公开(公告)号：US20190115529A1

公开(公告)日：2019-04-18

申请号：US16085400

申请日：2016-03-18

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Ming LIU ,  Qing LUO ,  Xiaoxin XU ,  Hangbing LV ,  Shibing LONG ,  Qi LIU

IPC: H01L45/00 ,  H01L27/24 ,  H01L29/51 ,  G11C11/56

Abstract: A selector for a bipolar resistive random access memory and a method for fabricating the selector are provided. The method includes: providing a substrate; forming a lower electrode on the substrate, where the lower electrode is made of a metal, and the metal is made up of metal atoms which diffuse under an annealing condition of below 400° C.; forming a first metal oxide layer on the lower electrode; performing an annealing process on the first metal oxide layer to make the metal atoms in the lower electrode diffuse into the first metal oxide layer to form a first metal oxide layer doped with metal atoms; forming a second metal oxide layer on the first metal oxide layer doped with metal atoms; forming an upper electrode layer on the second metal oxide layer; and patterning the upper electrode layer to form an upper electrode.