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    Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction
    11.
    发明授权
    Methods and systems for semiconductor metrology based on polychromatic soft X-Ray diffraction 有权

    公开(公告)号：US11333621B2

    公开(公告)日：2022-05-17

    申请号：US16030849

    申请日：2018-07-09

    Applicant: KLA-Tencor Corporation

    Inventor： Daniel Wack ,  Oleg Khodykin ,  Andrei V. Shchegrov ,  Alexander Kuznetsov ,  Nikolay Artemiev ,  Michael Friedmann

    IPC: G01N23/201 ,  G01N23/20008 ,  H01L21/67 ,  H01L21/66

    Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers. In another aspect, active focusing optics project programmed ranges of illumination wavelengths, angles of incidence, and azimuth angles, or any combination thereof, onto a metrology area, either simultaneously or sequentially.

    Methods and systems for co-located metrology
    12.
    发明授权
    Methods and systems for co-located metrology 有权

    公开(公告)号：US10804167B2

    公开(公告)日：2020-10-13

    申请号：US16257066

    申请日：2019-01-24

    Applicant: KLA-Tencor Corporation

    Inventor： David Y. Wang ,  Esen Salcin ,  Michael Friedmann ,  Derrick Shaughnessy ,  Andrei V. Shchegrov ,  Jonathan M. Madsen ,  Alexander Kuznetsov

    IPC: H01L21/66 ,  G03F7/20 ,  G01N21/95 ,  G01B11/02 ,  G06N3/02 ,  G01N21/21

    Abstract: Methods and systems for performing co-located measurements of semiconductor structures with two or more measurement subsystems are presented herein. To achieve a sufficiently small measurement box size, the metrology system monitors and corrects the alignment of the measurement spot of each metrology subsystem with a metrology target to achieve maximum co-location of the measurement spots of each metrology subsystem with the metrology target. In another aspect, measurements are performed simultaneously by two or more metrology subsystems at high throughput at the same wafer location. Furthermore, the metrology system effectively decouples simultaneously acquired measurement signals associated with each measurement subsystem. This maximizes signal information associated with simultaneous measurements of the same metrology by two or more metrology subsystems.

    Apparatus and methods for detecting overlay errors using scatterometry
    16.
    发明授权
    Apparatus and methods for detecting overlay errors using scatterometry 有权

    公开(公告)号：US10451412B2

    公开(公告)日：2019-10-22

    申请号：US15613119

    申请日：2017-06-02

    Applicant: KLA-Tencor Corporation

    Inventor： Michael Adel ,  Walter D. Mieher ,  Ibrahim Abdulhalim ,  Ady Levy ,  Michael Friedmann

    IPC: G03F7/20 ,  G01B11/27 ,  G01N21/95 ,  G01N21/47 ,  H01L21/68 ,  H01L23/544

    Abstract: Disclosed is a method for determining an overlay error between at least two layers in a multiple layer sample. An imaging optical system is used to measure multiple measured optical signals from multiple periodic targets on the sample, and the targets each have a first structure in a first layer and a second structure in a second layer. There are predefined offsets between the first and second structures A scatterometry overlay technique is used to analyze the measured optical signals of the periodic targets and the predefined offsets of the first and second structures of the periodic targets to thereby determine an overlay error between the first and second structures of the periodic targets. The scatterometry overlay technique is a phase based technique, and the imaging optical system is configured to have an illumination and/or collection numerical aperture (NA) and/or spectral band selected so that a specific diffraction order is collected and measured for the plurality of measured optical signals. In one aspect, the number of periodic targets equals half the number of unknown parameters.

    Methods And Systems For Semiconductor Metrology Based On Polychromatic Soft X-Ray Diffraction
    17.
    发明申请
    Methods And Systems For Semiconductor Metrology Based On Polychromatic Soft X-Ray Diffraction 审中-公开

    公开(公告)号：US20190017946A1

    公开(公告)日：2019-01-17

    申请号：US16030849

    申请日：2018-07-09

    Applicant: KLA-Tencor Corporation

    Inventor： Daniel Wack ,  Oleg Khodykin ,  Andrei V. Shchegrov ,  Alexander Kuznetsov ,  Nikolay Artemiev ,  Michael Friedmann

    IPC: G01N23/201 ,  G01N23/20008 ,  H01L21/66 ,  H01L21/67

    Abstract: Methods and systems for performing measurements of semiconductor structures based on high-brightness, polychromatic, reflective small angle x-ray scatterometry (RSAXS) metrology are presented herein. RSAXS measurements are performed over a range of wavelengths, angles of incidence, and azimuth angles with small illumination beam spot size, simultaneously or sequentially. In some embodiments, RSAXS measurements are performed with x-ray radiation in the soft x-ray (SXR) region at grazing angles of incidence in the range of 5-20 degrees. In some embodiments, the x-ray illumination source size is 10 micrometers or less, and focusing optics project the source area onto a wafer with a demagnification factor of 0.2 or less, enabling an incident x-ray illumination spot size of less than two micrometers. In another aspect, active focusing optics project programmed ranges of illumination wavelengths, angles of incidence, and azimuth angles, or any combination thereof, onto a metrology area, either simultaneously or sequentially.

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