CAPACITORS IN A GLASS SUBSTRATE
    11.
    发明申请

    公开(公告)号:US20220406523A1

    公开(公告)日:2022-12-22

    申请号:US17350164

    申请日:2021-06-17

    Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques related to creating capacitors at the interface of a glass substrate. These capacitors may be three-dimensional (3-D) capacitors formed using trenches within the glass core of the substrate using laser-assisted etching techniques. A first electrode may be formed on the glass, including on the surface of trenches or other features etched in the glass, followed by a deposition of a dielectric material or a capacitive material. A second electrode may then be formed on top of the dielectric material. Other embodiments may be described and/or claimed.

    ZERO-MISALIGNMENT TWO-VIA STRUCTURES

    公开(公告)号:US20220084931A1

    公开(公告)日:2022-03-17

    申请号:US17537406

    申请日:2021-11-29

    Abstract: A device package and a method of forming a device package are described. The device package includes an interposer with interconnects on an interconnect package layer and a conductive layer on the interposer. The device package has dies on the conductive layer, where the package layer includes a zero-misalignment two-via stack (ZM2VS) and a dielectric. The ZM2VS is directly coupled to the interconnect. The ZM2VS may further include the dielectric on a conductive pad, a first via on a first seed, and the first seed on a top surface of the conductive pad, where the first via extends through dielectric. The ZM2VS may also have a conductive trace on dielectric, and a second via on a second seed, the second seed is on the dielectric, where the conductive trace connects to first and second vias, where second via connects to an edge of conductive trace opposite from first via.

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