公开(公告)号：DE2430126A1

公开(公告)日：1975-01-16

申请号：DE2430126

申请日：1974-06-22

Applicant: IBM

Inventor： PLESHKO PETER

IPC: H03K19/08 ,  H03K17/567 ,  H03K17/60

Abstract: A MOSFET-bipolar switching circuit is disclosed which exhibits the characteristics of impedance mismatch between input and output, simple biasing requirements, high speed, and low standby power. In one embodiment, an N channel MOSFET is connected to provide a shunt feedback path from the collector to the base of an NPN bipolar transistor. A similar circuit results in the combination of a PNP bipolar transistor and a P channel MOSFET. In another embodiment, a pair of complementary MOSFET's are employed to drive a pair of complementary bipolar transistors. The circuit can be used either as a driver or for logic and may be fabricated in high density, integrated circuits.

公开(公告)号：DE1537176A1

公开(公告)日：1969-10-16

申请号：DE1537176

申请日：1967-09-23

Applicant: IBM

Inventor： PLESHKO PETER

IPC: H03K19/096 ,  H03K19/08