BUBBLE LATTICE INITIALIZATION
    12.
    发明专利

    公开(公告)号:CA1048152A

    公开(公告)日:1979-02-06

    申请号:CA236292

    申请日:1975-09-18

    Applicant: IBM

    Abstract: BUBBLE LATTICE INITIALIZATION A method of providing an initial lattice containing magnetic bubble domains in a film is disclosed. The method includes a first step of providing a confinement area in a film to contain magnetic domains, a second step of applying an AC in-plane magnetic field to form a plurality of rows of substantially perfect parallel stripe domains, and a third step of cutting the stripe domains into bubbles to form a substantially perfect lattice containing bubble domains.

    COLUMN ACCESSING OF ELEMENTS IN CONFINED ARRAYS

    公开(公告)号:CA1048150A

    公开(公告)日:1979-02-06

    申请号:CA215070

    申请日:1974-12-02

    Applicant: IBM

    Abstract: COLUMN ACCESSING OF ELEMENTS IN CONFINED ARRAYS A technique for accessing interactive elements, such as magnetic bubble domains, which are in confined arrays where the elements are located with respect to one another in accordance with interactions therebetween. In order to improve the access time to any element within the confined array, means and method are provided for removing the elements in a direction substantially transverse to the direction of their translational movement within the confined array. In particular, this technique is useful for accessing columns of magnetic bubble domains in a lattice array of bubble domains. A bubble pump device is utilized to remove the interactive elements from the array. The bias field conditions for this pump propagation structure are the same as for the lattice. Bubble domains can be removed from the lattice and returned to their positions within the lattice.

    MAGNETIC BUBBLE DOMAIN SYSTEM HAVING IMPROVED OPERATING MARGINS

    公开(公告)号:CA1007370A

    公开(公告)日:1977-03-22

    申请号:CA166577

    申请日:1973-03-07

    Applicant: IBM

    Abstract: A structure for increasing the reliability of a magnetic bubble domain memory system in which the operating margins of various components within the system are enlarged so that the margins of the components will have a larger area of overlap. For components in which a lessening of the effect of the bias field Hz is desirable (splitters, generators, corner propagation elements, etc.), a thin layer of magnetically soft material (for instance, permalloy) is provided which extends over the area of the magnetic sheet in which the component function takes place. This thin layer is in addition to the overlay elements used to provide the function. In a memory system, selectively placed "thin patches" of permalloy or strips of permalloy are used in the critical component areas to improve operating margins of these components.

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