公开(公告)号：WO2004064090A3

公开(公告)日：2004-09-10

申请号：PCT/US2004000021

申请日：2004-01-05

Applicant: HONEYWELL INT INC

Inventor： HORNING ROBERT D ,  SCULLARD TIMOTHY LOUIS ,  MCDONALD ROBINSON

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81C1/00666 ,  B81C2201/0167 ,  Y10T74/12

Abstract: A method for controlling bow in wafers (50) which utilize doped layers is described. The method includes depositing a silicon-germanium layer (52) onto a substrate (14), depositing an undoped buffer layer (56) onto the silicon-germanium layer, and depositing a silicon-boron layer (58) onto the undoped layer.

Abstract translation: 描述了一种用于控制利用掺杂层的晶片（50）中的弓的方法。 该方法包括在衬底（14）上沉积硅 - 锗层（52），在硅 - 锗层上沉积未掺杂的缓冲层（56），并且在未掺杂的层上沉积硅 - 硼层（58）。

公开(公告)号：WO2005070817A2

公开(公告)日：2005-08-04

申请号：PCT/US2004034591

申请日：2004-10-19

Applicant: HONEYWELL INT INC ,  HORNING ROBERT D ,  RIDLEY JEFFREY A

Inventor： HORNING ROBERT D ,  RIDLEY JEFFREY A

IPC: B81B7/00 ,  B81C1/00 ,  B81C

CPC classification number: B81B7/007 ,  B81B2201/0242 ,  B81C2203/0118

Abstract: A method for fabricating a MEMS device (300) having a top cap (250) and an upper sense plate is described. The method includes producing (152) a device wafer (230) including an etched substrate (186), etched MEMS device components, and interconnect metal (198,200), a portion of the interconnect metal being bond pads (132) and adding (154) a metal wraparound layer (232) to a back side (330), edges (320), and a portion of a front side (342) of the device wafer. The method also includes producing (156) an upper wafer including an etched substrate and interconnect metal, bonding (160) the device wafer and the upper wafer, and dicing (164) the bonded upper wafer and device wafer into individual MEMS devices.

Abstract translation: 描述了一种用于制造具有顶盖（250）和上感测板的MEMS器件（300）的方法。 该方法包括制造（152）包括蚀刻的衬底（186），蚀刻的MEMS器件部件和互连金属（198,200）的器件晶片（230），所述互连金属的一部分是接合焊盘（132）和添加（154） 向后侧（330）的金属环绕层（232），边缘（320）和装置晶片的前侧（342）的一部分。 该方法还包括制造（156）包括蚀刻的衬底和互连金属的上晶片，将器件晶片和上晶片接合（160），以及将结合的上晶片和器件晶片切割（164）到单独的MEMS器件中。

公开(公告)号：WO2005046943A3

公开(公告)日：2005-08-11

申请号：PCT/US2004037350

申请日：2004-11-09

Applicant: HONEYWELL INT INC ,  OHNSTEIN THOMAS R ,  HORNING ROBERT D ,  YOUNGER DANIEL W

Inventor： OHNSTEIN THOMAS R ,  HORNING ROBERT D ,  YOUNGER DANIEL W

IPC: B25J9/06 ,  B25J18/06 ,  H02N1/00

CPC classification number: B08B9/045 ,  B25J9/06 ,  B25J9/065 ,  B25J18/06 ,  H02N1/006

Abstract: An elongated robotic member that is simple in design and structure, relatively inexpensive and consumes little power. In one illustrative embodiment, one or more linear actuators (4) are used in conjunction with two or more plates (8) that are fixed at spaced locations along a spine member (6). Fixed between each pair of plates is one or more actuators, which when activated, pull or push corresponding portions of the plates towards or away from each other. This changes the relative orientation of the plate pairs, thus providing a bending movement. The spine preferably is flexible at least in the lateral direction, and bends in response to the relative movement of the plates. A number of plate pairs may be provided to create an arbitrarily long robotic member.

Abstract translation: 一种细长的机器人构件，其设计和结构简单，相对便宜并且消耗的功率很小。 在一个说明性实施例中，一个或多个线性致动器（4）与两个或更多个板（8）结合使用，所述板（8）沿着脊柱构件（6）固定在间隔开的位置。 固定在每对板之间的是一个或多个致动器，当致动器被致动时，拉动或推动板的相应部分朝向或远离彼此。 这改变了板对的相对定向，从而提供弯曲运动。 脊柱优选至少在横向上是柔性的，并且响应于板的相对运动而弯曲。 可以提供多个板对以产生任意长的机器人构件。

公开(公告)号：WO0212115A3

公开(公告)日：2003-01-09

申请号：PCT/US0124723

申请日：2001-08-07

Applicant: HONEYWELL INT INC

Inventor： CABUZ CLEOPATRA ,  HORNING ROBERT D ,  ERDMANN FRANCIS M ,  GLENN MAX C

IPC: B81B3/00 ,  B81C1/00 ,  H01L21/308 ,  H01L29/84 ,  H01L21/22 ,  H01L21/20

CPC classification number: B81C1/00365 ,  B81C2201/0164 ,  Y10T428/21 ,  Y10T428/2495

Abstract: Layers of boron-doped silicon (36) having reduced out-of-plane curvature are disclosed. The layers have substantially equal concentrations of boron near th etop (38) and bottom (40) surfaces. Since the opposing concentrations are substantially equal, the compressive stresses on the layers (36) are substantially balanced, thereby resulting in layers (36) with reduced out-of-plane curvature.

Abstract translation: 公开了具有减小的平面外曲率的硼掺杂硅（36）的层。 这些层在顶部（38）和底部（40）表面附近具有基本相等的硼浓度。 由于相反的浓度基本相等，所以层（36）上的压缩应力基本平衡，从而导致具有减小的面外曲率的层（36）。

公开(公告)号：WO2006073829A2

公开(公告)日：2006-07-13

申请号：PCT/US2005046376

申请日：2005-12-21

Applicant: HONEYWELL INT INC ,  HORNING ROBERT D

Inventor： HORNING ROBERT D

IPC: B81C3/00 ,  B81C99/00

CPC classification number: B81C3/001 ,  B81C2203/031

Abstract: An approach where items of different temperatures are bonded to each other such that upon cooling down they contract in size resulting in zero residual stress between the bonded items at an ambient temperature. If materials of the bonded items have different thermal expansion coefficients and the items are put together at different bonding temperatures, then they may have insignificant residual stress upon cooling down to the ambient temperature (e.g., room temperature) because the different ranges of the temperature drops compensate for the different contractions.

Abstract translation: 一种将不同温度的物品彼此粘合的方法，使得在冷却时，它们的尺寸收缩，导致在环境温度下粘合物品之间的零残余应力。 如果粘合物料的材料具有不同的热膨胀系数，并且在不同的接合温度下将物品放在一起，则在冷却到环境温度（例如室温）时它们可能具有不显着的残余应力，因为温度的不同范围下降 补偿不同的收缩。

公开(公告)号：WO2004013038A3

公开(公告)日：2004-12-02

申请号：PCT/US0325806

申请日：2003-08-05

Applicant: HONEYWELL INT INC

Inventor： HORNING ROBERT D

IPC: B81B7/02 ,  B81C1/00 ,  H01L21/306 ,  H01L29/84

CPC classification number: B81C1/00539

Abstract: A microelectromechanical device is formed in a silicon semiconductor substrate. A metalization layer is formed on a glass wafer. A metal cap layer is then formed on the metalization layer, such that combined layers have a small surface work function that is less than approximately 5.17 eV. The semiconductor substrate is anodically bonded to the glass wafer, and then etched to remove silicon from the structures without significant excess etching of the microelectromechanical device, thus maintaining good control over critical dimensions of the microelectromechanical device.

Abstract translation: 微机电器件形成在硅半导体衬底中。 在玻璃晶片上形成金属化层。 然后在金属化层上形成金属覆盖层，使得组合层具有小于约5.17eV的小的表面功函数。 将半导体衬底阳极结合到玻璃晶片上，然后蚀刻以从结构中除去硅，而不会对微机电器件进行显着的过度蚀刻，从而保持对微机电器件的临界尺寸的良好控制。

公开(公告)号：WO02098788A3

公开(公告)日：2003-10-09

申请号：PCT/US0217216

申请日：2002-06-04

Applicant: HONEYWELL INT INC

Inventor： HORNING ROBERT D ,  BURNS DAVID W

IPC: B81B3/00 ,  B81C1/00 ,  C23F1/00

CPC classification number: B81C1/00595 ,  B81B2201/0264 ,  B81C2201/0164

Abstract: A method of making a silicon micromechanical structure, from a lightly doped silicon substrate having less than cm boron therein. A p+ layer having a boron content of greater than 7 x 10 cm and a germanium content of about 1 x 10 cm is placed on the substrate. A mask is formed on the second side, followed by etching to the p+ layer. An insulator is put on the p+ layer and an electronic component is fabricated thereon. Preferred micromechanical structures are pressure sensors, cantilevered accelerometers, and dual web biplane accelerometers. Preferred electronic components are dielectrically isolated piezoresistors and resonant microbeams. The method may include the step of forming a lightly doped layer on the p+ layer to form a buried p+ layer prior to etching.

Abstract translation: 从其中具有小于5×10 19 cm 3的硼的轻掺杂硅衬底制造硅微机械结构的方法。 具有大于7×10 19 cm -3的硼含量和约1×10 21 cm -3的锗含量的p +层被放置在衬底上。 在第二面上形成掩模，然后蚀刻到p +层。 将绝缘体放在p +层上，并在其上制造电子部件。 优选的微机械结构是压力传感器，悬臂加速度计和双网双平面加速度计。 优选的电子部件是介电离子压敏电阻器和共振微束。 该方法可以包括在p +层上形成轻掺杂层以在蚀刻之前形成掩埋的p +层的步骤。

公开(公告)号：WO02061790A3

公开(公告)日：2003-10-09

申请号：PCT/US0202975

申请日：2002-01-31

Applicant: HONEYWELL INT INC

Inventor： JOHNSON BURGESS R ,  BONNE ULRICH ,  HORNING ROBERT D ,  COLE BARRETT E

IPC: H01J3/02 ,  H01J1/13

CPC classification number: H01J3/022

Abstract: A microcathode which integrates both an electron emitter, or cathode, and an extractor electrode. The electron emitter is attached to the back side of a thin film microstructure on a first surface of a substrate. Electrons are emitted from the electron emitter and into a via extending through the substrate. An electron beam is formed which is pulled through the via and out of the microcathode by an extractor electrode on a second surface of the substrate. The extractor electrode modulates the electron beam current, defines the beam profile, and accelerates the electrons toward an anode located outside of the microcathode. Microcathode of this invention are particularly suitable as electron emitting devices useful for various types of electron beam utilizing equipment such as flat cathode ray tube displays, microelectronic vacuum tube amplifiers, electron beam exposure devices and the like.

Abstract translation: 集成了电子发射体或阴极以及提取电极的微电极。 电子发射体附着在衬底的第一表面上的薄膜微结构的背面。 电子从电子发射器发射到延伸穿过衬底的通孔中。 形成电子束，该电子束通过基板的第二表面上的提取器电极被引导通过通孔并离开微电极。 提取器电极调制电子束电流，限定光束分布，并将电子加速到位于微电极外部的阳极。 本发明的微电极特别适合作为适用于各种电子束利用设备的电子发射装置，例如平面阴极射线管显示器，微电子真空管放大器，电子束曝光装置等。

公开(公告)号：DE602004009673D1

公开(公告)日：2007-12-06

申请号：DE602004009673

申请日：2004-03-26

Applicant: HONEYWELL INT INC

Inventor： MALAMETZ DAVID L ,  HORNING ROBERT D ,  BECKA STEPHEN F

IPC: G01P15/125 ,  B81B3/00 ,  G01P15/08

Abstract: A low cost, pendulous, capacitive-sensing Micro Electro-Mechanical Systems (MEMS) accelerometer is provided. The accelerometer includes a pendulous proof mass, one or more securing pads, and one or more flexures coupled with the pendulous proof mass and the one or more securing pads. The flexures flex linearly with respect to motion of the pendulous proof mass. First and second capacitor plates are positioned relative to the pendulous proof mass for detecting motion of the proof mass according to a sensed difference in capacitance. One or more strain isolation beams are connected between the one or more flexures and the pendulous proof mass or the securing pads. The strain isolation beams protect the flexures from mechanical strain.

公开(公告)号：AU2004314333A1

公开(公告)日：2005-08-04

申请号：AU2004314333

申请日：2004-10-19

Applicant: HONEYWELL INT INC

Inventor： RIDLEY JEFFREY A ,  HORNING ROBERT D

IPC: B81C1/00 ,  B81B7/00

Abstract: A method for fabricating a MEMS device having a top cap and an upper sense plate is described. The method includes producing a device wafer including an etched substrate, etched MEMS device components, and interconnect metal, a portion of the interconnect metal being bond pads and adding a metal wraparound layer to a back side, edges, and a portion of a front side of the device wafer. The method also includes producing an upper wafer including an etched substrate and interconnect metal, bonding the device wafer and the upper wafer, and dicing the bonded upper wafer and device wafer into individual MEMS devices.