公开(公告)号：WO2018064467A1

公开(公告)日：2018-04-05

申请号：PCT/US2017/054279

申请日：2017-09-29

Applicant: KLA-TENCOR CORPORATION

Inventor： LEVY, Ady ,  SMITH, Mark D.

IPC: H01L21/66 ,  H01L21/67

Abstract: A system is disclosed. The system includes a tool cluster. The tool cluster includes a first deposition tool configured to deposit a first layer on a wafer. The tool cluster additionally includes an interferometer tool configured to obtain one or more measurements of the wafer. The tool cluster additionally includes a second deposition tool configured to deposit a second layer on the wafer. The tool cluster additionally includes a vacuum assembly. One or more correctables configured to adjust at least one of the first deposition tool or the second deposition tool are determined based on the one or more measurements. The one or more measurements are obtained between the deposition of the first layer and the deposition of the second layer without breaking the vacuum generated by the vacuum assembly.

Abstract translation: 公开了一种系统。 该系统包括一个工具集群。 该工具集群包括配置成在晶片上沉积第一层的第一沉积工具。 该工具集群另外包括配置成获得晶片的一个或多个测量结果的干涉仪工具。 该工具集群还包括配置为在晶片上沉积第二层的第二沉积工具。 该工具集群还包括一个真空组件。 基于一个或多个测量结果确定构造成调整第一沉积工具或第二沉积工具中的至少一个的一个或多个可校正物。 在第一层的沉积和第二层的沉积之间获得一个或多个测量结果而不破坏由真空组件产生的真空。

公开(公告)号：WO2018013998A1

公开(公告)日：2018-01-18

申请号：PCT/US2017/042257

申请日：2017-07-14

Applicant: KLA-TENCOR CORPORATION

Inventor： BIAFORE, John J. ,  SMITH, Mark D. ,  GRAVES, Trey (John) S. ,  BLANKENSHIP, David A. ,  VAGLIO PRET, Alessandro

IPC: G03F7/20 ,  G03F7/00

Abstract: In some embodiments, a method may include improving a development process of a photoresist. The method may include simulating a negative-tone development process of a photoresist. The method may include determining a reaction of a developer with a soluble photoresist surface. Determining the reaction of the developer may include applying a reaction rate constant at a power of a reaction order to a blocked polymer concentration to yield a resist dissolution rate of soluble resist comprising the dissolution-limited regime of development. The method may include determining a flux of the developer into exposed and partially soluble resist. Determining the flux of the developer may include applying a vector valued diffusion coefficient of the developer dependent upon the blocked polymer concentration to a gradient of developer concentration to an expansion rate of insoluble resist comprising the expansion-controlled regime of development. The method may include optimizing an illumination source and a mask on a full chip.

Abstract translation: 在一些实施例中，一种方法可以包括改进光致抗蚀剂的显影过程。 该方法可以包括模拟光刻胶的负色显影过程。 该方法可以包括确定显影剂与可溶光刻胶表面的反应。 确定显影剂的反应可以包括以反应顺序的功率对封端的聚合物浓度施加反应速率常数，以产生可溶性抗蚀剂的抗蚀剂溶解速率，其包括限制溶解的显影方式。 该方法可以包括确定显影剂向暴露的和部分可溶的抗蚀剂的通量。 确定显影剂的通量可以包括将取决于封端的聚合物浓度的显影剂的矢量值扩散系数应用于显影剂浓度相对于包含膨胀控制显影方式的不溶性抗蚀剂的膨胀率的梯度。 该方法可以包括优化全芯片上的照明源和掩模。

公开(公告)号：WO2017172730A1

公开(公告)日：2017-10-05

申请号：PCT/US2017/024490

申请日：2017-03-28

Applicant: KLA-TENCOR CORPORATION

Inventor： NABETH, Jeremy ,  DEMIRER, Onur N. ,  KARUR-SHANMUGAM, Ramkumar ,  HOO, George (Choon) ,  SPARKA, Christian ,  HEO, Hoyoung ,  SHERWIN, Stuart ,  ANIS, Fatima ,  SMITH, Mark D. ,  PIERSON, Wiliam (Bill)

IPC: H01L21/66

CPC classification number: H01L21/67259 ,  G01B11/002 ,  G01B11/272 ,  G01B2210/56 ,  G03F7/70633 ,  G03F9/7046 ,  G06F17/5009

Abstract: A semiconductor tool includes an illumination source to generate an illumination beam, one or more illumination optical elements to direct a portion of the illumination beam to a sample, a detector, one or more collection optical elements to direct radiation emanating from the sample to the detector, and a controller communicatively coupled to the detector. The controller is configured to measure alignment at a plurality of locations across the sample to generate alignment data, select an analysis area for alignment zone determination, divide the analysis area into two or more alignment zones having different alignment signatures; model the alignment data of at least a first alignment zone of the two or more alignment zones using a first alignment model, and model the alignment data of at least a second alignment zone of the two or more alignment zones using a second alignment model different than the first alignment model.

Abstract translation: 半导体工具包括产生照明光束的照明源，将照明光束的一部分引导至样品的一个或多个照明光学元件，检测器，一个或多个收集光学元件以引导 从样本发射到检测器的辐射，以及通信地耦合到检测器的控制器。 控制器被配置成测量样品上的多个位置处的对准以生成对准数据，选择用于对准区域确定的分析区域，将分析区域分成具有不同对准标记的两个或更多个对准区域; 使用第一对准模型对所述两个或更多个对准区域中的至少第一对准区域的对准数据进行建模，以及使用不同于第二对准模型的第二对准模型对所述两个或更多个对准区域中的至少第二对准区域的对准数据进行建模 第一个对齐模型。

公开(公告)号：WO2017030990A1

公开(公告)日：2017-02-23

申请号：PCT/US2016/046865

申请日：2016-08-12

Applicant: KLA-TENCOR CORPORATION

Inventor： LEE, Myungjun ,  SMITH, Mark D. ,  KAPASI, Sanjay ,  PANDEV, Stillian ,  SANKO, Dimitry ,  SUBRAHMANYAN, Pradeep ,  LEVY, Ady

IPC: G03F7/20 ,  G03F7/00 ,  H01L21/027 ,  H01L21/66

CPC classification number: G03F7/70558 ,  G03F7/70091 ,  G03F7/70641

Abstract: A lithography system includes an illumination source and a set of projection optics. The illumination source directs a beam of illumination from an off-axis illumination pole to a pattern mask. The pattern mask includes a set of pattern elements to generate a set of diffracted beams including illumination from the illumination pole. At least two diffracted beams of the set of diffracted beams received by the set of projection optics are asymmetrically distributed in a pupil plane of the set of projection optics. The at least two diffracted beams of the set of diffracted beams are asymmetrically incident on the sample to form a set of fabricated elements corresponding to an image of the set of pattern elements. The set of fabricated elements on the sample includes one or more indicators of a location of the sample along an optical axis of the set of projection optics.

Abstract translation: 光刻系统包括照明源和一组投影光学器件。 照明源将来自离轴照明杆的照明光束引导到图案掩模。 图案掩模包括一组图案元件，以生成包括来自照明杆的照明的衍射光束集合。 该组投影光学器件所接收的衍射光束组中的至少两个衍射光束不对称地分布在该组投影光学器件的光瞳平面内。 衍射光束组中的至少两个衍射光束不对称地入射到样品上，以形成一组对应于该组图案元件的图像的制造元件。 样品上的一组制造元件包括样品沿着该组投影光学器件的光轴的位置的一个或多个指示器。

公开(公告)号：WO2018118663A3

公开(公告)日：2018-06-28

申请号：PCT/US2017/066517

申请日：2017-12-14

Applicant: KLA-TENCOR CORPORATION

Inventor： SMITH, Mark D. ,  FANG, Chao ,  DUFFY, Brian

IPC: H01L21/66

Abstract: A metrology system includes a controller communicatively coupled to a metrology tool. The controller may generate a three-dimensional model of a sample, generate a predicted metrology image corresponding to a predicted analysis of the sample with the metrology tool based on the three-dimensional model, evaluate two or more candidate metrology recipes for extracting the metrology measurement from the one or more predicted metrology images, select, based on one or more selection metrics, a metrology recipe from the two or more candidate metrology recipes for extracting a metrology measurement from an image of the structure from the metrology tool, receive an output metrology image of a fabricated structure from the metrology tool based on a metrology measurement of the fabricated structure, and extract the metrology measurement associated with the fabricated structure from the output metrology image based on the metrology recipe.

公开(公告)号：WO2017210128A1

公开(公告)日：2017-12-07

申请号：PCT/US2017/034779

申请日：2017-05-26

Applicant: KLA-TENCOR CORPORATION

Inventor： LEE, Myungjun ,  SMITH, Mark D.

IPC: H01L21/66 ,  H01L21/027 ,  H01L21/033

CPC classification number: G03F7/70283 ,  G03F1/22 ,  G03F1/38 ,  G03F7/70091 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

Abstract: A lithography system includes an illumination source including two illumination poles separated along a first direction and symmetrically distributed around an optical axis, a pattern mask to receive illumination from the illumination source, and a set of projection optics to generate an image corresponding to the pattern mask onto a sample. The pattern mask includes a metrology target pattern mask and device pattern mask elements. The device pattern mask elements are distributed along the first direction with a device separation distance. The metrology target pattern mask includes a set of metrology target pattern mask elements having a diffraction pattern corresponding to that of the device pattern mask elements. A metrology target generated on the sample associated with the metrology target pattern mask is characterizable along a second direction and has printing characteristics corresponding to those of device pattern elements generated on the sample associated with the device pattern mask elements.

Abstract translation: 光刻系统包括：照明源，其包括沿着第一方向分离且围绕光轴对称分布的两个照明极，用于从照明源接收照明的图案掩模，以及一组投影光学系统 将与图案掩模对应的图像生成到样本上。 图案掩模包括度量目标图案掩模和器件图案掩模元素。 器件图案掩模元件沿着第一方向以器件分离距离分布。 度量目标图案掩模包括具有对应于器件图案掩模元件的衍射图案的衍射图案的一组度量目标图案掩模元件。 在与度量目标图案掩模相关联的样本上生成的度量目标可以沿着第二方向表征并且具有与在与设备图案掩模元件相关联的样本上生成的设备图案元素的那些相对应的打印特征。

公开(公告)号：WO2016182965A1

公开(公告)日：2016-11-17

申请号：PCT/US2016/031381

申请日：2016-05-07

Applicant: KLA-TENCOR CORPORATION

Inventor： PANDEV, Stilian ,  KAPASI, Sanjay ,  SMITH, Mark D. ,  LEVY, Ady

IPC: H01L21/66

CPC classification number: G01B11/00 ,  H01L22/12 ,  H01L22/20

Abstract: Methods and systems for monitoring parameters characterizing a set of hot spot structures fabricated at different locations on a semiconductor wafer are presented herein. The hot spot structures are device structures that exhibit sensitivity to process variations and give rise to limitations on permissible process variations that must be enforced to prevent device failures and low yield. A trained hot spot measurement model is employed to receive measurement data generated by one or more metrology systems at one or more metrology targets and directly determine values of one or more hot spot parameters. The hot spot measurement model is trained to establish a functional relationship between one or more characteristics of a hot spot structure under consideration and corresponding measurement data associated with measurements of at least one metrology target on the same wafer. A fabrication process parameter is adjusted based on the value of a measured hot spot parameter.

Abstract translation: 本文提供了用于监测表征在半导体晶片上的不同位置处制造的一组热点结构的参数的方法和系统。 热点结构是对工艺变化表现出敏感性并且对允许的过程变化产生限制，这些结构必须被强制以防止器件故障和低产量。 采用经过训练的热点测量模型来接收由一个或多个测量系统在一个或多个测量目标产生的测量数据，并直接确定一个或多个热点参数的值。 对热点测量模型进行训练以建立所考虑的热点结构的一个或多个特征与相同测量结果相关联的测量数据与相同晶片上的至少一个测量目标的测量数据之间的功能关系。 基于测量的热点参数的值来调整制造工艺参数。

公开(公告)号：WO2019209384A1

公开(公告)日：2019-10-31

申请号：PCT/US2018/066628

申请日：2018-12-20

Applicant: KLA-TENCOR CORPORATION

Inventor： VUKKADALA, Pradeep ,  SMITH, Mark D. ,  LEVY, Ady ,  DIGHE, Prasanna ,  MUELLER, Dieter

IPC: H01L21/67 ,  H01L21/033

Abstract: A controller is configured to perform at least a first characterization process prior to at least one discrete backside film deposition process on a semiconductor wafer; perform at least an additional characterization process following the at least one discrete backside film deposition process; determine at least one of a film force or one or more in-plane displacements for at least one discrete backside film deposited on the semiconductor wafer via the at least one discrete backside film deposition process based on the at least the first characterization process and the at least the additional characterization process; and provide at least one of the film force or the one or more in-plane displacements to at least one process tool via at least one of a feed forward loop or a feedback loop to improve performance of one or more fabrication processes.

公开(公告)号：WO2018160778A1

公开(公告)日：2018-09-07

申请号：PCT/US2018/020341

申请日：2018-03-01

Applicant: KLA-TENCOR CORPORATION

Inventor： DEMIRER, Onur N. ,  PIERSON, William ,  SMITH, Mark D. ,  NABETH, Jeremy ,  GARCIA-MEDINA, Miguel ,  YAP, Lipkong

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027

Abstract: A process control system includes a controller configured to generate a reference overlay signature based on one or more overlay reference layers of a sample, extrapolate the reference overlay signature to a set of correctable fields for the exposure of a current layer of the sample to generate a full-field reference overlay signature, identify one or more alignment fields of the set of correctable fields, generate an alignment-correctable signature by modeling alignment corrections for the set of correctable fields, subtract the alignment-correctable signature from the full-field reference overlay signature to generate feedforward overlay corrections for the current layer when the one or more overlay reference layers are the same as the one or more alignment reference layers, generate lithography tool corrections based on the feedforward overlay corrections, and provide the lithography tool corrections for the current layer to the lithography tool.

公开(公告)号：WO2016172122A1

公开(公告)日：2016-10-27

申请号：PCT/US2016/028314

申请日：2016-04-19

Applicant: KLA-TENCOR CORPORATION

Inventor： LEE, Myungjun ,  SMITH, Mark D. ,  ADEL, Michael E. ,  AMIT, Eran ,  KANDEL, Daniel

IPC: H01L21/66

CPC classification number: G01J9/00 ,  G03F7/705 ,  G03F7/70683 ,  H01L22/30

Abstract: Metrology methods, modules and targets are provided, for measuring tilted device designs. The methods analyze and optimize target design with respect to the relation of the Zernike sensitivity of pattern placement errors (PPEs) between target candidates and device designs. Monte Carlo methods may be applied to enhance the robustness of the selected target candidates to variation in lens aberration and/or in device designs. Moreover, considerations are provided for modifying target parameters judiciously with respect to the Zernike sensitivities to improve metrology measurement quality and reduce inaccuracies.

Abstract translation: 提供了测量方法，模块和目标，用于测量倾斜的设备设计。 该方法针对目标候选者和设备设计之间的图案布局错误（PPEs）的泽尔尼克敏感度的关系，分析和优化目标设计。 可以应用蒙特卡洛方法来增强所选择的目标候选者对透镜像差和/或装置设计中的变化的鲁棒性。 此外，还提供了考虑到明确地修改Zernike敏感度的目标参数，以提高计量测量质量并减少不准确度。