公开(公告)号：GB2502311A

公开(公告)日：2013-11-27

申请号：GB201209080

申请日：2012-05-24

Applicant: IBM ,  EGYPT NANOTECHNOLOGY CT EGNC

Inventor： KHOMYAKOV PETR ,  CURIONI ALESSANDRO ,  ANDREONI WANDA ,  KIM JEEHWAN ,  SADANA DEVENDRA K ,  AFIFY NASSER D

IPC: H01L31/04

Abstract: A photovoltaic solar cell device comprises an amorphous semiconductor light absorbing material (Fig. 2; 34, 35), in particular a thin film hydrogenated amorphous silicon (a-Si:H) material; and a band-stop filter structure (Fig. 2; 20) with a given stop band, the structure arranged to attenuate electromagnetic radiation reaching the light absorbing material and having angular frequencies w* within the stop band such that w min

公开(公告)号：GB2351974B

公开(公告)日：2003-09-10

申请号：GB0016088

申请日：2000-07-03

Applicant: IBM

Inventor： ANDREONI WANDA ,  CURIONI ALESSANDRO

IPC: C07D215/30 ,  C07F5/06 ,  H01L51/50 ,  C09K11/06 ,  H01L51/30

Abstract: A material is provided that can be used for a light-emitting device. The base unit of said material is tris(8-quinolinolato)aluminum(III) (Alq3). This Alq3 is substituted in the said 3- or 4-position with an electron-donor group and simultaneously in the said 5-position with an electro-acceptor or p-delocalizing group. Using this material as an emitting luminescent layer, the efficiency of the intrinsic luminescence can be greatly enhanced.