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公开(公告)号：DE69633152D1
公开(公告)日：2004-09-23
申请号：DE69633152
申请日：1996-02-27
Applicant: HAMAMATSU PHOTONICS KK
Inventor： NIIGAKI MINORU , HIROHATA TORU , YAMADA MASAMI , KINOSHITA KATSUYUKI
Abstract: The present invention is to provide a method of using a photocathode including a laminated heterostructure of Group III - V semiconductors, which is ccnstituted by a p-type light-absorbing layer formed on a p-type substrate and a p-type electron-emitting layer formed on the light-absorbing layer, a first electrode formed to have a rectifying function with respect to the electron-emitting layer, and a second electrode formed in ohmic contact with the substrate, wherein a voltage necessary and sufficient to form a potential gradient throughout the light-absorbing layer is applied between the first electrode and the second electrode, thereby accelerating photoelectrons excited in the light-absorbing layer which absorbs external incident light on the basis of an electric field formed in the light-absorbing layer and the electron-emitting layer and emitting the photoelectrons from the electron-emitting layer. The accelerated electrons largely decrease differences in transit time until reaching the emission surface of the electron-emitting layer as compared to diffused electrons. Therefore, the response speed of the photocathode for detecting external incident light is increased.
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公开(公告)号：DE69527261D1
公开(公告)日：2002-08-08
申请号：DE69527261
申请日：1995-12-19
Applicant: HAMAMATSU PHOTONICS KK
Inventor： NIIGAKI MINORU , HIROHATA TORU , SUZUKI TOMOKO , YAMADA MASAMI
Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode (15) and a lower surface electrode (17) by a battery (18). Upon application of this voltage, a p-n junction formed between a contact layer (14) and an electron emission layer (13) is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer (12) in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer into excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transited, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.
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公开(公告)号：DE69527261T2
公开(公告)日：2002-11-21
申请号：DE69527261
申请日：1995-12-19
Applicant: HAMAMATSU PHOTONICS KK
Inventor： NIIGAKI MINORU , HIROHATA TORU , SUZUKI TOMOKO , YAMADA MASAMI
Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode (15) and a lower surface electrode (17) by a battery (18). Upon application of this voltage, a p-n junction formed between a contact layer (14) and an electron emission layer (13) is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer (12) in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer into excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transited, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.
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公开(公告)号：DE69405458T2
公开(公告)日：1998-01-29
申请号：DE69405458
申请日：1994-06-02
Applicant: HAMAMATSU PHOTONICS KK
Inventor： NIIGAKI MINORU , KINOSHITA KATSUYUKI , HIROHATA TORU , IHARA TUNEO , YAMADA MASAMI , ASAKURA NORIO , NEGI YASUHARU , SUZUKI TOMOKO
Abstract: There is disclosed a photocathode comprising: a photoelectric conversion layer for internally exciting photoelectrons in response to incident photons; a semiconductor layer having a photoelectron emission surface for emitting the photoelectrons generated and accelerated in the photoelectric conversion layer from the photoelectron emission surface; an upper surface electrode formed on the photoelectron emission surface of the semiconductor layer; and a lower surface electrode formed on the semiconductor layer so that the lower surface electrode is opposite to the upper surface electrode through the semiconductor layer, the upper surface electrode being divided so as to provide a plurality of pixel electrodes which are electrically insulated from each other, the plurality of pixel electrodes being respectively connected to a plurarity of bias application wires.
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公开(公告)号：DE69405458D1
公开(公告)日：1997-10-16
申请号：DE69405458
申请日：1994-06-02
Applicant: HAMAMATSU PHOTONICS KK
Inventor： NIIGAKI MINORU , KINOSHITA KATSUYUKI , HIROHATA TORU , IHARA TUNEO , YAMADA MASAMI , ASAKURA NORIO , NEGI YASUHARU , SUZUKI TOMOKO
Abstract: There is disclosed a photocathode comprising: a photoelectric conversion layer for internally exciting photoelectrons in response to incident photons; a semiconductor layer having a photoelectron emission surface for emitting the photoelectrons generated and accelerated in the photoelectric conversion layer from the photoelectron emission surface; an upper surface electrode formed on the photoelectron emission surface of the semiconductor layer; and a lower surface electrode formed on the semiconductor layer so that the lower surface electrode is opposite to the upper surface electrode through the semiconductor layer, the upper surface electrode being divided so as to provide a plurality of pixel electrodes which are electrically insulated from each other, the plurality of pixel electrodes being respectively connected to a plurarity of bias application wires.
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Patent Agency Ranking
公开(公告)号：JPH0778554A
公开(公告)日：1995-03-20
申请号：JP22623793
申请日：1993-09-10
Applicant: HAMAMATSU PHOTONICS KK
Inventor： ARAGAKI MINORU , HIROHATA TORU , IHARA TSUNEO , YAMADA MASAMI
Abstract: PURPOSE:To provide a photoelectron emission surface having excellent photoelectric transfer quantum efficiency, a high-sensitivity electron tube having photoelectron multiplication function, and a high-sensitivity light detection device. CONSTITUTION:A photoelectron emission surface comprises a light absorbing layer 2 of a P-type, or having semi-insulation property, or having a hetero- lamination structure to absorb incidental light and excite photoelectrons, having a Schottky electrode 5, an insulation layer 6, and an extraction electrode 7 laminated on the light absorbing layer 2, and a contact 3 provided to apply a voltage of a specified polarity between the light absorbing layer 2 and the Schottky electrode 5. A specified bias voltage is applied between the light absorbing layer 2 and the Schottky electrode 5, and between the Schottky electrode 5 and the extraction electrode 7 respectively to emit photoelectrons in accordance with light incidence to the light absorbing layer 2. An electron tube is composed including the photoelectron emission surface of this structure to multiply emitted photoelectrons, and this electron tube is applied to a light detection part to realize a high sensitivity light detection device.
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公开(公告)号：JP2009295503A
公开(公告)日：2009-12-17
申请号：JP2008149586
申请日：2008-06-06
Applicant: Hamamatsu Photonics Kk , 浜松ホトニクス株式会社
Inventor： NEGI YASUHARU , MURAMATSU SHINICHI , YAMADA MASAMI , YAMAGUCHI AKIHIKO , GENMA TAKESHI
Abstract: PROBLEM TO BE SOLVED: To provide an alkali metal generating source capable of stably heating an alkali metal member. SOLUTION: In this alkali metal generating source 1, a pellet 16 containing a raw material to generate alkali metal steam is housed in a case 20 composed of a first case part 28 and a second case part 30. In addition to the pellet 16, a ceramic substrate 18 on the back side 18b or in the inside of which a resistance heating part 21 is provided is housed in the case 20, and a current carrying pin 24 is electrically connected to the resistance heating part 21. The ceramic substrate 18 is housed in the case 20 so as to be held between the first case part 28 and the second case part 30, and the pellet 16 is disposed on the surface 18a side of the ceramic substrate 18. COPYRIGHT: (C)2010,JPO&INPIT
Abstract translation: 要解决的问题：提供能够稳定加热碱金属构件的碱金属发生源。 解决方案：在这种碱金属发生源1中，将含有产生碱金属蒸汽的原料的颗粒16容纳在由第一壳体部分28和第二壳体部分30组成的壳体20中。除了颗粒 如图16所示，在背面18b的陶瓷基板18或设置有电阻加热部21的陶瓷基板18容纳在壳体20内，并且电流承载销24与电阻加热部21电连接。陶瓷基板 18被容纳在壳体20中，以便保持在第一壳体部分28和第二壳体部分30之间，并且颗粒16设置在陶瓷基板18的表面18a侧上。（C） 2010年，JPO＆INPIT
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公开(公告)号：JPH10149761A
公开(公告)日：1998-06-02
申请号：JP25233497
申请日：1997-09-17
Applicant: HAMAMATSU PHOTONICS KK
Inventor： ARAGAKI MINORU , HIROHATA TORU , SUGA HIROBUMI , YAMADA MASAMI
Abstract: PROBLEM TO BE SOLVED: To provide a photo-electric cathode which is applicable for both reflection type or permeation type electron tubes gives higher quantum efficiency than a crystal diamond thin film and provide an electron tube equipped with the cathode. SOLUTION: This photo-electric cathode comprises at least polycrystalline diamond or a first layer 30 (610) of a material mainly containing polycrystalline diamond. As an applied example of the photoelectric cathode, the surface of the first layer 30 is terminated by hydrogen 32 or oxygen. Moreover, a second layer (620) of an alkali metal or its compound may be formed on the polycrystalline diamond layer 30 whose surface is terminated with hydrogen 32 or oxygen.
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公开(公告)号：JPH04269419A
公开(公告)日：1992-09-25
申请号：JP2997191
申请日：1991-02-25
Applicant: HAMAMATSU PHOTONICS KK
Inventor： ARAGAKI MINORU , IHARA TSUNEO , HIROHATA TORU , SUZUKI TOMOKO , NAKAMURA KOJI , ASAKURA NORIO , YAMADA MASAMI , NEGI YASUHARU , KUROYANAGI TOMIHIKO , MIZUSHIMA YOSHIHIKO
Abstract: PURPOSE:To form a Shottky electrode with good reproducibility, stability, and high heat resistance and obtain a highly sensitive semiconductive photoelectron-emitting body by increasing transmittance of incident photons and the extrication probability of photoelectrons to vacuum. CONSTITUTION:An ohmic electrode 12 is formed on one side of a p-type InP semiconductor 11 and a Shottky electrode 13 is formed on the other side. The Shottky electrode 13 is formed into a mesh pattern by vacuum evaporation of Al and patterning by the photolithographic method. Photoelectrons are excited in the semiconductor 11 by incident photons, accerelated by an electric field generated by application of bias voltage VB between respective electrodes 12, 13, and released to vacuum through each Cs2O layer 14 between electrodes 13.
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公开(公告)号：JPH10223131A
公开(公告)日：1998-08-21
申请号：JP2691997
申请日：1997-02-10
Applicant: HAMAMATSU PHOTONICS KK
Inventor： ARAGAKI MINORU , HIROHATA TORU , SUGA HIROBUMI , YAMADA MASAMI
IPC: H01J1/34
Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric surface which is sensitive, even for the light having a wavelength greater than 225nm. SOLUTION: A photoelectric surface is composed of a base board, consisting of Si, polycrystalline diamond 22 formed on the base board and doped with B and N to form an impurity level on the forbidden band, and mono-atomic layer 23 of hydrogen which is coupled with uncoupled carbon at the surface of the diamond 22 and lowers its work function effectively. Accordingly, the impurity elements form an impurity level between a valence electron band and conduction band, so that a sensitivity in the visible region is provided for the light having a wavelength greater than the wavelength corresponding to the energy gap of the polycrystalline diamond 22. Because the polycrystalline diamond with the work function dropped by the mono-atomic layer 23 of hydrogen has a large energy gap, the electron affinity force is easily nullified or becomes negative.
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