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公开(公告)号：DE112013005685T5
公开(公告)日：2015-09-24
申请号：DE112013005685
申请日：2013-11-26
Applicant: HAMAMATSU PHOTONICS KK
Inventor： YAMANAKA TATSUMI , SAKAMOTO AKIRA , HOSOKAWA NOBURO
IPC: H01L27/146 , H01L27/14 , H01L27/144 , H01L31/10
Abstract: Eine Fotodiodenanordnung umfasst eine Vielzahl von in einem Halbleiterträgermaterial gebildeten Fotodioden. Jede der Fotodioden umfasst einen ersten Halbleiterbereich eines ersten Leitungstyps, und welcher in dem Trägermaterial vorgesehen ist, einen zweiten Halbleiterbereich eines zweiten Leitungstyps, welcher mit Bezug zu dem ersten Halbleiterbereich auf einer Oberflächenseite des Halbleiterträgermaterials so vorgesehen ist, dass ein vorbestimmter Bereich umgeben ist, und welcher zusammen mit dem ersten Halbleiterbereich einen Lichterkennungsbereich bildet, und eine Durchbruchselektrode, welche innerhalb einer durch die eine Oberfläche und die andere Oberfläche des Halbleiterträgermaterials hindurchtretende Durchbruchsöffnung so aufweist, dass diese durch den ersten Halbleiterbereich und den vorbestimmten Bereich hindurch tritt und den zweiten Halbleiterbereich elektrisch verbindet. Die Durchbruchsöffnung umfasst einen sich von der einen Oberfläche bis zu der anderen Oberfläche erstreckenden Teilbereich.
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公开(公告)号：AU2003207058A1
公开(公告)日：2003-09-04
申请号：AU2003207058
申请日：2003-02-12
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUNO SEIICHIRO , YAMANAKA TATSUMI , FUJII YOSHIMARO
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公开(公告)号：DE112013005690T5
公开(公告)日：2015-10-15
申请号：DE112013005690
申请日：2013-11-26
Applicant: HAMAMATSU PHOTONICS KK
Inventor： YAMANAKA TATSUMI , HOSOKAWA NOBURO , SAKAMOTO AKIRA
IPC: H01L27/144 , H01L27/14 , H01L31/10
Abstract: Diese Fotodiodenanordnung ist mit einer Vielzahl von Fotodioden ausgestattet, welche auf einem Halbleiterträgermaterial ausgebildet sind. Jede der Fotodioden weist auf: einen ersten Halbleiterbereich eines ersten Leitungstyps, welcher auf dem Halbleiterträgermaterial vorgesehen ist; einen zweiten Halbleiterbereich des ersten Leitungstyps, welcher eine höhere Störstellenkonzentration als die des ersten Halbleiterbereichs aufweist und auf einer Oberfläche des Halbleiterträgermaterials in Bezug zu dem ersten Halbleiterbereich positioniert ist; einen dritten Halbleiterbereich eines zweiten Leitungstyps, welcher den ersten Halbleiterbereich und einen Fotodetektionsbereich bildet und an der einen Oberfläche in Bezug zu dem ersten Halbleiterbereich so vorgesehen ist, um den zweiten Halbleiterbereich zu umgeben und von dem zweiten Halbleiterbereich getrennt zu sein; und eine Durchbruchselektrode, welche mit dem dritten Halbleiterbereich elektrisch verbunden ist und innerhalb einer Durchbruchsöffnung zum Hindurchtreten zwischen der einen Oberfläche und der anderen Oberfläche des Halbleiterträgermaterials positioniert ist, um durch den ersten Halbleiterbereich und den zweiten Halbleiterbereich hindurch zu treten.
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公开(公告)号：IL163454A
公开(公告)日：2009-06-15
申请号：IL16345404
申请日：2004-08-10
Applicant: HAMAMATSU PHOTONICS KK , MIZUNO SEIICHIRO , YAMANAKA TATSUMI , FUJII YOSHIMARO
Inventor： MIZUNO SEIICHIRO , YAMANAKA TATSUMI , FUJII YOSHIMARO
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公开(公告)号：IL175082A
公开(公告)日：2013-07-31
申请号：IL17508206
申请日：2006-04-20
Applicant: HAMAMATSU PHOTONICS KK , YAMANAKA TATSUMI
Inventor： YAMANAKA TATSUMI
IPC: H01L20060101 , G01T1/20 , H01L27/14 , H01L27/144 , H01L27/146 , H01L27/148 , H01L31/06 , H01L31/10
Abstract: On the front side of an n-type semiconductor substrate 5, p-type regions 7 are two-dimensionally arranged in an array. A high-concentration n-type region 9 and a p-type region 11 are disposed between the p-type regions 7 adjacent each other. The high-concentration n-type region 9 is formed by diffusing an n-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 as seen from the front side. The p-type region 11 is formed by diffusing a p-type impurity from the front side of the substrate 5 so as to surround the p-type region 7 and high-concentration n-type region 9 as seen from the front side. Formed on the front side of the n-type semiconductor substrate 5 are an electrode 15 electrically connected to the p-type region 7 and an electrode 19 electrically connected to the high-concentration n-type region 9 and the p-type region 11. This realizes a semiconductor photodetector and radiation detecting apparatus which can favorably suppress the occurrence of crosstalk, and restrain carriers from flowing into adjacent photodiodes even when a photodiode falls into an electrically floating state because of a breakage of a connecting point due to an initial connection error, a temperature cycle, etc.
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Patent Agency Ranking
公开(公告)号：EP1677353A4
公开(公告)日：2007-08-01
申请号：EP04787692
申请日：2004-09-07
Applicant: HAMAMATSU PHOTONICS KK
Inventor： YAMANAKA TATSUMI
IPC: H01L27/146 , H01L27/14 , H01L27/144 , H01L27/148 , H01L31/06
CPC classification number: G01T1/2018 , G01T1/2006 , H01L27/1446 , H01L27/1463 , H01L27/1464 , H01L27/14661 , H01L31/118
Abstract: On the surface side of an n-type semiconductor substrate (5), p-type regions (7) are arrayed two-dimensionally. A heavily doped n-type region (9) and a p-type region (11) are arranged between adjacent p-type regions (7). The heavily doped n-type region (9) is formed to surround the p-type region (7), when viewed from the surface side, by diffusing n-type impurities from the surface side of the substrate (5). The p-type region (11) is formed to surround the p-type region (7) and the heavily doped n-type region (9), when viewed from the surface side, by diffusing p-type impurities from the surface side of the substrate (5). On the surface side of the n-type semiconductor substrate (5), an electrode (15) being connected electrically with the p-type regions (7) and an electrode (19) being connected electrically with the heavily doped n-type region (9) and the p-type region (11) are formed. A semiconductor photodetecting element and a radiation detector, in which crosstalk can be suppressed well and inflow of carriers to an adjacent photodiode can be suppressed even if some photodiode is brought into electrically floating state due to initial connection error or damage of a connecting point due to temperature cycle, are thereby realized.
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公开(公告)号：EP1473553A4
公开(公告)日：2007-03-21
申请号：EP03703333
申请日：2003-02-12
Applicant: HAMAMATSU PHOTONICS KK
Inventor： MIZUNO SEIICHIRO , YAMANAKA TATSUMI , FUJII YOSHIMARO
IPC: G01J1/44 , G01J1/02 , G01T1/20 , H01L25/16 , H01L27/14 , H01L27/146 , H01L31/10 , H04N5/32 , H04N5/357 , H04N5/363 , H04N5/378
CPC classification number: H01L25/167 , G01J1/44 , H01L27/14609 , H01L27/14634 , H01L2924/0002 , H04N5/37457 , H01L2924/00
Abstract: Photodetector 1 is equipped with photodiodes PDn, integrating circuits 10n, CDS circuits 20n, and hold circuits 30n. Each integrating circuit 10n includes an amplifier 11n, a capacitor C, and a switch SW. Photodiodes PDn are aligned on a first substrate 100. A differential pair input part (transistors T1 and T2) of amplifier 11n, capacitor C, etc., of each integrating circuit 10n are disposed on a second substrate 200. A drive part (transistors T5 and T6) of amplifier 11n, etc., of each integrating circuit 10n are disposed on a third substrate 300.
Abstract translation: 光检测器1配备有光电二极管PDn，集成电路10n，CDS电路20n和保持电路30n。 每个积分电路10n包括放大器11n，电容器C和开关SW。 光电二极管PDn在第一基板100上对准。每个积分电路10n的放大器11n，电容器C等的差分对输入部分（晶体管T1和T2）设置在第二基板200上。驱动部分（晶体管T5 和T6）放置在每个积分电路10n的放大器11n等上，设置在第三基板300上
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公开(公告)号：JP2000161911A
公开(公告)日：2000-06-16
申请号：JP33989198
申请日：1998-11-30
Applicant: HAMAMATSU PHOTONICS KK
Inventor： OKAMOTO KOJI , TANAKA HITOSHI , YAMANAKA TATSUMI , FUJII YOSHIMAROU
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor position detecting element which is superior in linearity and stability of position detection. SOLUTION: Impurity density of a photodetection surface resistance layer 1a is made nearly equal to that of a dividing line resistance layer of a dividing line resistance part 2, where the photodetection surface resistance layer 1a is connected by composing the photodetection surface resistance part 1 of a photodetection surface resistance layer 1a, where line resistance layers 10 are arrayed in a two-dimensional shape to suppress its resistance value and variation in the resistance ratio to the dividing line resistance layer, thereby obtaining the semiconductor position detecting element which has superior stability of position detection. An area shown by an arcuate curve A is set in the photodetection surface resistance part 1 and the mesh part outside it is formed of an additional conduction part 22 with low resistance, so as to correct the distortion of the position detection, thereby obtaining the semiconductor position detecting element having superior linearity.
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公开(公告)号：JP2003232860A
公开(公告)日：2003-08-22
申请号：JP2002034290
申请日：2002-02-12
Applicant: HAMAMATSU PHOTONICS KK
Inventor： YAMANAKA TATSUMI , FUJII YOSHIMAROU
IPC: G01T1/20
Abstract: PROBLEM TO BE SOLVED: To dispose with ease two-dimensionally arranged scintillators and photodiodes so that they can correspond accurately to each other. SOLUTION: A photodiode array 20 is provided with p-type semiconductor layers 22 on the front surface side thereof. Light reflection films 31 are formed in positions away from the layers 22 on the surface side of the array 2. A scintillator panel 1 is disposed on the front surface side of the array 2. The scintillators 11 are disposed in positions on the panel 1 corresponding to the layers 22, and light-outgoing surfaces 11B of the scintillators 11 are made larger than the areas of exposed parts of the layers 22. The areas of radiation- incoming surfaces 11A of the scintillators 11 are made larger than the areas of the surfaces 11B. COPYRIGHT: (C)2003,JPO
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公开(公告)号：JP2003232858A
公开(公告)日：2003-08-22
申请号：JP2002034285
申请日：2002-02-12
Applicant: HAMAMATSU PHOTONICS KK
Inventor： YAMANAKA TATSUMI
Abstract: PROBLEM TO BE SOLVED: To make it possible to dispose with ease two-dimensionally arranged scintillators and photodiodes so that they can correspond accurately to each other. SOLUTION: Fitting recess parts 29 are formed in positions corresponding to p-type semiconductor layers 22 on the backside of a photodiode array 2. Lower end parts of the scintillators 11 on a scintillator panel 1 are each provided with a taper whose width decreases as it approaches the array 2. The recess parts 29 are each provided with a tape of the same angle as the taper formed on the lower end parts of the scintillators 11. The scintillators 11 can be positioned relative to the semiconductor layers 22 only by fitting the lower end parts of the scintillators 11 into the recess parts 29. COPYRIGHT: (C)2003,JPO
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