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    LITHOGRAPHIC PROCESS AND ENERGY SUSCEPTIBLE MATERIAL TO BE USED IN THAT PROCESS
    1.
    发明专利
    LITHOGRAPHIC PROCESS AND ENERGY SUSCEPTIBLE MATERIAL TO BE USED IN THAT PROCESS 失效

    公开(公告)号：JPH11133612A

    公开(公告)日：1999-05-21

    申请号：JP23788298

    申请日：1998-08-25

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： MARIE ELLEN GALVIN-DONOGUYUU ,  HOULIHAN FRANCIS MICHAEL ,  JANET MIHOKO KOMETANI ,  OMKARAM NALAMASU ,  THOMAS XAVIER NEENAN

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/30 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To provide a lithographic process and an energy susceptible material to be used in this process. SOLUTION: This energy susceptible resist material contains a polymer or a polymer mixture in combination with an energy susceptible material such as a photo-acid producing material. At least three substituents are dispersed in the polymer blend. The first substituent is a hydroxyl group (OH). The second substituent is an acid susceptible or acid complex group which is released in the presence of an acid and replaced by an OH group. The third substituent produces a hydrogen bond with the first substituent. After an energy susceptible resist material layer is formed on a substrate, the layer is exposed to radiation according to a pattern. Thus, the pattern image is introduced into the energy susceptible material. Then the image is developed and transferred to the substrate under the layer.

    PATTERN FORMING METHOD FOR PRODUCING DEVICE
    2.
    发明专利
    PATTERN FORMING METHOD FOR PRODUCING DEVICE 失效

    公开(公告)号：JPH1010739A

    公开(公告)日：1998-01-16

    申请号：JP4995697

    申请日：1997-03-05

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： HOULIHAN FRANCIS MICHAEL ,  OMKARAM NALAMASU ,  ELSA REICHMANIS ,  WALLOW THOMAS INGOLF

    IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To make a resist material contg. a deriv. of a (meth)acrylate copolymer fit for a lithographic process using light of 193nm by using an energy sensitive resist material contg. a polymer having satd. alicyclic parts. SOLUTION: An energy sensitive resist material contg. a polymer having satd. alicyclic parts incorporated into the backbone of the polymer or attached to the backbone through satd. hydrocarbon combining groups is utilized. About 25-50mol% of the polymer is made from a monomer contg. such an alicyclic part. The polymer is a copolymer of the monomer with at least one other monomer. The alicyclic part of the monomer is one or more hydrocarbon rings each having one or more ethylenic unsatd. bonds. The 2nd monomer is copolymerizable with the alicyclic monomer by free radical polymn.

    ENERGY SENSITIVE RESIST MATERIAL AND MANUFACTURE OF DEVICE BY USING THE MATERIAL
    4.
    发明专利
    ENERGY SENSITIVE RESIST MATERIAL AND MANUFACTURE OF DEVICE BY USING THE MATERIAL 失效

    公开(公告)号：JPH11160861A

    公开(公告)日：1999-06-18

    申请号：JP28039498

    申请日：1998-10-02

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： HOULIHAN FRANCIS MICHAEL ,  OMKARAM NALAMASU ,  WALLOW THOMAS INGOLF

    IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

    Abstract: PROBLEM TO BE SOLVED: To reduce a form erosion extent from imaging to developing by incorporating a polymer having substituent pendants instable to acid and a compound having a specified substituted amino group in the resist material. SOLUTION: The energy sensitive resist layer formed on a substrate contains the polymer and the substituted amino compound represented by the formula in which Y is an N-containing group; X is a chromophore or a positively charged onium cation. The substituted amino compound is a photoacid generator(PAG) and generates a photoacid having a pKa of 0-6, preferably, 0-4, by irradiation with light specified in wavelength.

    5.
    发明专利
    未知

    公开(公告)号：DE69832352T2

    公开(公告)日：2006-08-03

    申请号：DE69832352

    申请日：1998-09-29

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： HOULIHAN FRANCIS MICHAEL ,  WALLOW THOMAS INGOLF ,  NALAMASU OMKARAM

    IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

    Abstract: A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains a substituted amine-containing component and a polymer. The substituted-amine containing component is either a photoacid generator, or an amine additive to the resist material that also contains a photoacid generator. The resist material contains acid labile groups either pendant to the polymer or to a dissolution inhibitor that is combined with the polymer. The acid labile groups significantly decrease the solubility of the polymer in a solution of aqueous base. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

    6.
    发明专利
    未知

    公开(公告)号：DE60001680D1

    公开(公告)日：2003-04-24

    申请号：DE60001680

    申请日：2000-02-28

    Applicant: LUCENT TECHNOLOGIES INC ,  ARCH SPEC CHEM INC

    Inventor： GABOR ALLEN H ,  HOULIHAN FRANCIS MICHAEL ,  NALAMASU OMKARAM

    IPC: C08K5/00 ,  C08K5/08 ,  C08K5/32 ,  C08L25/18 ,  C08L33/08 ,  C08L33/10 ,  C08L45/00 ,  C08L101/02 ,  G03F7/004 ,  G03F7/039 ,  G03F7/40 ,  H01L21/027

    Abstract: A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains acid labile groups either pendant to the polymer or to a dissolution inhibitor that is combined with the polymer. The acid labile groups significantly decrease the solubility of the polymer in a solution of aqueous base. The resist material also contains a photoacid generator and a radical scavenger. The radical scavenger reduces the amount of aromatic compounds outgassed from the resist during the lithographic process. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

    8.
    发明专利
    未知

    公开(公告)号：DE69800033T2

    公开(公告)日：2000-07-20

    申请号：DE69800033

    申请日：1998-03-03

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： CHANDROSS EDWIN ARTHUR ,  HOULIHAN FRANCIS MICHAEL ,  NALAMASU OMKARAM ,  REICHMANIS ELSA ,  WALLOW THOMAS INGOLF

    IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

    Abstract: A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains a polymer in combination with a dissolution inhibitor and a photoacid generator (PAG). The dissolution inhibitor is the condensation reaction product of a saturated polycyclic hydrocarbon compound with at least one hydroxy (OH) substituent and a difunctional saturated linear, branched, or cyclic hydrocarbon compound wherein the functional groups are either carboxylic acid or carboxylic acid chloride groups. The polymer optionally has acid labile groups pendant thereto which significantly decrease the solubility of the polymer in a solution of aqueous base. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

    9.
    发明专利
    未知

    公开(公告)号：DE69832352D1

    公开(公告)日：2005-12-22

    申请号：DE69832352

    申请日：1998-09-29

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： HOULIHAN FRANCIS MICHAEL ,  WALLOW THOMAS INGOLF ,  NALAMASU OMKARAM

    IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

    Abstract: A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains a substituted amine-containing component and a polymer. The substituted-amine containing component is either a photoacid generator, or an amine additive to the resist material that also contains a photoacid generator. The resist material contains acid labile groups either pendant to the polymer or to a dissolution inhibitor that is combined with the polymer. The acid labile groups significantly decrease the solubility of the polymer in a solution of aqueous base. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

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