Mosbip switching circuit
    1.
    发明授权
    Mosbip switching circuit 失效
    Mosbip切换电路

    公开(公告)号:US3879619A

    公开(公告)日:1975-04-22

    申请号:US37384373

    申请日:1973-06-26

    Applicant: IBM

    Inventor: PLESHKO PETER

    CPC classification number: H03K17/567

    Abstract: A MOSFET-bipolar switching circuit is disclosed which exhibits the characteristics of impedance mismatch between input and output, simple biasing requirements, high speed, and low standby power. In one embodiment, an N channel MOSFET is connected to provide a shunt feedback path from the collector to the base of an NPN bipolar transistor. A similar circuit results in the combination of a PNP bipolar transistor and a P channel MOSFET. In another embodiment, a pair of complementary MOSFET''s are employed to drive a pair of complementary bipolar transistors. The circuit can be used either as a driver or for logic and may be fabricated in high density, integrated circuits.

    Abstract translation: 公开了一种MOSFET双极开关电路,其表现出输入和输出之间的阻抗失配特性,简单的偏置要求,高速度和低待机功率。 在一个实施例中,N沟道MOSFET被连接以提供从集电极到NPN双极晶体管的基极的并联反馈路径。 类似的电路导致PNP双极晶体管和P沟道MOSFET的组合。 在另一个实施例中,采用一对互补MOSFET来驱动一对互补双极晶体管。 该电路可以用作驱动器或逻辑电路,并且可以用高密度集成电路制造。

    Apparatus for stabilizing field effect transistor thresholds
    3.
    发明授权
    Apparatus for stabilizing field effect transistor thresholds 失效
    用于稳定场效应晶体管阈值的装置

    公开(公告)号:US3609414A

    公开(公告)日:1971-09-28

    申请号:US3609414D

    申请日:1968-08-20

    Applicant: IBM

    Abstract: Apparatus is disclosed which permits the adjustment and stabilization of field effect transistor threshold voltages so that the variation in threshold voltages due to fabrication nonuniformities are reduced to a minimum. This is accomplished by utilizing one of a plurality of field effect devices on a semiconductor chip as a sensor to detect changes in the characteristics of the devices, from whatever cause. A feedback circuit provides a signal which adjusts the voltage applied to the semiconductor chip or substrate and returns the threshold voltage to some nominal value. Several circuit arrangements are shown which accomplish the desired result. A plurality of chips each having a sensor and associated feedback circuitry is also disclosed indicating the environment in which the concept of the present invention is used most advantageously.

    Selection system for matrix displays requiring AC drive waveforms
    4.
    发明授权
    Selection system for matrix displays requiring AC drive waveforms 失效
    需要交流驱动波形的矩阵显示器选型系统

    公开(公告)号:US3911421A

    公开(公告)日:1975-10-07

    申请号:US42945973

    申请日:1973-12-28

    Applicant: IBM

    CPC classification number: H04N3/127

    Abstract: Alternating drive waveforms with zero direct voltage content for matrix or multiplexed displays are produced using low voltage, binary-level switching in the selection drive circuitry. Selection drive circuitry, and the breakdown voltage requirements thereof, are minimized by synthesizing the required high voltage waveforms applied to both the X and Y axes of display from lower amplitude components.

    Abstract translation: 在选择驱动电路中使用低电压二进制电平切换产生用于矩阵或多路复用显示器的零直流电压内容的交替驱动波形。 选择驱动电路及其击穿电压要求通过从低振幅分量合成施加到显示器的X和Y轴的所需高电压波形来最小化。

    7.
    发明专利
    未知

    公开(公告)号:DE2329009A1

    公开(公告)日:1974-01-17

    申请号:DE2329009

    申请日:1973-06-07

    Applicant: IBM

    Abstract: A circuit consisting of a pair of bistable resistors connected in series at a node to which current may be applied and from which current may be drawn and having a source of potential connected to each bistable resistor is disclosed. The bistable resistors are oriented physically in the same direction such that current in a given direction which exceeds a threshold and which switches the bistable resistors into a high resistance state can be characterized as the forward direction. Conversely, current in the opposite direction to the given direction which, when it exceeds a threshold, switches the devices from a high resistance state into a low resistance state can be characterized as the backward direction. With appropriately applied potentials to each of the bistable resistors, with one potential more positive than the other, current can be made to flow in the forward and backward directions. In the forward direction, both resistors are switched into or remain in a high resistance or RH state. When current flows in the backward direction through the pair of bistable resistors, they switch into or remain in the low resistance or RL state. By applying the same potentials to the bistable resistors and causing current to flow into or out of the node at which the bistable resistors are connected, it is possible to cause the pair of resistors to assume a low resistance high resistance state and, a high resistance low resistance state, respectively. Thus, by simply controlling the potentials and the direction of current flow through each of the pair of bistable resistors, four, non-volatile, stable states are achievable as opposed to a maximum of two volatile states in similarly arranged tunnel diode circuits, for example. Because the arrangements shown are inexpensive, easy to fabricate and permit high packing densities, circuits such as shift registers which utilize large numbers of similarly arranged logic circuits are most attractive. In addition, the nanosecond switching speeds available in bistable resistors make them superior to other known switching devices of slower switching speed. A shift register circuit incorporating three of the four non-volatile, stable states available with the logic circuits is also disclosed. The shift register utilizes a low resistance-high resistance state to represent a binary "one" and a high resistance-high resistance state and a high resistance-low resistance state to represent a binary "zero.

Patent Agency Ranking