公开(公告)号：US3916036A

公开(公告)日：1975-10-28

申请号：US50959574

申请日：1974-09-26

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE M ,  NEED III OMAR U

IPC: G03F7/039 ,  B05D3/06

CPC classification number: G03F7/039 ,  Y10S430/126 ,  Y10S430/143

Abstract: Polysulfone resists are made more sensitive to decomposition by electron beam radiation and also made sensitive to radiation of light in the 3,000 to 5,000 A region by the addition of sensitizers which are either energy transfer agents or sources of free radicals.

公开(公告)号：US3898350A

公开(公告)日：1975-08-05

申请号：US48358974

申请日：1974-06-27

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  HEWETT WILLIAM AINSLIE

IPC: H01L21/027 ,  C08G75/00 ,  C08G75/22 ,  G03F7/039 ,  B05D3/06

CPC classification number: G03F7/039 ,  C08G75/22 ,  Y10S430/143

Abstract: Electron beam positive resists are formed from terpolymers of (a) an alpha olefin, (b) sulfur dioxide, and (c) a compound selected from the group consisting of cyclopentene, bicycloheptene and methyl methacrylate. The terpolymers have the particular unexpected advantage of being resistant to cracking of the films.

Abstract translation: 电子束正性抗蚀剂由（a）α-烯烃，（b）二氧化硫和（c）选自环戊烯，双环庚烯和甲基丙烯酸甲酯的化合物的三元共聚物形成。 三元共聚物具有耐薄膜破裂的特别意想不到的优点。

公开(公告)号：US3615384A

公开(公告)日：1971-10-26

申请号：US3615384D

申请日：1970-06-29

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  HEWETT WILLIAM A

IPC: C08F8/00 ,  C08F28/06 ,  G03G5/07 ,  G03G5/00 ,  C08F15/00 ,  H01L13/00

CPC classification number: G03G5/071 ,  C08F8/00 ,  C08F28/06 ,  Y10S430/10 ,  C08F28/00

Abstract: Photoconductors comprising vinyl bithiophene polymers and their use in electrophotographic processes.

公开(公告)号：US3554741A

公开(公告)日：1971-01-12

申请号：US3554741D

申请日：1968-04-08

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  HEWETT WILLIAM A

IPC: C08F24/00 ,  C08F26/06 ,  C08F28/06 ,  G03G5/07 ,  G03G

CPC classification number: G03G5/071 ,  C08F24/00 ,  C08F26/06 ,  C08F28/06

Abstract: POLYMERIC PHOTOCONDUCTORS OF N-VINYLINDOLE, BOTH UNSUBSTITUTED AND SUBSTITUTED, COPOLYMERIZED THROUGH ITS VINYL SUBSTITUENT WITH A COREPEATING UNIT HAVING THE STRUCTURAL FORMULA:

-C
WHEREIN R'' IS A FUSED RING RADICAL. EXAMPLES OF THESE COPOLYMERS ARE N-VINYLINDOLE-INDOLE COPOLYMER, N-VINYLINDOLE N-METHYLINDOLE COPOLYMER, N-VINYLINDOLE-INDENE COPOLYMER, N-VINYLLINDOLE-COUMARIN COPOLYMER, AND NVINYLINDOLE-MALEIC ANHYDRIDE COPOLYMER.

公开(公告)号：AU1797876A

公开(公告)日：1978-04-06

申请号：AU1797876

申请日：1976-09-21

Applicant: IBM

Inventor： BARGON JOACHIM ,  GIPSTEIN EDWARD ,  HIRAOKA HIROYUKI

IPC: G03F7/038 ,  C08F8/32 ,  G03F7/039 ,  H01L21/027 ,  G03C1/72 ,  C08F8/30 ,  C08J7/12

Abstract: A process for forming an image with a positive resist using a polymer containing dimethylglutarimide units. The polymer is sensitive to both electron beam and light radiation, has a high glass transition temperature, a high temperature resistance, and is capable of very fine spatial resolution, very suitable for micro circuitry processings.

公开(公告)号：DE2536299A1

公开(公告)日：1976-04-08

申请号：DE2536299

申请日：1975-08-14

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED III OMAR U

IPC: H05K3/00 ,  G03F7/039 ,  H01L21/027 ,  G03F7/10 ,  G03F1/00

公开(公告)号：CA1010401A

公开(公告)日：1977-05-17

申请号：CA163468

申请日：1973-02-08

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  HEWETT WILLIAM A ,  LEVINE HAROLD A

IPC: C08F2/00 ,  C08F2/48 ,  C23F1/00 ,  G03F7/039 ,  H01L21/00 ,  H01L21/027 ,  H01L23/29 ,  H05K3/00

Abstract: Patterns, such as etch resistant resists, masks, are formed by degradation of a t-butyl methacrylate polymer coating, or film, under an electron beam in a predetermined pattern, followed by removal with a solvent, of the electron degraded product in the exposed areas.

公开(公告)号：DE2602825A1

公开(公告)日：1976-08-05

申请号：DE2602825

申请日：1976-01-27

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  NEED III OMAR U ,  MOREAU WAYNE MARTIN

IPC: H01L21/027 ,  B41C1/00 ,  C08J3/28 ,  G03F7/039 ,  G03F7/10

Abstract: 1515330 Electron sensitive polymers INTERNATIONAL BUSINESS MACHINES CORP 5 Dec 1975 [29 Jan 1975] 49960/75 Heading G2C Positive resist masks are formed by exposing a supported film of a non-crosslinked polymeric material to electron beam radiation in a predetermined pattern so as to degrade the polymeric material in the exposed areas, and removing the degraded products in the exposed areas. The polymeric material used is selected from (1) polyalkyl methacrylates and copolymers of alkyl methacrylates with halogen - or cyano - containing monomers and (2) post halogenated derivatives of the polymers in (1). The coated polymers may be baked prior to exposure and also after development.

公开(公告)号：DE2552582A1

公开(公告)日：1976-07-01

申请号：DE2552582

申请日：1975-11-24

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED III OMAR U

IPC: H05K3/00 ,  G03F7/039 ,  H01L21/027 ,  G03F7/10

Abstract: Very sensitive electron beam positive resists have been obtained using films of polymeric methyl methacrylate containing acetate polymers.

公开(公告)号：DE2536300A1

公开(公告)日：1976-04-08

申请号：DE2536300

申请日：1975-08-14

Applicant: IBM

Inventor： GIPSTEIN EDWARD ,  MOREAU WAYNE MARTIN ,  NEED III OMAR U

IPC: G03F7/039 ,  G03F7/10 ,  G03F1/00

Abstract: 1500403 Sensitized olefin-sulphone polymers INTERNATIONAL BUSINESS MACHINES CORP 21 May 1975 [26 Sept 1974] 21838/75 Addition to 1421805 Heading G2C A radiation sensitive positive resist comprises an olefin-sulphone polymer sensitized by a charge transfer agent or a free radical source. The polymer is preferably poly (hexene-1-sulphone) and sensitizers include azulene, 2, 4, 7-trinitrofluorenone, fluorene, diphenylamine, p-nitroaniline, CCl4, CBr4, Cl4, phenyl disulphide, azobenzene, and poly(alpha-chloromethylacrylate). The resist is degraded on exposure to U.V., visible light, x-rays, gamma radiation and low energy electron beams of from 10 to 30 KeV. The exposed areas of the polymer are removed using a solvent such as 1,4- dichlorobutane.