16.
    发明专利
    未知

    公开(公告)号:DE3780977T2

    公开(公告)日:1993-03-11

    申请号:DE3780977

    申请日:1987-01-02

    Applicant: IBM

    Abstract: The calibration of a force sensing type data input device through the use of at least one correction developed by minimization of differences between an actual location of a pattern of test forces and a calculated location of the test forces where the calculation is on the basis of the effect of the test forces on the equilibrium of the device.

    19.
    发明专利
    未知

    公开(公告)号:DE2825993A1

    公开(公告)日:1979-01-18

    申请号:DE2825993

    申请日:1978-06-14

    Applicant: IBM

    Abstract: A display system includes an oscillating mirror for deflecting modulated optical energy. The system includes apparatus for indicating when the mirror has reached its travel end point in both directions. Images are written during mirror travel in one direction between said end points, and synchronizing apparatus is provided to allow an image to be written during mirror travel in a direction opposite said one direction in such a fashion that the images written during both directions of mirror travel are superimposed on each other. Apparatus is provided to measure the time elapsed between cessation of writing during mirror travel in one direction, and the time the mirror reaches the end point of its travel in that direction. A second time period is measured out, beginning from the time the mirror reaches its travel end point, and production of modulated optical energy is allowed to proceed at the completion of the second time period which is made equal to the measured first time period. Digital and analog embodiments are disclosed.

    20.
    发明专利
    未知

    公开(公告)号:DE2727751A1

    公开(公告)日:1978-01-05

    申请号:DE2727751

    申请日:1977-06-21

    Applicant: IBM

    Abstract: A deformographic membrane display system in which a semiconductor substrate, for example silicon, has an insulating layer such as SiO2 formed thereon with an array of holes formed in the insulating layer. Alternatively, the insulating layer may be omitted, with the holes being formed in the substrate. A reflective membrane, including a thin metal layer, is formed over the surface in which the holes are formed. Electrodes are formed in the silicon substrate directly beneath or in each of the holes. Control circuitry, which for example, may be formed utilizing metal oxide semiconductor field effect transistor (MOSFET) technology and/or bipolar technology, is formed in the silicon substrate for selectively energizing the electrodes. The portion of the membrane over a given hole is deformed in response to the electrode thereunder being energized by the control circuitry.

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