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195 records (took 0.025 seconds)

    1.
    发明专利
    未知

    公开(公告)号：AT557422T

    公开(公告)日：2012-05-15

    申请号：AT10735832

    申请日：2010-01-27

    Applicant: HAMAMATSU PHOTONICS KK

    Inventor： SUZUKI HISANORI ,  YONETA YASUHITO ,  TAKAGI SHIN-ICHIRO ,  MAETA KENTARO ,  MURAMATSU MASAHARU

    IPC: H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372

    Abstract: In a solid state imaging device with an electron multiplying function, in a section normal to an electron transfer direction of a multiplication register EM, an insulating layer 2 is thicker at both side portions than in a central region. A pair of overflow drains 1N is formed at a boundary between a central region and both side portions of an N-type semiconductor region 1C. Each overflow drain 1N extends along the electron transfer direction of the multiplication register EM. Overflow gate electrodes G extend from the thin portion to the thick portion of the insulating layer 2. The overflow gate electrodes G are disposed between both ends of each transfer electrode 8 in a longitudinal direction and the insulating layer 2, and they also function as shield electrodes for each electrode 8 (8A and 8B).

    2.
    发明专利
    未知

    公开(公告)号：DE60035580D1

    公开(公告)日：2007-08-30

    申请号：DE60035580

    申请日：2000-04-13

    Applicant: HAMAMATSU PHOTONICS KK

    Inventor： MURAMATSU MASAHARU

    IPC: H01L27/146 ,  H01L27/148

    Abstract: A CCD unit is provided on the surface 11b side of a thin shape section that is formed on a first substrate. In the CCD unit, first cells are provided and disposed in the form of an array in a direction in which the thin shape section extends. An InGaAs photodiode unit is provided at a second substrate 21: in the InGaAs photodiode unit, second cells are provided and disposed in an array in the same direction as the first cells while having equal pitches to the first cells. The first substrate and second substrate are stacked over each other in such a manner that the surface of the first substrate and a second incidence plane of the second substrate oppose each other to ensure that part of a first photoelectric conversion region of the CCD unit correspondingly overlap part of a second photoelectric conversion region of the InGaAs photodiode unit 22 when seen in plan view.

    5.
    发明专利
    未知

    公开(公告)号：DE60035580T2

    公开(公告)日：2008-04-17

    申请号：DE60035580

    申请日：2000-04-13

    Applicant: HAMAMATSU PHOTONICS KK

    Inventor： MURAMATSU MASAHARU

    IPC: H01L27/146 ,  H01L27/148

    Abstract: A CCD unit is provided on the surface 11b side of a thin shape section that is formed on a first substrate. In the CCD unit, first cells are provided and disposed in the form of an array in a direction in which the thin shape section extends. An InGaAs photodiode unit is provided at a second substrate 21: in the InGaAs photodiode unit, second cells are provided and disposed in an array in the same direction as the first cells while having equal pitches to the first cells. The first substrate and second substrate are stacked over each other in such a manner that the surface of the first substrate and a second incidence plane of the second substrate oppose each other to ensure that part of a first photoelectric conversion region of the CCD unit correspondingly overlap part of a second photoelectric conversion region of the InGaAs photodiode unit 22 when seen in plan view.

    RÜCKSEITIG BELEUCHTETER SENSOR UND VERFAHREN ZUR HERSTELLUNG EINES SENSORS
    8.
    发明专利
    RÜCKSEITIG BELEUCHTETER SENSOR UND VERFAHREN ZUR HERSTELLUNG EINES SENSORS 未知

    公开(公告)号：DE112019003064T5

    公开(公告)日：2021-03-04

    申请号：DE112019003064

    申请日：2019-06-17

    Applicant: HAMAMATSU PHOTONICS KK ,  KLA CORP

    Inventor： CHUANG YUNG-HO ALEX ,  ZHANG JINGJING ,  FIELDEN JOHN ,  BROWN DAVID L ,  MURAMATSU MASAHARU ,  YONETA YASUHITO ,  OTSUKA SHINYA

    IPC: H01L27/146 ,  H01J40/06

    Abstract: Ein Bildsensor für Elektronen oder kurzwelliges Licht umfasst eine Halbleitermembran, auf einer Oberfläche der Halbleitermembran gebildete Schaltungselemente und eine reine Borschicht auf der anderen Oberfläche der Halbleitermembran. Die Schaltungselemente sind durch Metallverbindungen verbunden, die ein Refraktärmetall umfassen. Auf der reinen Borschicht kann eine Antireflexions- oder Schutzschicht gebildet sein. Dieser Bildsensor hat eine hohe Effizienz und eine gute Stabilität, selbst bei mehrjährigem Dauereinsatz bei hohem Fluss. Der Bildsensor kann unter Verwendung der CCD-Technologie (Charge Coupled Device) oder der CMOS-Technologie (Complementary Metal Oxide Semiconductor) hergestellt werden. Der Bildsensor kann ein zweidimensionaler Flächensensor oder ein eindimensionaler Array-Sensor sein.

    10.
    发明专利
    未知

    公开(公告)号：DE602004015764D1

    公开(公告)日：2008-09-25

    申请号：DE602004015764

    申请日：2004-04-14

    Applicant: HAMAMATSU PHOTONICS KK

    Inventor： KOBAYASHI HIROYA ,  AKAHORI HIROSHI ,  MURAMATSU MASAHARU

    IPC: H01L27/14 ,  H01L23/04 ,  H01L27/146 ,  H01L27/148 ,  H04N5/335

    Abstract: A CCD portion 3 is formed on a front surface side of a semiconductor substrate 1. A region of a back surface side of semiconductor substrate 1 that corresponds to CCD portion 3 is thinned while leaving peripheral regions 1a of the region, and an accumulation layer 5 is formed on the back surface side of semiconductor substrate 1. An electrical wiring 7, which is electrically connected to CCD portion 3, and an electrode pad 9, which is electrically connected to electrical wiring 7, are then formed on a region 1b of the front surface side of semiconductor substrate 1 that corresponds to a peripheral region 1a, and a supporting substrate 11 is adhered onto the front surface side of semiconductor substrate 1 so as to cover CCD portion 3 while leaving electrode pad 9 exposed. Semiconductor substrate 1 and supporting substrate 11 are then cut at a thinned portion of semiconductor substrate 1 so as to leave peripheral region 1a corresponding to region 1b at which electrical wiring 7 and electrode pad 9 are formed.

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