公开(公告)号：JP2014107446A

公开(公告)日：2014-06-09

申请号：JP2012260067

申请日：2012-11-28

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： YAMANAKA TATSUMI ,  SAKAMOTO AKIRA ,  HOSOKAWA NOBURO

IPC: H01L27/146 ,  H01L27/14 ,  H01L27/144 ,  H01L31/10

CPC classification number: H01L27/14663 ,  H01L27/14603 ,  H01L27/14636 ,  H01L31/022408 ,  H01L31/10 ,  H01L31/103

Abstract: PROBLEM TO BE SOLVED: To provide a photodiode array capable of improving an aperture ratio and reliability.SOLUTION: A photodiode array 1 comprises a plurality of photodiodes PD1 formed on a semiconductor substrate 2. Each of the photodiodes PD1 comprises: a first semiconductor region 3 of a first conductivity type provided on the semiconductor substrate 2; a second semiconductor region 5 of a second conductivity type provided on a surface 21 side with respect to the first semiconductor region 3 so as to surround a prescribed region and constituting a light detection region together with the first semiconductor region 3; and a through electrode 81a provided in a through hole 9A penetrating between the surface 21 and a surface 22 so that it passes through the first semiconductor region 3 and the prescribed region and electrically connected to the second semiconductor region 5. The through hole 9A includes a portion spreading from the surface 21 to the surface 22.

Abstract translation: 要解决的问题：提供能够提高开口率和可靠性的光电二极管阵列。解决方案：光电二极管阵列1包括形成在半导体衬底2上的多个光电二极管PD1。每个光电二极管PD1包括：第一半导体区域3 设置在半导体衬底2上的第一导电类型; 第二导电类型的第二半导体区域5，其设置在相对于第一半导体区域3的表面21侧，以围绕规定区域并与第一半导体区域3一起构成光检测区域; 以及设置在贯穿第一半导体区域3和规定区域并与第二半导体区域5电连接的表面21与表面22之间的通孔9A中的贯通电极81a。贯通孔9A包括： 部分从表面21扩展到表面22。

公开(公告)号：JP2003232679A

公开(公告)日：2003-08-22

申请号：JP2002034298

申请日：2002-02-12

Applicant: HAMAMATSU PHOTONICS KK

Inventor： MIZUNO SEIICHIRO ,  YAMANAKA TATSUMI ,  FUJII YOSHIMAROU

IPC: G01J1/02 ,  G01J1/44 ,  G01T1/20 ,  H01L25/16 ,  H01L27/146 ,  H01L31/10 ,  H04N5/32 ,  H04N5/357 ,  H04N5/363 ,  H04N5/378

Abstract: PROBLEM TO BE SOLVED: To provide a light detecting device capable of increasing the picture element number, capable of realizing high density, and capable of accurately detecting the light. SOLUTION: This light detecting device 1 has a photodiode PDn, an integrating circuit 10n, a CDS circuit 20n, and a hold circuit 30n. The integrating circuit 10n includes an amplifier 11n, a capacity element C, and a switch SW. The photodiode PDn is arranged on a first base board 100. A differential pair input part (transistors T 1 and T 2 ) of the amplifier 11n of the integrating circuit 10n and the capacity element C are arranged on a second base board 200. A driving part (transistors T 5 and T 6 ) of the amplifier 11n of the integrating circuit 10n is arranged on a third base board 300. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2001217452A

公开(公告)日：2001-08-10

申请号：JP2000028138

申请日：2000-02-04

Applicant: HAMAMATSU PHOTONICS KK

Inventor： OKAMOTO KOJI ,  YAMANAKA TATSUMI ,  FUJII YOSHIMAROU

IPC: G11B7/13 ,  H01L31/10

Abstract: PROBLEM TO BE SOLVED: To solve a problem in which read errors occur due to the fact that electrons excited by light impinging on a semiconductor substrate other than a photoelectric conversion part penetrate into the photoelectric conversion part, and the continuous reflection of light between a part of the semiconductor photodetector other than a photoelectric conversion part and a medium as an object of reading causes excessive light to impinge on the photoelectric conversion part in a semiconductor photodetector which is used as the photodetector of an optical reader. SOLUTION: An anti-reflection film is provided on a part of a semiconductor substrate other than a photoelectric conversion part to prevent light from being reflected, an insulating film is provided between the semiconductor substrate and the photoelectric conversion part so as to prevent electrons excited by light impinging on the semiconductor substrate from penetrating into the photoelectric conversion part, by which an optical reader can be improved in reading accuracy.

公开(公告)号：JP2008159711A

公开(公告)日：2008-07-10

申请号：JP2006344902

申请日：2006-12-21

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： YAMANAKA TATSUMI ,  SAWARA MASAAKI ,  FUJIWARA HIDENORI

IPC: H01L27/146 ,  H01L31/10 ,  H04N5/32

CPC classification number: H01L27/14603 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14654

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light detecting element wherein the occurrence of crosstalk can be suppressed sufficiently, and to provide a radiation detector. SOLUTION: A photo diode array PD1 comprises an n-type semiconductor substrate with the one face being an incident plane for a light to be detected, a plurality of photosensitive regions 3 consisting of a plurality of pn-junction type photo diodes which are formed on the detection plane side opposite to the incident plane of the semiconductor substrate, and a carrier trapping portion 12 formed between adjacent photosensitive regions 3 out of the plurality of photosensitive regions 3. The carrier trapping portion 12 has such a structure that one or a plurality of carrier trapping regions 13, each including a pn-junction, are arranged being spaced apart from each other. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供能够充分抑制串扰的发生并提供辐射检测器的半导体光检测元件。 解决方案：光电二极管阵列PD1包括n型半导体衬底，其中一个面是用于待检测光的入射面，多个光敏区3由多个pn结型光电二极管组成， 形成在与半导体衬底的入射面相反的检测平面侧上，以及形成在多个感光区域3中的相邻感光区域3之间的载体俘获部分12.载体捕获部分12具有这样的结构： 每个包括pn结的多个载流子俘获区域13被布置为彼此间隔开。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2000299489A

公开(公告)日：2000-10-24

申请号：JP10805699

申请日：1999-04-15

Applicant: HAMAMATSU PHOTONICS KK

Inventor： OKAMOTO KOJI ,  YAMANAKA TATSUMI ,  FUJII YOSHIMAROU

IPC: H01L31/10 ,  G02B6/42 ,  H01L31/0232

Abstract: PROBLEM TO BE SOLVED: To provide a photoelectric conversion element where assembly in a post- process can be executed easily, and to provide its manufacturing method and a light receiver. SOLUTION: In a photoelectric conversion element, a semiconductor layer is formed on a support substrate, a rear side touches the supporting substrate, and the photodiode of PIN structure is given to the semiconductor layer of a photoelectric conversion region converting an incident light signal into an electrical signal, a surface layer 21 formed by doping a first conductivity-type impurity on the surface layer part of a surface side in the photoelectric conversion region of the semiconductor layer, a rear layer 24 formed by doping a second conductivity-type impurity on the surface layer part of the rear side in the photoelectric conversion region of the semiconductor layer, a peripheral conducting layer 23 formed by doping the second conductivity-type impurity on a region surrounding the photoelectric conversion region of the semiconductor layer, so that it is connected to the rear layer and is detached from the surface layer, electrodes 31 and 33 formed positioned on the surface side of the semiconductor layer and are connected to the surface layer, and the peripheral conducting layer are installed. Thus, the surfaces of the contacts of the electrodes 31 and 33 can be flush, and the assembly of a post-process can easily be formed.

公开(公告)号：JP2000299487A

公开(公告)日：2000-10-24

申请号：JP10963099

申请日：1999-04-16

Applicant: HAMAMATSU PHOTONICS KK

Inventor： OKAMOTO KOJI ,  YAMANAKA TATSUMI ,  HAKAMATA YASUO ,  FUJII YOSHIMAROU

IPC: H01L31/10

Abstract: PROBLEM TO BE SOLVED: To provide a light receiving element for ultraviolet rays, which is highly reliable with respect to lapse of time. SOLUTION: An n- type epitaxial layer 2 is formed on an n+ type silicon substrate 1. A p- type first impurity layer 3, p-type guard ring layer 4, n+ type channel stopper layers 5 and n-type second impurity layers 6 are formed on the n-type epitaxial layer 2. Silicon oxide films 7 are formed on the n- type epitaxial layer 2, and anode electrodes 8 and cathode electrodes 9, which are formed of metal, are formed on the silicon oxide film 7. A cathode electrode 10 is formed under surface of the n+ type silicon substrate 1. The silicone oxidized film 7 is formed to be thick in a range equivalent to a gap between the guard ring layers 4 and the channel stopper layers 5. The thick silicon oxide film 7 is covered by the cathode electrodes 9.

公开(公告)号：JPH11230784A

公开(公告)日：1999-08-27

申请号：JP2979098

申请日：1998-02-12

Applicant: HAMAMATSU PHOTONICS KK

Inventor： FUJII YOSHIMAROU ,  SUZUKI HIROTO ,  YAMANAKA TATSUMI

IPC: G01D5/36 ,  H01L31/12

Abstract: PROBLEM TO BE SOLVED: To provide an optical encoder improvable in performance. SOLUTION: The optical encoder 1 has a p-n junction 12j on the surface opposite to a light receiving surface of a semiconductor photodetector element 12, and electrodes 112p, 112n provided on a p type and n type semiconductor layers 12p, 12n constituting the pn junction are connected to outside through conductive bumps MB. In this encoder, the electrodes and wirings provided on the light receiving surface in prior art can be provided on the opposite surface, and the resolution can be improved by putting movable members near the light receiving surface. The electrodes 112-p, 112n are connected to outside through the conductive bumps MB, and hence a bias voltage can be applied to the electrodes 112-p, 112n through the conductive bumps MB from outside.

公开(公告)号：JP2014107445A

公开(公告)日：2014-06-09

申请号：JP2012260066

申请日：2012-11-28

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： YAMANAKA TATSUMI ,  SAKAMOTO AKIRA ,  HOSOKAWA NOBURO

IPC: H01L27/144 ,  H01L27/14 ,  H01L31/10

CPC classification number: H01L31/022408 ,  H01L27/14663 ,  H01L31/103

Abstract: PROBLEM TO BE SOLVED: To provide a photodiode array capable of improving an aperture ratio and reliability.SOLUTION: A photodiode array 1 comprises a plurality of photodiodes PD1 formed on a semiconductor substrate 2. Each of the photodiodes PD1 comprises: a first semiconductor region 3 of a first conductivity type provided on the semiconductor substrate 2; a second semiconductor region 4 of a first conductivity type provided on the surface 21 side of the semiconductor substrate 2 with respect to the first semiconductor region and having higher impurity concentration than impurity concentration of the first semiconductor region 3; a third semiconductor region 5 of a second conductivity type provided on the surface 21 side with respect to the first semiconductor region 3 so as to surround the second semiconductor region 4 apart from the second semiconductor region 4 and constituting a light detection region together with the first semiconductor region 3; and a through electrode 81a provided in a through hole 9A penetrating between the surface 21 and a surface 22 so that it passes through the first semiconductor region and the second semiconductor region and electrically connected to a third semiconductor region 5.

Abstract translation: 要解决的问题：提供能够提高开口率和可靠性的光电二极管阵列。解决方案：光电二极管阵列1包括形成在半导体衬底2上的多个光电二极管PD1。每个光电二极管PD1包括：第一半导体区域3 设置在半导体衬底2上的第一导电类型; 第一导电类型的第二半导体区域4设置在半导体衬底2的相对于第一半导体区域的表面21侧，并且杂质浓度高于第一半导体区域3的杂质浓度; 第二导电类型的第三半导体区域5相对于第一半导体区域3设置在表面21侧，以围绕第二半导体区域4与第二半导体区域4隔开，并与第一半导体区域3一起构成光检测区域 半导体区域3; 以及设置在穿过表面21和表面22的通孔9A中的贯通电极81a，使得其穿过第一半导体区域和第二半导体区域并电连接到第三半导体区域5。

公开(公告)号：JP2011159984A

公开(公告)日：2011-08-18

申请号：JP2011059327

申请日：2011-03-17

Applicant: Hamamatsu Photonics Kk ,  浜松ホトニクス株式会社

Inventor： YAMANAKA TATSUMI

IPC: H01L27/146 ,  G01T1/20 ,  H01L27/14 ,  H01L27/144 ,  H01L27/148 ,  H01L31/06 ,  H01L31/10

CPC classification number: G01T1/2018 ,  G01T1/2006 ,  H01L27/1446 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14661 ,  H01L31/118

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor photodetecting element and a radiation detector which can favorably suppress the occurrence of crosstalk. SOLUTION: On the front side of an n-type semiconductor substrate 5, p-type regions 7 are two-dimensionally arranged in an array. A high-concentration n-type region 9 and a p-type region 11 are disposed between the p-type regions 7 adjacent each other. The high-concentration n-type region 9 is formed by diffusing an n-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 as seen from the front side. The p-type region 11 is formed by diffusing a p-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 and high-concentration n-type region 9 as seen from the front side. An electrode 15 electrically connected to the p-type region 7 and an electrode 19 electrically connected to the high-concentration n-type region 9 and the p-type region 11 are formed on the front side of the n-type semiconductor substrate 5. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供可以有利地抑制串扰的发生的半导体光电检测元件和辐射检测器。 解决方案：在n型半导体衬底5的正面上，p型区域7被二维排列成阵列。 在彼此相邻的p型区域7之间设置有高浓度的n型区域9和p型区域11。 通过从基板5的正面侧扩散n型杂质，以从正面看，包围p型区域7，形成高浓度n型区域9。 p型区域11通过从基板5的前侧扩散p型杂质而形成，以便包围从正面观察的p型区域7和高浓度n型区域9。 电连接到p型区域7的电极15和与高浓度n型区域9和p型区域11电连接的电极19形成在n型半导体衬底5的正面上。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2003232859A

公开(公告)日：2003-08-22

申请号：JP2002034288

申请日：2002-02-12

Applicant: HAMAMATSU PHOTONICS KK

Inventor： YAMANAKA TATSUMI

IPC: G01T1/20

Abstract: PROBLEM TO BE SOLVED: To dispose with ease two-dimensionally arranged scintillators and photodiodes so that they can correspond accurately to each other. SOLUTION: A plurality of p-type semiconductor layers 22 are provided on a surface of a photodiode array 2. Recessed grooves 31 for positioning are formed around the semiconductor layers 22. The scintillators 11 are disposed on the front surface side of the array 2 so as to correspond to the semiconductor layers 22. The scintillators 11 are held by hold members 12, and ridges 13 for positioning are formed on bottom parts of the members 12 so as to project toward the array 2 side. By fitting the ridges 13 for positioning into the grooves 31 for positioning, the scintillators 11 are positioned relative to the semiconductor layers 22. COPYRIGHT: (C)2003,JPO