公开(公告)号：DE3585810D1

公开(公告)日：1992-05-14

申请号：DE3585810

申请日：1985-05-23

Applicant: IBM

Inventor： SCHEUERLEIN ROY EDWIN ,  LANGE RUSSELL CHARLES

IPC: H01L27/10 ,  G11C11/404 ,  G11C11/408 ,  G11C11/4097 ,  H01L21/82 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04 ,  H01L27/108

Abstract: A memory is provided which includes a semiconductor substrate having a diffusion region disposed therein, first, second, third and fourth storage capacitors, first, second, third and fourth switching or transfer devices for coupling the first, second, third and fourth storage capacitors, respectively, to the diffusion region, a common conductor connected to the diffusion region and means for selectively activating the switching devices. In a more specific aspect of this invention, a plurality of groups of the four storage capacitors are arranged so that each of these capacitors is selectively coupled to the common conductor. In another aspect of this invention, the storage capacitors of the plurality of groups are arranged in parallel rows with the common conductor arranged obliquely to the direction of the rows of storage capacitors.