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    METROLOGY RECIPE GENERATION USING PREDICTED METROLOGY IMAGES
    11.
    发明申请
    METROLOGY RECIPE GENERATION USING PREDICTED METROLOGY IMAGES 审中-公开

    公开(公告)号：WO2018118663A2

    公开(公告)日：2018-06-28

    申请号：PCT/US2017/066517

    申请日：2017-12-14

    Applicant: KLA-TENCOR CORPORATION

    Inventor： SMITH, Mark D. ,  FANG, Chao ,  DUFFY, Brian

    IPC: H01L21/66

    Abstract: A metrology system includes a controller communicatively coupled to a metrology tool. The controller may generate a three-dimensional model of a sample, generate a predicted metrology image corresponding to a predicted analysis of the sample with the metrology tool based on the three-dimensional model, evaluate two or more candidate metrology recipes for extracting the metrology measurement from the one or more predicted metrology images, select, based on one or more selection metrics, a metrology recipe from the two or more candidate metrology recipes for extracting a metrology measurement from an image of the structure from the metrology tool, receive an output metrology image of a fabricated structure from the metrology tool based on a metrology measurement of the fabricated structure, and extract the metrology measurement associated with the fabricated structure from the output metrology image based on the metrology recipe.

    METHOD AND SYSTEM FOR DETERMINING IN-PLANE DISTORTIONS IN A SUBSTRATE
    12.
    发明申请
    METHOD AND SYSTEM FOR DETERMINING IN-PLANE DISTORTIONS IN A SUBSTRATE 审中-公开
    用于确定基板中的平面内失真的方法和系统

    公开(公告)号：WO2016164415A1

    公开(公告)日：2016-10-13

    申请号：PCT/US2016/026148

    申请日：2016-04-06

    Applicant: KLA-TENCOR CORPORATION

    Inventor： SMITH, Mark D. ,  SOLOMON, Jose ,  SHERWIN, Stuart ,  MIEHER, Walter D. ,  LEVY, Ady

    IPC: H01L21/66 ,  H01L21/687

    CPC classification number: G01B11/161 ,  G01B9/02021 ,  G01B9/02027 ,  G01B11/2441 ,  G01B2210/56 ,  H01L22/12

    Abstract: The determination of in-plane distortions of a substrate includes measuring one or more out-of-plane distortions of the substrate in an unchucked state, determining an effective film stress of a film on the substrate in the unchucked state based on the measured out-of-plane distortions of the substrate in the unchucked state, determining in-plane distortions of the substrate in a chucked state based on the effective film stress of the film on the substrate in the unchucked state and adjusting at least one of a process tool or an overlay tool based on at least one of the measured out-of-plane distortions or the determined in-plane distortions.

    Abstract translation: 衬底的平面内失真的确定包括测量处于非夹角状态的衬底的一个或多个面外失真，基于所测量的外延位置来确定衬底上的薄膜在无夹持状态下的有效薄膜应力， 基于在无夹持状态下的基板的平面失真，基于在无夹持状态下的基板上的膜的有效膜应力来确定基板在夹持状态下的面内失真，并且调整处理工具或 基于测量的平面外失真或确定的平面内失真中的至少一个的覆盖工具。

    MODEL FOR ACCURATE PHOTORESIST PROFILE PREDICTION
    13.
    发明申请
    MODEL FOR ACCURATE PHOTORESIST PROFILE PREDICTION 审中-公开
    精确光电子特性预测模型

    公开(公告)号：WO2015142756A1

    公开(公告)日：2015-09-24

    申请号：PCT/US2015/020810

    申请日：2015-03-16

    Applicant: KLA-TENCOR CORPORATION

    Inventor： SMITH, Mark D. ,  BIAFORE, John J.

    IPC: H01L21/027

    CPC classification number: G03F7/705 ,  G03F7/0392 ,  G03F7/70625

    Abstract: A photoresist modelling system includes a mathematical model for a photolithography process. The mathematical model may be executable using a computer processor. The mathematical model may be used to model a photoresist as formed on a semiconductor wafer surface. A blocked polymer concentration gradient equation may be implemented into the mathematical model. The blocked polymer concentration gradient equation may describe an initial concentration gradient of a blocked polymer in the photoresist being modelled by the mathematical model.

    Abstract translation: 光致抗蚀剂建模系统包括用于光刻工艺的数学模型。 数学模型可以使用计算机处理器来执行。 该数学模型可以用于对在半导体晶片表面上形成的光致抗蚀剂进行建模。 封闭的聚合物浓度梯度方程可以被实现到数学模型中。 封闭的聚合物浓度梯度方程可以描述通过数学模型建模的光刻胶中封闭的聚合物的初始浓度梯度。

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