公开(公告)号：DE2246147A1

公开(公告)日：1973-05-17

申请号：DE2246147

申请日：1972-09-20

Applicant: IBM

Inventor： ANTIPOV IGOR ,  OBERAI AVTAR SINGH

IPC: H01L21/331 ,  H01L21/8228 ,  H01L27/082 ,  H01L29/417 ,  H01L29/73 ,  H01L7/64

公开(公告)号：DE3476943D1

公开(公告)日：1989-04-06

申请号：DE3476943

申请日：1984-11-23

Applicant: IBM

Inventor： ANTIPOV IGOR

IPC: H01L27/04 ,  H01L21/285 ,  H01L21/331 ,  H01L21/822 ,  H01L29/10 ,  H01L29/73 ,  H01L29/732 ,  H01L29/8605 ,  H01L21/31

Abstract: Disclosed is a dumbbell-shaped resistor structure fabricated in a semiconductor substrate for determining the resistivity of the intrinsic base of a polysilicon base transistor. The structure includes a p-doped base region (43, 44) having two large parts separated by a narrow part, resembling a flattened dumbbell, each of which extends into the substrate. An n-type emitter region (45) extends a distance into a portion of the narrow and the second large parts of the base region. An n-type reach-through region (33) extends from the emitter region through the base region electrically isolating a portion of the narrow and second large parts of the base region from the remainder of the base region and forming an electrically continuous p-type path between the first large part of the base region and the portion of the second large part of the base region within the reach-through region.

公开(公告)号：FR2347777A1

公开(公告)日：1977-11-04

申请号：FR7629494

申请日：1976-09-22

Applicant: IBM

Inventor： ANTIPOV IGOR ,  CALHOUN HARRY C

IPC: H01L21/22 ,  H01L21/331 ,  H01L21/76 ,  H01L21/761 ,  H01L21/8228 ,  H01L27/082 ,  H01L29/73 ,  H01L21/74

Abstract: A substrate (I) of a first conductivity type is provided with highly doped zones (II) of the second conductivity type, which act as buried collector zone of a vertical and buried base zone of a complementary lateral transistor. Highly doped zones (III) of the first conductivity type are formed between (II) as insulation zone and in (II) of the lateral transistor as part of the emitter zone, which then diffuse more strongly into an epitaxial layer of the second conductivity type, grown on (I), than do (II). Highly doped zones (IV) of the first conductivity type are formed in the epitaxial layer as base of the vertical and collector and part of the emitter, extending to the surface of the epitaxial layer, of the lateral transistor. Finally, a highly doped emitter (V) of the second conductivity type is formed in the base of the vertical transistor. The injection of charge carriers through the emitter is increased selectively in the area between the emitter and collector of the lateral transistor. This is achieved without the use of additional process stages. At the same time, the vertical part of the emitter junction of the lateral transistor can be extended, so that a further increase in the amplification factor of this transistor can be produced. Pref. the first conductivity type is the p-type, the buried zones are doped with As and the zone acting as part of the emitter with B.

公开(公告)号：DE2545871A1

公开(公告)日：1976-06-10

申请号：DE2545871

申请日：1975-10-14

Applicant: IBM

Inventor： ANTIPOV IGOR ,  JADUS DALE KEITH

IPC: H01L29/78 ,  H01L21/8247 ,  H01L29/00 ,  H01L29/76 ,  H01L29/788 ,  H01L29/792 ,  H01L21/18 ,  H01L21/225

公开(公告)号：DE2520047A1

公开(公告)日：1975-12-04

申请号：DE2520047

申请日：1975-05-06

Applicant: IBM

Inventor： ANTIPOV IGOR

IPC: H01L21/32 ,  H01L29/00 ,  H01L21/18 ,  H01L29/78

Abstract: A safety clamping device for use by climbers mounted in an elongated slot in a support rail, alternately to slide or grip the sides of the slot in clamping engagement. The clamping means preferably comprises opposed spaced apart wedges carried by a trigger arm above and below the slot in normal sliding movement with the climber, the wedges being actuated into clamping engagement, with the walls of the slot by quick angular pull of the trigger arm by the climber.