公开(公告)号：SE325338B

公开(公告)日：1970-06-29

申请号：SE426867

申请日：1967-03-29

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： INOUE M ,  TAKAYANAGI S ,  KANO G ,  MATSUNO J

IPC: C23C16/16 ,  H01L21/00 ,  H01L29/00 ,  H01L9/00

公开(公告)号：SE361772B

公开(公告)日：1973-11-12

申请号：SE1467169

申请日：1969-10-27

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： KANO G ,  KATO H

IPC: H01L27/07 ,  H01L29/00 ,  H04R23/00 ,  H01C9/06

Abstract: 1,253,395. Pressure sensitive transistor. MATSUSHITA ELECTRONICS CORP. 22 Oct., 1969 [28 Oct., 1968 (2)], No. 51720/69. Heading H1K. The electrical connection to the base, emitter or collector region of a transistor forms a Schottky barrier therewith and is associated with means for applying a pressure to be sensed to the barrier. The transistor can be formed by conventional planar techniques involving the diffusion of boron and phosphorus into an oxidecoated wafer, the Schottky contact being provided for example by sputtering molybdenum on to an area of the base or emitter having a surface doping of 3-5 Î 10 16 cm. -3 .

公开(公告)号：SE338763B

公开(公告)日：1971-09-20

申请号：SE1720466

申请日：1966-12-15

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： INOUE M ,  TAKAYANAGI S ,  KANO G ,  MATSUNO J

IPC: C23C16/14 ,  C23C16/16 ,  H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  B01J17/32

Abstract: 1,173,330. Semi-conductor contacts. MATSUSHITA ELECTRONICS CORP. 14 March, 1967 [29 March, 1966], No. 11888/67. Heading H1K. [Also in Division C7] A molybdenum or tungsten ohmic contact on semi-conductor material with a surface impurity concentration of 10 18 cm. -3 or more is provided by deposition from the hydrogen reduction of a halide of the metal or thermal decomposition of a carbonyl compound of the metal on to the semi-conductor which is at 500‹ C. or less. Fig. 1 shows an N-type 70 ohm-cm. silicon wafer 2 into which phosphorus has been diffused to form N-type region 3 and, after slicing treatment, boron (from boron trioxide suspended in monomethylenestycolethyl) is diffused in to form P-type region 1. Molybdenum films 4 are then applied by supporting the slice on a pedestal 12 (Fig. 2), hydrogen being fed from pipe 17 over a tray 14 of molybdenum pentachloride at 100‹ C. through a heated mesh 19 to deposit the molybdenum film. A gold film is evaporated on to the molybdenum and a copper block 5 thermo compression bonded with a gold foil to the gold. The invention is distinguished from a similar process to provide a Schottky barrier electrode as described in Specification 1,172,230. The semi-conductor material may consist of silicon, germanium or gallium arsenide.

公开(公告)号：SE336848B

公开(公告)日：1971-07-19

申请号：SE426767

申请日：1967-03-29

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： MATSUNO J ,  TAKAYANAGI S ,  INOUE M ,  KANO G

IPC: C23C16/12 ,  C23C16/14 ,  H01L21/00 ,  H01L29/00 ,  H01L9/00

Abstract: A molybdenum or tungsten rectifying contact is provided on a silicon, germanium or gallium arsenide substrate by deposition after reduction of the halide of the metal while the temperature of the semi-conductor substrate is maintained between 400 DEG and 500 DEG C. and then subjecting the coated body to a stream of hydrogen at 550 DEG to 700 DEG C. to complete the reduction of any lower halides of the metal in the coating. It is stated that deposition below 500 DEG C. is necessary to provide a good Schottky barrier but that at these temperatures reduction of the halides is liable to be incomplete and so the second step is provided. MoCl5 and W Cl6 are specified as examples of suitable halides; in the embodiment the metallic coating is then coated with copper and the other semi-conductor surface is provided with an ohmic gold-antimony contact to provide a diode. The invention is also applicable to field effect transistors, metal base transistors and photo-diodes.