公开(公告)号：EP2522968A1

公开(公告)日：2012-11-14

申请号：EP12175335.4

申请日：2010-11-30

Applicant: IMEC

Inventor： Tack, Klaas ,  Lambrechts, Andy ,  Haspeslagh, Luc

IPC: G01J3/26 ,  G01J3/28 ,  G01J3/12

CPC classification number: G01J3/2823 ,  G01J3/12 ,  G01J3/26 ,  G01J3/2803 ,  G01J2003/1226 ,  G01J2003/265 ,  G01J2003/2806 ,  G01J2003/2826 ,  H04N5/332 ,  H04N5/378

Abstract: An integrated circuit for an imaging system has an array of optical sensors (40), and an array of optical filters (10) each configured to pass a band of wavelengths onto one or more of the sensors, the array of optical filters being integrated with the array of sensors, and the integrated circuit also having read out circuitry (30) to read out pixel values from the array of sensors to represent an image, different ones of the optical filters being configured to have a different thickness, to pass different bands of wavelengths by means of interference, to allow detection of a spectrum of wavelengths. The read out circuitry can enable multiple pixels under one optical filter to be read out in parallel. The thicknesses may vary non monotonically across the array. The read out, or later image processing, may involve selection or interpolation between wavelengths, to carry out spectral sampling or shifting, to compensate for thickness errors.

Abstract translation: 一种用于成像系统的集成电路具有光学传感器阵列（40）和每个被配置成将波长带传递到一个或多个传感器上的滤光器阵列（10），所述滤光器阵列与 所述传感器阵列和所述集成电路还具有读出电路（30），以从所述传感器阵列中读出像素值以表示图像，所述不同的所述滤光器被配置为具有不同的厚度以通过不同的带 的波长，以允许检测波长的光谱。 读出电路可以使一个光学滤波器下的多个像素平行读出。 厚度可以在整个阵列上单调变化。 读出或稍后的图像处理可能涉及波长之间的选择或插值，以进行频谱采样或移位，以补偿厚度误差。

公开(公告)号：EP2407418A2

公开(公告)日：2012-01-18

申请号：EP11005669.4

申请日：2011-07-12

Applicant: Imec VZW

Inventor： Guo, Bin ,  Haspeslagh, Luc

IPC: B81C1/00

CPC classification number: B81C1/00277 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/095

Abstract: A MEMS device 1 is disclosed comprising a cavity 5 containing a MEMS component 6, the cavity 5 being formed in a dielectric layer stack 3 having a thickness t d , whereby the cavity 5 and the dielectric layer stack 3 are sandwiched between a substrate 2 and a sealing dielectric layer 4 having a thickness t s , and whereby the MEMS component 6 is enclosed by at least one trench 8 extending over the thickness t d of the dielectric layer stack 3 and of the sealing dielectric t s .

Abstract translation: 一种MEMS设备1盘游离缺失包含含有微机电系统元件6的空腔5，空腔5被形成为具有厚度TD的电介质层堆叠体3，由此，空洞部5和电介质层堆3被夹在基片2和一个之间 密封电介质层4的厚度TS，并且其中所述MEMS部件6由至少一个沟槽8包围在电介质TS的介电层堆栈3和密封件的厚度TD延伸。

公开(公告)号：EP1693898A1

公开(公告)日：2006-08-23

申请号：EP05447039.8

申请日：2005-02-21

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC)

Inventor： Haspeslagh, Luc ,  Rosmeulen, Maarten

IPC: H01L29/786 ,  H01L27/12 ,  H01L21/336

CPC classification number: H01L27/108 ,  H01L27/10802 ,  H01L27/10805 ,  H01L27/10826 ,  H01L27/10844 ,  H01L27/10873 ,  H01L27/1203 ,  H01L29/42384 ,  H01L29/66787 ,  H01L29/7841 ,  H01L29/785

Abstract: The present invention is related to a device for storing charge comprising a body for storing charge therein and at least one connecting region connected to the body. The at least one connecting region is arranged for supplying charge to and from the body. The body and the at least one connecting region are made of a semiconductor material. At least one of the at least one connecting region has a cross-sectional area smaller than the cross-section of the charge storing body, said cross-sectional area being perpendicular to the charge supplying direction. Such a charge storing device is preferably a FinFET device.

Abstract translation: 本发明涉及一种用于存储电荷的装置，包括用于在其中存储电荷的主体和连接到主体的至少一个连接区域。 所述至少一个连接区域被布置用于向身体提供电荷和从身体提供电荷。 主体和至少一个连接区域由半导体材料制成。 所述至少一个连接区域中的至少一个具有比所述电荷存储体的横截面小的横截面积，所述横截面积垂直于所述电荷供给方向。 这样的电荷存储装置优选为FinFET装置。