公开(公告)号：JP2005142176A

公开(公告)日：2005-06-02

申请号：JP2003183509

申请日：2003-06-26

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： ANDREONI WANDA ,  CURIONI ALESSANDRO ,  SHEVLIN STEPHEN A

IPC: C04B35/44 ,  C23C14/08 ,  C30B23/02 ,  H01B3/12 ,  H01L21/28 ,  H01L21/316 ,  H01L21/822 ,  H01L27/04 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/517 ,  C23C14/08 ,  C30B23/02 ,  C30B29/22 ,  H01L21/28167 ,  H01L21/31604 ,  H01L21/31616

Abstract: PROBLEM TO BE SOLVED: To provide a member including a substrate and a layer of N
(X) Y
(1-X) AlO
3 thereon.
SOLUTION: X is a molar fraction of 0

Abstract translation: 要解决的问题：为了提供一种包括基材和N（SB）（X-1）X-1（X-1）X 1 SiO 2的层的构件， SB>其上。 解决方案：X是0

公开(公告)号：JP2001081454A

公开(公告)日：2001-03-27

申请号：JP2000209318

申请日：2000-07-11

Applicant: IBM

Inventor： ANDREONI WANDA ,  CURIONI ALESSANDRO

IPC: H01L51/50 ,  C07D215/30 ,  C07F5/06 ,  C09K11/06 ,  H01L51/30 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To obtain an organic material which exhibits an increased intrinsic luminescence of organic molecular unit by substituting a plurality of specific positions of a base unit comprising tris(8-quinolinlato)aluminum (111) are substituted with electron-donating groups and simultaneously by substituting a specified position of the unit with an electron-accepting group or a p- nonlocalized group. SOLUTION: This organic material comprises units each of which is formed by substituting the 3-and 4-positions of tris(8-quilinolinolato)aluminum (111) with electron-donating groups and simultaneously by substituting the 5-position with an electron-accepting groups. The electron-donating group is selected from among -R'R"R''', -NR2, and OR. The electron-accepting group or the p- nonlocalized group is selected from among -CX3, -CX2-CX3, -SO3R, -CR=CR2, -CX=CX2, and-COOM. A preferable electron-donating group is -CH3; and a preferable electron-accepting group is -CF=CF2. In the formulas, R, R', and R" are each H or alkyl; R''' is alkyl; X is F, Cl or Br; and M is a metal ion.

公开(公告)号：GB2516599A

公开(公告)日：2015-01-28

申请号：GB201421348

申请日：2013-04-29

Applicant: IBM ,  EGYPT NANOTECHNOLOGY CT EGNC

Inventor： AFIFY NASER D ,  ANDREONI WANDA ,  CURIONI ALESSANDRO ,  KHOMYAKOV PETR ,  KIM JEE HWAN ,  SADANA DEVENDRA K

IPC: H01L31/0216 ,  H01L31/0376

Abstract: A photovoltaic device (10a-e) is disclosed, comprising: a light absorbing material (34, 35) being an amorphous semiconductor material; and a band-stop filter structure (20) with a given stopband, the structure arranged with respect to the light absorbing material to attenuate electromagnetic radiation reaching the light absorbing material and having angular frequencies ω * within the stopband, wherein the stopband corresponds to electronic excitations h ω * from valence band tail (VBT) states of the amorphous material to conduction band tail (CBT) states of the amorphous material.

公开(公告)号：GB2516599B

公开(公告)日：2015-11-18

申请号：GB201421348

申请日：2013-04-29

Applicant: IBM ,  EGYPT NANOTECHNOLOGY CT EGNC

Inventor： AFIFY NASER D ,  ANDREONI WANDA ,  CURIONI ALESSANDRO ,  KHOMYAKOV PETR ,  KIM JEE HWAN ,  SADANA DEVENDRA K

IPC: H01L31/0216 ,  H01L31/0376

公开(公告)号：GB2502311A

公开(公告)日：2013-11-27

申请号：GB201209080

申请日：2012-05-24

Applicant: IBM ,  EGYPT NANOTECHNOLOGY CT EGNC

Inventor： KHOMYAKOV PETR ,  CURIONI ALESSANDRO ,  ANDREONI WANDA ,  KIM JEEHWAN ,  SADANA DEVENDRA K ,  AFIFY NASSER D

IPC: H01L31/04

Abstract: A photovoltaic solar cell device comprises an amorphous semiconductor light absorbing material (Fig. 2; 34, 35), in particular a thin film hydrogenated amorphous silicon (a-Si:H) material; and a band-stop filter structure (Fig. 2; 20) with a given stop band, the structure arranged to attenuate electromagnetic radiation reaching the light absorbing material and having angular frequencies w* within the stop band such that w min

公开(公告)号：GB2351974B

公开(公告)日：2003-09-10

申请号：GB0016088

申请日：2000-07-03

Applicant: IBM

Inventor： ANDREONI WANDA ,  CURIONI ALESSANDRO

IPC: C07D215/30 ,  C07F5/06 ,  H01L51/50 ,  C09K11/06 ,  H01L51/30

Abstract: A material is provided that can be used for a light-emitting device. The base unit of said material is tris(8-quinolinolato)aluminum(III) (Alq3). This Alq3 is substituted in the said 3- or 4-position with an electron-donor group and simultaneously in the said 5-position with an electro-acceptor or p-delocalizing group. Using this material as an emitting luminescent layer, the efficiency of the intrinsic luminescence can be greatly enhanced.

公开(公告)号：DE112013001688B4

公开(公告)日：2019-05-16

申请号：DE112013001688

申请日：2013-04-29

Applicant: EGYPT NANOTECHNOLOGY CENTER EGNC ,  IBM

Inventor： AFIFY NASSER D ,  ANDREONI WANDA ,  CURIONI ALESSANDRO ,  KHOMYAKOV PETR ,  KIM JEE HWAN ,  SADANA DEVENDRA K

IPC: H01L31/0376

Abstract: Photovoltaikeinheit (10a bis 10e), aufweisend:• ein amorphes Photovoltaikmaterial (34) und• eine Bandstoppfilterstruktur (20), welche ein gegebenes Stoppband aufweist, welches sich von einer unteren begrenzenden Winkelfrequenz ω≥ 0 bis zu einer oberen begrenzenden Winkelfrequenz ωerstreckt, wobei ω> ωund wobei die Filterstruktur in der Einheit in Bezug auf das Photovoltaikmaterial so eingerichtet ist, dass elektromagnetische Strahlungen gedämpft werden, die das Photovoltaikmaterial mit Winkelfrequenzen ω* innerhalb des Stoppbands erreichen, so dass ω

公开(公告)号：DE112013001688T5

公开(公告)日：2014-12-11

申请号：DE112013001688

申请日：2013-04-29

Applicant: EGYPT NANOTECHNOLOGY CT EGNC ,  IBM

Inventor： CURIONI ALESSANDRO ,  KHOMYAKOV PETR ,  KIM JEE HWAN ,  AFIFY NASSER D ,  ANDREONI WANDA ,  SADANA DEVENDRA K

IPC: H01L31/0376

Abstract: Es wird eine Photovoltaikeinheit (10a bis 10e) offenbart, aufweisend: ein lichtabsorbierendes Material (34, 35), welches ein amorphes Halbleitermaterial ist; und eine Bandstoppfilterstruktur (20) mit einem gegebenen Stoppband, wobei die Struktur in Bezug auf das lichtabsorbierende Material so eingerichtet ist, dass elektromagnetische Strahlung gedämpft wird, die das lichtabsorbierende Material erreicht und Winkelfrequenzen ω* innerhalb des Stoppbands aufweist, wobei das Stoppband elektronischen Anregungen ħω* aus Valenzbandrand(VBT)-Zuständen des amorphen Materials in Leitungsbandrand(CBT)-Zustände des amorphen Materials entspricht.

公开(公告)号：GB2351974A

公开(公告)日：2001-01-17

申请号：GB0016088

申请日：2000-07-03

Applicant: IBM

Inventor： ANDREONI WANDA ,  CURIONI ALESSANDRO

IPC: C07D215/30 ,  C07F5/06 ,  C09K11/06 ,  H01L51/50 ,  H01L51/30

Abstract: The invention relates to tris(8-quinolinolato)aluminum(III) (Alq 3 ) . This Alq 3 is substituted in the 3- or 4- position with an electron-donor group and simultaneously in the 5-position with an electron-acceptor or p-delocalizing group. Using this material as an emitting luminescent layer, the efficiency of the intrinsic luminescense can be greatly enhanced.