公开(公告)号：CA981372A

公开(公告)日：1976-01-06

申请号：CA145126

申请日：1972-06-20

Applicant: IBM

Inventor： BRACK KARL ,  GOREY EDWARD F ,  SCHWUTTKE GUENTER H

IPC: H01L27/00 ,  H01L21/02 ,  H01L21/265 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12

Abstract: 1376526 Isolation in semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 1 Aug 1972 [6 Oct 1971] 35772/72 Heading H1K An area to form an isolated pocket in the semi-conductor body of an integrated circuit (or of a discrete device), is exposed via an apertured mask of molybdenum, tungsten, platinum, gold, silver, silicon dioxide, or silicon nitride to a beam of ions of the semiconductor itself. A discrete implanted layer is formed at some distance below the surface and has an amorphous form of very high resistivity. The body is remasked to expose only the area where sidewalls are needed and implantation is then continued at the previously used ion energy until amorphous sidewalls are formed which reach the surface. The semi-conductors quoted are silicon and germanium and the structures formed may be anealed for one hour at 550‹ or 400‹ C. respectively without alteration of the resistivity of the amorphous material.

公开(公告)号：IT1150028B

公开(公告)日：1986-12-10

申请号：IT2352680

申请日：1980-07-18

Applicant: IBM

Inventor： SCHWUTTKE GUENTER H ,  YANG KUEI HSIUNG

IPC: H01L21/268 ,  H01L21/322 ,  H01L

公开(公告)号：CA1068009A

公开(公告)日：1979-12-11

申请号：CA249502

申请日：1976-04-02

Applicant: IBM

Inventor： GOREY EDWARD F ,  SCHWUTTKE GUENTER H

IPC: G01N3/32 ,  H01L21/304 ,  H01L21/66

Abstract: Apparatus for acoustical stressing of semiconductor wafers is disclosed, utilizing a number of small tungsten balls which are bounced on the surface of the wafer to be stressed. The movement of the tungsten balls is effectuated by clamping a wafer at one end of a conduit, the other end being attached to a high intensity loudspeaker The loudspeaker is driven at resonant frequency of the clamped wafer and accordingly the tungsten balls bounce on the surface. This impact creates micro-cracks on the surface of the wafer and number and depth of these cracks can be controlled by power input and the number of tungsten balls utilized. Controlled stressing can thereby be accomplished both in terms of density of micro-cracks and location on the wafer. Impact sound stressing finds utilization in the study of semiconductor surfaces to determine effects of dislocations and micro-splite and in the evaluation of wafer polishing techniques. Structural changes in the original defect pattern due to oxidation can be studied ant a cause and effect relationship between damage and oxidation established. The study of surface characteristics affecting many semi-conductor phenomena such as effective lifetime, noise, and contact potentials can be made in a controlled manner. Modern wafer polishing methods such as the cupric ton or silicon dioxide technique and others can be evaluated in terms of effectiveness of damage removal. This invention is related to a United States Patent 4,018,626 entitled "Impact Sound Stressing for Semiconductor Devices by G.H. Sch?uttke and K.H. Yang, assigned to International Business Machines Corporation and issued April 19, 1977.