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    3.
    发明专利
    未知

    公开(公告)号：DE1194062B

    公开(公告)日：1965-06-03

    申请号：DEJ0023660

    申请日：1963-05-07

    Applicant: IBM

    Inventor： MARINACE JOHN CARTER

    IPC: C30B25/02 ,  H01L21/00 ,  H01L21/205 ,  H01L27/082 ,  H01L29/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/36 ,  H01L29/73

    Abstract: A process for producing a vapour-grown semi-conductor structure including a plurality of layers having a gradient of impurity concentration therein, includes the steps of simultaneously reacting in a first zone of a reaction chamber a halogen transport element with both a source of semi-conductor material and at least two sources of impurities of opposite conductivity type having different degrees of bonding with the halogen, whereby vapours of compounds of the halogen with the semi-conductor material and with the impurities are formed and establishing a temperature gradient between the first zone and a second zone in which a substrate of semi-conductive material is disposed, the temperature gradient being such that the vapours produced by the first step pass into the second zone and are there decomposed to be epitaxially deposited on the substrate, whereby the initially-grown layer of semi-conductor material on the substrate is of a conductivity-type determined by the conductivity type of the impurity which is less strongly bonded to the halogen. Thus n-type material may first be deposited followed by p-type material or i-type material wherein p-type and n-type impurity concentrations exactly correspond. As shown in Fig. 1, sources of iodine 4, Ge doped with Ga 5, and Ge doped with Sb 6 in a container 1 are heated in a first zone by windings 3a to 500 DEG C. and the resultant halide vapours 9 pass to a second zone heated by windings 3b to 380 DEG C. where deposition occurs on a substrate of semi-conductor material, n-type material being deposited initially. Instead of separate sources 5 and 6, a single source of compensated material may be used. Possible structures that can be built up are illustrated in Figs. 3A-3D (not shown) (see Division H1). In one of the structures, part of the vapour-grown layers is etched away to produce a mesa contour. Specification 916,887 is referred to.

    6.
    发明专利
    未知

    公开(公告)号：DE1222165B

    公开(公告)日：1966-08-04

    申请号：DEJ0024619

    申请日：1963-10-24

    Applicant: IBM

    Inventor： MARINACE JOHN CARTER

    IPC: G02F1/015

    9.
    发明专利
    未知

    公开(公告)号：DE1222586B

    公开(公告)日：1966-08-11

    申请号：DEJ0019553

    申请日：1961-03-09

    Applicant: IBM

    Inventor： MARINACE JOHN CARTER ,  RUTZ RICHARD FREDERICK

    IPC: C22B41/00 ,  C23C16/46 ,  C25F3/12 ,  C30B25/02 ,  H01L21/00 ,  H01L21/205 ,  H01L29/00

    Abstract: A tunnel diode is formed by epitaxially depositing, in a closed container, a layer of semi-conductor of one conductivity type on a substrate of the opposite conductivity type by vapour deposition from a gaseous compound of the semi-conductor element and a transport element as in the parent Specification, the resulting junction being heat treated, either before, or during, the alloying of ohmic contacts thereto, to increase the ratio of peak to valley currents of the current voltage characteristic of the diode. In examples, germanium is deposited on germanium or gallium arsenide bodies which are then heat treated for 20 seconds-10 minutes at 665 DEG C.

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