11.
    发明专利
    未知

    公开(公告)号:IT1229172B

    公开(公告)日:1991-07-22

    申请号:IT2008789

    申请日:1989-04-10

    Applicant: AVX CORP IBM

    Abstract: A method of forming successive metal layers of varying widths on a substrate is disclosed. A mask having a through going aperture is provided, the mask including a constricted neck portion between its upper and lower surfaces. Successive metal layers are applied over the substrate through the aperture in the mask sequentially by sputtering methods which form a metallic layer wider than the constricted neck portion of the mask and by vapor deposition method which forms a narrower metal layer corresponding to the transverse dimension of the constricted portion of the mask.

    12.
    发明专利
    未知

    公开(公告)号:FR2633453A1

    公开(公告)日:1989-12-29

    申请号:FR8901552

    申请日:1989-02-07

    Applicant: AVX CORP IBM

    Abstract: A method of forming successive metal layers of varying widths on a substrate is disclosed. A mask having a through going aperture is provided, the mask including a constricted neck portion between its upper and lower surfaces. Successive metal layers are applied over the substrate through the aperture in the mask sequentially by sputtering methods which form a metallic layer wider than the constricted neck portion of the mask and by vapor deposition method which forms a narrower metal layer corresponding to the transverse dimension of the constricted portion of the mask.

    METHOD OF FORMING CONDUCTORS
    14.
    发明专利

    公开(公告)号:GB2220108B

    公开(公告)日:1992-12-09

    申请号:GB8902168

    申请日:1989-02-01

    Applicant: AVX CORP IBM

    Abstract: A method of forming successive metal layers of varying widths on a substrate is disclosed. A mask having a through going aperture is provided, the mask including a constricted neck portion between its upper and lower surfaces. Successive metal layers are applied over the substrate through the aperture in the mask sequentially by sputtering methods which form a metallic layer wider than the constricted neck portion of the mask and by vapor deposition method which forms a narrower metal layer corresponding to the transverse dimension of the constricted portion of the mask.

Patent Agency Ranking