公开(公告)号：CA1010401A

公开(公告)日：1977-05-17

申请号：CA163468

申请日：1973-02-08

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  HEWETT WILLIAM A ,  LEVINE HAROLD A

IPC: C08F2/00 ,  C08F2/48 ,  C23F1/00 ,  G03F7/039 ,  H01L21/00 ,  H01L21/027 ,  H01L23/29 ,  H05K3/00

Abstract: Patterns, such as etch resistant resists, masks, are formed by degradation of a t-butyl methacrylate polymer coating, or film, under an electron beam in a predetermined pattern, followed by removal with a solvent, of the electron degraded product in the exposed areas.

公开(公告)号：CA846198A

公开(公告)日：1970-07-07

申请号：CA846198D

Applicant: IBM

Inventor： HEWETT WILLIAM A ,  MICHAELSEN JOHN D ,  SCHIMSCHEIMER JAN F

公开(公告)号：CA848454A

公开(公告)日：1970-08-04

申请号：CA848454D

Applicant: IBM

Inventor： SCHIMSCHEIMER JAN F ,  MICHAELSEN JOHN D ,  HEWETT WILLIAM A

公开(公告)号：CA1041347A

公开(公告)日：1978-10-31

申请号：CA224581

申请日：1975-04-11

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  HEWETT WILLIAM A

IPC: H01L21/027 ,  C08G75/00 ,  C08G75/22 ,  G03F7/039 ,  G03C1/495

Abstract: TERPOLYMERS FOR ELECTRON BEAM POSITIVE RESISTS Electron beam positive resists are formed from terpolymers of (a) an alpha olefin, (b) sulfur dioxide, and (c) a compound selected from the group consisting of cyclopentene, bicycloheptene and methyl methacrylate. The terpolymers have the particular unexpected advantage of being resistant to cracking of the films.

公开(公告)号：CA966344A

公开(公告)日：1975-04-22

申请号：CA155732

申请日：1972-10-31

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  HEWETT WILLIAM A

公开(公告)号：CA879174A

公开(公告)日：1971-08-24

申请号：CA879174D

Applicant: IBM

Inventor： HEWETT WILLIAM A ,  GIPSTEIN EDWARD

公开(公告)号：CA804093A

公开(公告)日：1969-01-14

申请号：CA804093D

Applicant: IBM

Inventor： HEWETT WILLIAM A

公开(公告)号：CA766227A

公开(公告)日：1967-08-29

申请号：CA766227D

Applicant: IBM

Inventor： HEWETT WILLIAM A