公开(公告)号：IT1149289B

公开(公告)日：1986-12-03

申请号：IT1961480

申请日：1980-02-01

Applicant: IBM

Inventor： MARINACE JOHN CARTER

IPC: C30B25/18 ,  C30B29/40 ,  G01D15/18 ,  H01L21/20 ,  H01L21/205 ,  H01L23/473 ,  H01L27/14 ,  H01L29/04 ,  H01L29/06 ,  H01L31/00 ,  H01L31/0264 ,  H01L33/20

Abstract: Epitaxial tunnels may be formed in crystalline bodies of crystalline materials by growth of the material on a substrate having two intersecting crystallographic planes that exhibit rapid epitaxial growth and by maintaining the growth until the structure forming along those planes closes, thereby producing a tunnel. P-n junction structures can be made in semiconductor devices by appropriate techniques.

公开(公告)号：DE3365450D1

公开(公告)日：1986-09-25

申请号：DE3365450

申请日：1983-08-17

Applicant: IBM

Inventor： MARINACE JOHN CARTER

IPC: C01B31/36 ,  C23C16/32 ,  C30B25/02 ,  H01B1/04 ,  H01C17/14 ,  H01C17/20

Abstract: Silicon carbide material retains the hardness, wear and resistance properties and can be rendered electrically conductive by the incorporation of germanium in the range 0.01 to 0.03 percent therein. The material is very hard, is electrically conductive in the 2x10 4 Ωcm range and is useful in highly corrosive and abrasive applications. A process for producing said material by pyrolytically dissociating an organic silicon and carbon bearing gas like triethylsilane and tetraethylgermanium over a substrate taken from the group of quartz, sapphire, ceramic alumina, silicon carbide, gallium arsenide and metals melting above 800°C, is also described.

公开(公告)号：DE2965838D1

公开(公告)日：1983-08-18

申请号：DE2965838

申请日：1979-05-03

Applicant: IBM

Inventor： MARINACE JOHN CARTER ,  WILKIE EARL LAWRENCE

IPC: C01G17/00 ,  C09K11/02 ,  C30B25/02 ,  C30B25/14 ,  C30B29/40 ,  H01L21/205 ,  H01L33/00

公开(公告)号：DE2325598A1

公开(公告)日：1974-01-10

申请号：DE2325598

申请日：1973-05-19

Applicant: IBM

Inventor： MARINACE JOHN CARTER

IPC: G03F1/58 ,  G03F1/00

Abstract: A durable "see-through" photoresist mask is obtained by forming a layer of ruby on a sapphire substrate, and forming a layer of Cr2O3 on the ruby. This combination of materials acts to effectively absorb light over the sensitive range of approximately 3,000 to 4,500 A, and yet allows transmission of sufficient light in the visible range to permit visual alignment and positioning of the mask. The mask is fabricated, in one mode, by depositing a layer of Cr2O3 + Cr on a layer of sapphire and heating in an inert atmosphere to diffuse Cr into the sapphire and create a layer of ruby intermediate a layer of sapphire and Cr2O3.