  H01J1/32

Abstract: In a photomultiplier of the present invention, a semiconductor device (60) arranged in an envelope (20) to oppose a photocathode (40) is constituted by a semiconductor substrate of a first conductivity type, a carrier multiplication layer of a second conductivity type different from the first conductivity type, which is formed on the semiconductor substrate by epitaxial growth, a breakdown voltage control layer of the second conductivity type, which is formed on the carrier multiplication layer and has a dopant concentration higher than that of the carrier multiplication layer, a first insulating layer formed on the breakdown voltage control layer and said carrier multiplication layer while partially exposing the surface of the breakdown voltage control layer as a receptor for photoelectrons and consisting of a nitride, and an ohmic electrode layer formed on a peripheral surface portion of the receptor of the breakdown voltage control layer. When the dopant concentration distribution in the carrier multiplication layer is uniformly controlled on the basis of epitaxial growth, the uniformity of an avalanche multiplication gain for photoelectrons incident at different positions on the receptor of the semiconductor device is improved, thereby largely increasing the energy resolving power.