System and method for buried electrical feedthroughs in a glass-silicon MEMS process

    公开(公告)号:AU2004220026A1

    公开(公告)日:2004-09-23

    申请号:AU2004220026

    申请日:2004-03-10

    Abstract: A method for providing conductive paths into a hermetically sealed cavity is described. The sealed cavity is formed utilizing a silicon-glass micro-electromechanical structure (MEMS) process and the method includes forming recesses on a glass substrate everywhere that a conductive path is to pass into the cavity, and forming conductive leads in and around the recesses. A glass layer is deposited over the substrate, into the recesses, and over the conductive leads and then planarized to expose portions of the conductive leads. A sealing surface is formed on at least a portion of the glass layer. Silicon is then bonded to the sealing surface of the planarized glass layer, the wafer being configured such that a portion of each lead is within the sealed cavity and a portion of each lead is outside the sealed cavity.

    12.
    发明专利
    未知

    公开(公告)号:DE602004012590D1

    公开(公告)日:2008-04-30

    申请号:DE602004012590

    申请日:2004-10-19

    Abstract: A method for fabricating a MEMS device having a top cap and an upper sense plate is described. The method includes producing a device wafer including an etched substrate, etched MEMS device components, and interconnect metal, a portion of the interconnect metal being bond pads and adding a metal wraparound layer to a back side, edges, and a portion of a front side of the device wafer. The method also includes producing an upper wafer including an etched substrate and interconnect metal, bonding the device wafer and the upper wafer, and dicing the bonded upper wafer and device wafer into individual MEMS devices.

    13.
    发明专利
    未知

    公开(公告)号:DE602004006094T2

    公开(公告)日:2008-01-10

    申请号:DE602004006094

    申请日:2004-03-10

    Abstract: A method for providing conductive paths into a hermetically sealed cavity is described. The sealed cavity is formed utilizing a silicon-glass micro-electromechanical structure (MEMS) process and the method includes forming recesses on a glass substrate everywhere that a conductive path is to pass into the cavity, and forming conductive leads in and around the recesses. A glass layer is deposited over the substrate, into the recesses, and over the conductive leads and then planarized to expose portions of the conductive leads. A sealing surface is formed on at least a portion of the glass layer. Silicon is then bonded to the sealing surface of the planarized glass layer, the wafer being configured such that a portion of each lead is within the sealed cavity and a portion of each lead is outside the sealed cavity.

    METHODS AND SYSTEMS FOR PROVIDING MEMS DEVICES WITH A TOP CAP AND UPPER SENSE PLATE

    公开(公告)号:CA2541201A1

    公开(公告)日:2005-08-04

    申请号:CA2541201

    申请日:2004-10-19

    Abstract: A method for fabricating a MEMS device having a top cap and an upper sense plate is described. The method includes producing a device wafer including an etched substrate, etched MEMS device components, and interconnect metal, a portion of the interconnect metal being bond pads and adding a metal wraparound layer to a back side, edges, and a portion of a front side of the device wafer. The method also includes producing an upper wafer including an etched substrate and interconnect metal, bonding the device wafer and the upper wafer, and dicing the bonded upper wafer and device wafer into individual MEMS devices.

    ETCH STOP CONTROL FOR MEMS DEVICE FORMATION

    公开(公告)号:AU2003268113A1

    公开(公告)日:2004-02-23

    申请号:AU2003268113

    申请日:2003-08-05

    Inventor: HORNING ROBERT D

    Abstract: A microelectromechanical device is formed in a silicon semiconductor substrate. A metalization layer is formed on a glass wafer. A metal cap layer is then formed on the metalization layer, such that combined layers have a small surface work function that is less than approximately 5.17 eV. The semiconductor substrate is anodically bonded to the glass wafer, and then etched to remove silicon from the structures without significant excess etching of the microelectromechanical device, thus maintaining good control over critical dimensions of the microelectromechanical device.

    16.
    发明专利
    未知

    公开(公告)号:DE602004012590T2

    公开(公告)日:2009-04-23

    申请号:DE602004012590

    申请日:2004-10-19

    Abstract: A method for fabricating a MEMS device having a top cap and an upper sense plate is described. The method includes producing a device wafer including an etched substrate, etched MEMS device components, and interconnect metal, a portion of the interconnect metal being bond pads and adding a metal wraparound layer to a back side, edges, and a portion of a front side of the device wafer. The method also includes producing an upper wafer including an etched substrate and interconnect metal, bonding the device wafer and the upper wafer, and dicing the bonded upper wafer and device wafer into individual MEMS devices.

    17.
    发明专利
    未知

    公开(公告)号:DE602004006094D1

    公开(公告)日:2007-06-06

    申请号:DE602004006094

    申请日:2004-03-10

    Abstract: A method for providing conductive paths into a hermetically sealed cavity is described. The sealed cavity is formed utilizing a silicon-glass micro-electromechanical structure (MEMS) process and the method includes forming recesses on a glass substrate everywhere that a conductive path is to pass into the cavity, and forming conductive leads in and around the recesses. A glass layer is deposited over the substrate, into the recesses, and over the conductive leads and then planarized to expose portions of the conductive leads. A sealing surface is formed on at least a portion of the glass layer. Silicon is then bonded to the sealing surface of the planarized glass layer, the wafer being configured such that a portion of each lead is within the sealed cavity and a portion of each lead is outside the sealed cavity.

    18.
    发明专利
    未知

    公开(公告)号:AT360598T

    公开(公告)日:2007-05-15

    申请号:AT04719227

    申请日:2004-03-10

    Abstract: A method for providing conductive paths into a hermetically sealed cavity is described. The sealed cavity is formed utilizing a silicon-glass micro-electromechanical structure (MEMS) process and the method includes forming recesses on a glass substrate everywhere that a conductive path is to pass into the cavity, and forming conductive leads in and around the recesses. A glass layer is deposited over the substrate, into the recesses, and over the conductive leads and then planarized to expose portions of the conductive leads. A sealing surface is formed on at least a portion of the glass layer. Silicon is then bonded to the sealing surface of the planarized glass layer, the wafer being configured such that a portion of each lead is within the sealed cavity and a portion of each lead is outside the sealed cavity.

    Tunable optical filter
    19.
    发明专利

    公开(公告)号:AU2002326893A1

    公开(公告)日:2003-03-24

    申请号:AU2002326893

    申请日:2002-09-12

    Abstract: A tunable filter having a top mirror, a bottom mirror, and one or more intervening layers. The one or more intervening layers preferably have a refractive index that changes with temperature. By heating the one or more intervening layers, the wavelength that is selected by the optical filter can be controlled. The one or more intervening layers are preferably heated by passing current through the one or more intervening layers, or by passing current through a separate resistive layer that is thermally coupled to the one or more intervening layers. Such a filter can provide a high degree of wavelength selectivity in a robust and stable manner.

    Methods and systems for providing MEMS devices with a top cap and upper sense plate

    公开(公告)号:AU2004314333B2

    公开(公告)日:2008-09-11

    申请号:AU2004314333

    申请日:2004-10-19

    Abstract: A method for fabricating a MEMS device having a top cap and an upper sense plate is described. The method includes producing a device wafer including an etched substrate, etched MEMS device components, and interconnect metal, a portion of the interconnect metal being bond pads and adding a metal wraparound layer to a back side, edges, and a portion of a front side of the device wafer. The method also includes producing an upper wafer including an etched substrate and interconnect metal, bonding the device wafer and the upper wafer, and dicing the bonded upper wafer and device wafer into individual MEMS devices.

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