公开(公告)号：DE60001680T2

公开(公告)日：2004-08-05

申请号：DE60001680

申请日：2000-02-28

Applicant: LUCENT TECHNOLOGIES INC ,  ARCH SPEC CHEM INC

Inventor： GABOR ALLEN H ,  HOULIHAN FRANCIS MICHAEL ,  NALAMASU OMKARAM

IPC: C08K5/00 ,  C08K5/08 ,  C08K5/32 ,  C08L25/18 ,  C08L33/08 ,  C08L33/10 ,  C08L45/00 ,  C08L101/02 ,  G03F7/004 ,  G03F7/039 ,  G03F7/40 ,  H01L21/027

Abstract: A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains acid labile groups either pendant to the polymer or to a dissolution inhibitor that is combined with the polymer. The acid labile groups significantly decrease the solubility of the polymer in a solution of aqueous base. The resist material also contains a photoacid generator and a radical scavenger. The radical scavenger reduces the amount of aromatic compounds outgassed from the resist during the lithographic process. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

公开(公告)号：DE69800033D1

公开(公告)日：1999-12-02

申请号：DE69800033

申请日：1998-03-03

Applicant: LUCENT TECHNOLOGIES INC

Inventor： CHANDROSS EDWIN ARTHUR ,  HOULIHAN FRANCIS MICHAEL ,  NALAMASU OMKARAM ,  REICHMANIS ELSA ,  WALLOW THOMAS INGOLF

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains a polymer in combination with a dissolution inhibitor and a photoacid generator (PAG). The dissolution inhibitor is the condensation reaction product of a saturated polycyclic hydrocarbon compound with at least one hydroxy (OH) substituent and a difunctional saturated linear, branched, or cyclic hydrocarbon compound wherein the functional groups are either carboxylic acid or carboxylic acid chloride groups. The polymer optionally has acid labile groups pendant thereto which significantly decrease the solubility of the polymer in a solution of aqueous base. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

公开(公告)号：EP0794458A3

公开(公告)日：1998-05-13

申请号：EP97301436

申请日：1997-03-04

Applicant: LUCENT TECHNOLOGIES INC

Inventor： HOULIHAN FRANCIS MICHAEL ,  REICHMANIS ELSA ,  NALAMASU OMKARAM ,  WALLOW THOMAS INGOLF

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC classification number: G03F7/0045 ,  G03F7/039 ,  Y10S430/114 ,  Y10S430/146

Abstract: The present invention is directed to a process for device fabrication and resist materials that are used in the process. The resist material contains a polymer that is the polymerization product of a monomer that contains alicyclic moieties and at least one other monomer. The polymer is formed by free radical polymerization, and the resulting polymer either has alicyclic moieties incorporated into the polymer backbone or pendant to the polymer backbone via saturated hydrocarbon linkages. Other monomers are selected for polymerization with the alicyclic moiety-containing monomer on the basis of the ability of the monomer to copolymerize by free radical polymerization. Although the polymers are contemplated as useful in resist materials that are sensitive to radiation in the ultraviolet, and x-ray wavelengths as well as sensitive to electron beam radiation, the polymers are particularly advantageous for use in process in which the exposing radiation is 193 nm, because the amount of ethylenic unsaturation in these resist materials is low. In one embodiment, the resist material contains the polymer in combination with a dissolution inhibitor and a photoacid generator (PAG). In another embodiment, the polymer has acid labile groups pendant thereto which significantly decrease the solubility of the polymer in a solution of aqueous base. In either embodiment, a film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

Abstract translation: 本发明涉及在该方法中使用的器件制造和抗蚀剂材料的方法。 抗蚀剂材料包含聚合物，其是含有脂环部分的单体和至少一种其它单体的聚合产物。 聚合物通过自由基聚合形成，并且所得聚合物或者具有引入到聚合物主链中的脂环部分或通过饱和烃键垂饰于聚合物主链。 基于单体通过自由基聚合共聚的能力，选择其它单体与含脂环部分的单体聚合。 虽然聚合物被认为可用于对紫外线和X射线波长以及对电子束辐射敏感的抗辐射材料，但是聚合物特别适用于其中曝光辐射为193nm ，因为这些抗蚀剂材料中的烯属不饱和基团的量低。 在一个实施方案中，抗蚀剂材料含有与溶解抑制剂和光酸产生剂（PAG）组合的聚合物。 在另一个实施方案中，聚合物具有侧链的酸不稳定基团，其显着降低聚合物在碱性水溶液中的溶解度。 在任一实施例中，抗蚀剂材料的膜形成在基底上并暴露于描绘辐射。 辐射引起抗蚀剂材料中的化学变化，使得暴露的抗蚀剂材料比抗蚀剂材料的未曝光部分基本上更溶于碱性水溶液。 使用常规技术显影引入到抗蚀剂材料中的图像，然后将所得到的图案转移到下面的基底中。