公开(公告)号：CA1071759A

公开(公告)日：1980-02-12

申请号：CA238108

申请日：1975-10-20

Applicant: IBM

Inventor： ALMASI GEORGE S ,  HENDEL ROBERT J ,  KEEFE GEORGE E ,  LIN YEONG S ,  MCGOUEY RICHARD P

IPC: G11C11/14 ,  G11C19/08 ,  H01F10/10 ,  H01F41/14 ,  H01F41/34

Abstract: METHOD FOR MAKING HIGH DENSITY MAGNETIC BUBBLE DOMAIN SYSTEM A method for making a high density magnetic bubble domain system including the functions of read, write, storage, transfer, and annihilation. Only three masking steps are required, of which only one requires critical alignment. The process makes use of the fact that magnetic disks can be placed on non ion implanted regions without adversely affecting the propagation properties of the implanted regions. Thus, the magnetic disks can be used to define ion implantation masks as well as for providing functions such as generation, propagation, reading, and annihilation. Magnetic elements for generation, storage and propagation, reading and annihilation are deposited in the same non-critical masking step, while all conductors used for writing, reading, and transfer are deposited by a single masking step requiring critical alignment.

公开(公告)号：CA964762A

公开(公告)日：1975-03-18

申请号：CA159094

申请日：1972-12-13

Applicant: IBM

Inventor： ALMASI GEORGE S ,  HENDEL ROBERT J ,  KEEFE GEORGE E

IPC: G11C11/14 ,  G01R33/12 ,  G11C19/08

公开(公告)号：FR2296911A1

公开(公告)日：1976-07-30

申请号：FR7536912

申请日：1975-11-28

Applicant: IBM

Inventor： ALMASI GEORGE S ,  HENDEL ROBERT J ,  KEEFE GEORGE E ,  LIN YEONG S ,  MCGOUEY RICHARD P

IPC: G11C11/14 ,  G11C19/08 ,  H01F10/10 ,  H01F41/14 ,  H01F41/34

Abstract: A method for making a high density magnetic bubble domain system including the functions of read, write, storage, transfer, and annihilation. Only three masking steps are required, of which only one requires critical alignment. The proces makes use of the fact that magnetic disks can be placed on non ion implanted regions without adversely affecting the propagation properties of the implanted regions. Thus, the magnetic disks can be used to define ion implantation masks as well as for providing functions such as generation, propagation, reading, and annihilation. Magnetic elements for generation, storage and propagation, reading and annihilation are deposited in the same non-critical masking step, while all condutors used for writing, reading, and transfer are deposited by a single masking step requiring critical alignment.

公开(公告)号：CA1007370A

公开(公告)日：1977-03-22

申请号：CA166577

申请日：1973-03-07

Applicant: IBM

Inventor： HENDEL ROBERT J ,  JAMBA THEODORE F JR ,  KEEFE GEORGE E ,  ROSIER LAURENCE L

IPC: G11C11/14 ,  G11C19/08

Abstract: A structure for increasing the reliability of a magnetic bubble domain memory system in which the operating margins of various components within the system are enlarged so that the margins of the components will have a larger area of overlap. For components in which a lessening of the effect of the bias field Hz is desirable (splitters, generators, corner propagation elements, etc.), a thin layer of magnetically soft material (for instance, permalloy) is provided which extends over the area of the magnetic sheet in which the component function takes place. This thin layer is in addition to the overlay elements used to provide the function. In a memory system, selectively placed "thin patches" of permalloy or strips of permalloy are used in the critical component areas to improve operating margins of these components.