Patent search ap:("INFINEON TECHNOLOGIES AG") AND inv:"STIFTINGER MARTIN" Page 2

11.

发明专利
Silicon on insulator high voltage transistor for Flash EPROM circuit has extension with doping profile which increases to a maximum from the surface of the semiconductor layer 未知

公开(公告)号：DE10241379A1

公开(公告)日：2004-03-18

申请号：DE10241379

申请日：2002-09-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TAKACS DEZSOE , STIFTINGER MARTIN

IPC: H01L27/105 , H01L27/115 , H01L27/12 , H01L29/78 , H01L29/786

Abstract: The transistor has an extension (6) in the direction of the surface (7) of the semiconductor body (3), perpendicular to the channel direction, exhibits an doping profile that increases in its depth from the surface of the semiconductor body before it reaching its maximum.

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