中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

17 records (took 0.019 seconds)

    RADIO FREQUENCY MEMS SWITCH
    12.
    发明申请
    RADIO FREQUENCY MEMS SWITCH 审中-公开
    无线电频率MEMS开关

    公开(公告)号：WO2009057988A2

    公开(公告)日：2009-05-07

    申请号：PCT/MY2008000122

    申请日：2008-10-22

    Applicant: MIMOS BERHAD ,  SULAIMAN SURAYA ,  SYONO MOHD ISMAHADI

    Inventor： SULAIMAN SURAYA ,  SYONO MOHD ISMAHADI

    IPC: H01L29/00 ,  H01H59/00

    CPC classification number: H01H1/0036 ,  H01G5/18 ,  H01H59/0009

    Abstract: There is disclosed a method of fabricating radio frequency surface microelectromechanical (MEMS) switch. The method utilizes four masks, each configured through photolithography process at different stages that resulted in substantially planar silicon dioxide, critical in providing better mechanical performance of the RF MEMS switch. The steps include, among others, depositing silicon on glass liquid to fill small holes for a smooth silicon oxide surface, employing back etch process and performing wet etching by using chemical solution called Pad Etch. An RF MEMS switch that comprise of a lower electrode (30) formed on the surface of a silicon substrate (31), an aluminum membrane (32) suspended over the electrode and a dielectric layer (33) covering the lower electrode fabricated through the process is also disclosed.

    Abstract translation: 公开了一种制造射频表面微机电（MEMS）开关的方法。 该方法利用四个掩模，每个掩模均通过不同阶段的光刻工艺配置，导致基本平面的二氧化硅，这对于提供RF MEMS开关的更好的机械性能至关重要。 其中的步骤包括在玻璃液体上沉积硅以填充平滑氧化硅表面的小孔，采用背面蚀刻工艺并通过使用称为刮板蚀刻的化学溶液进行湿法蚀刻。 一种RF MEMS开关，包括形成在硅衬底（31）表面上的下电极（30），悬置在电极上的铝膜（32）和覆盖通过该工艺制造的下电极的介电层（33） 也被披露。

    MEMS BASED PROBE CARD AND A METHOD OF TESTING SEMICONDUCTOR ION SENSOR USING THE SAME
    13.
    发明申请
    MEMS BASED PROBE CARD AND A METHOD OF TESTING SEMICONDUCTOR ION SENSOR USING THE SAME 审中-公开
    基于MEMS的探针卡和使用其测试半导体离子传感器的方法

    公开(公告)号：WO2009066979A2

    公开(公告)日：2009-05-28

    申请号：PCT/MY2008000144

    申请日：2008-11-20

    Applicant: MIMOS BERHAD ,  SYONO MOHD ISMAHADI

    Inventor： SYONO MOHD ISMAHADI

    IPC: H01L21/66 ,  B81B7/00

    CPC classification number: G01R1/06727 ,  G01R3/00

    Abstract: An MEMS based Probe Card (100) for testing integrated circuits at wafer level comprising a printed circuit board (1) in which an opening is formed on a middle portion therethrough; at least two opposing first electrode pad (3) being deposited on a periphery of the printed circuit board (1); and a wafer assembly disposed around the central of the printed circuit board (1) comprising a substrate layer (5) in which an opening is formed on a middle portion therethrough;an insulating layer (7) on the substrate layer (5); at least two opposing second electrode pads (9) in the peripheral region of the insulating layer (7); and a probe pin (11) on each second electrode pad (9), wherein the first electrode pads (3) and the second electrode pads (9) are electrically interconnected by a electrical conductor (13).

    Abstract translation: 一种用于在晶片级测试集成电路的基于MEMS的探针卡（100），包括印刷电路板（1），其中通过其中的中间部分形成开口; 至少两个相对的第一电极焊盘（3）沉积在印刷电路板（1）的周边上; 以及设置在所述印刷电路板（1）的中央周围的晶片组件，所述晶片组件包括基板层（5），所述基板层（5）中通过其中间部分形成开口;在所述基板层（5）上的绝缘层（7） 在绝缘层（7）的周边区域中的至少两个相对的第二电极焊盘（9）; 和每个第二电极焊盘（9）上的探针（11），其中第一电极焊盘（3）和第二电极焊盘（9）通过电导体（13）电互连。

    AN INTEGRATED PACKAGED ENVIRONMENTAL SENSOR AND ROIC AND A METHOD OF FABRICATING THE SAME
    14.
    发明申请
    AN INTEGRATED PACKAGED ENVIRONMENTAL SENSOR AND ROIC AND A METHOD OF FABRICATING THE SAME 审中-公开
    一种集成的包装环境传感器和ROIC及其制造方法

    公开(公告)号：WO2011053110A3

    公开(公告)日：2011-08-18

    申请号：PCT/MY2010000182

    申请日：2010-09-30

    Applicant: MIMOS BERHAD ,  SYONO MOHD ISMAHADI ,  BIEN DANIEL CHIA SHENG ,  LEE HING WAH

    Inventor： SYONO MOHD ISMAHADI ,  BIEN DANIEL CHIA SHENG ,  LEE HING WAH

    IPC: G01N37/00 ,  G01N33/00

    CPC classification number: G01D11/245 ,  G06K19/0717

    Abstract: An integrated packaged microchip (100) including at least one environmental sensor (104) and at least one Read-Out Integrated Chip (ROIC) (102) is provided, characterized in that, the integrated packaged microchip (100) further includes an etched opening (108) of the environmental sensor (104) exposed to a sensable environment, using at least one layer of glass wafer (101,106) and at least one layer of silicon wafer (107).

    Abstract translation: 提供包括至少一个环境传感器（104）和至少一个读出集成芯片（ROIC）（102）的集成封装微芯片（100），其特征在于，集成封装微芯片（100）还包括蚀刻开口 使用至少一层玻璃晶片（101,106）和至少一层硅晶片（107），将所述环境传感器（104）的暴露于敏感环境的环境传感器（108）移除。

    FULLY INTEGRATED ISFET- VALVELESS MICROPUMP
    16.
    发明申请
    FULLY INTEGRATED ISFET- VALVELESS MICROPUMP 审中-公开
    完全集成的ISFET-VALVELESS MICROPUMP

    公开(公告)号：WO2009045092A3

    公开(公告)日：2009-06-11

    申请号：PCT/MY2008000117

    申请日：2008-09-29

    Applicant: MIMOS BERHAD ,  SYONO MOHD ISMAHADI ,  ABDUL RANI ROZINA ,  LEE HING WAH

    Inventor： SYONO MOHD ISMAHADI ,  ABDUL RANI ROZINA ,  LEE HING WAH

    IPC: G01N27/333

    CPC classification number: F04B19/006 ,  G01N27/4148

    Abstract: The present invention relates to a fully integrated ISFET valveless micropump for use as a pH sensor and as a chemical based sensor especially intended for Wireless Sensor Network (WSN) characterized in that wherein the valveless pump with ISFET is embedded along a pump channel and temperature sensors at its inlet and wherein a membrane in the middle is the pump diaphragm and is electrostatically actuated by an electrode above it which is deposited on the glass and wherein when the membrane controlled by a microcontroller is in motion, fluid or gas would be pumped in thru the inlet and travels thru the channel where ISFET is located and out thru the outlet.

    Abstract translation: 本发明涉及用作pH传感器和特别用于无线传感器网络（WSN）的基于化学传感器的完全集成的ISFET无阀微型泵，其特征在于，其中具有ISFET的无阀泵沿泵通道和温度传感器 在其入口处，并且其中中间的膜是泵隔膜，并且由其上方的电极静电致动，沉积在玻璃上，并且其中当由微控制器控制的膜运动时，流体或气体将被泵送通过 入口并通过ISFET所在的通道穿过出口。

    A VERTICAL THIN POLYSILICON SUBSTRATE ISFET
    17.
    发明申请
    A VERTICAL THIN POLYSILICON SUBSTRATE ISFET 审中-公开
    垂直薄多晶硅衬底ISFET

    公开(公告)号：WO2009045091A3

    公开(公告)日：2009-06-04

    申请号：PCT/MY2008000116

    申请日：2008-09-29

    Applicant: MIMOS BERHAD ,  SYONO MOHD ISMAHADI ,  ABDUL RANI ROZINA

    Inventor： SYONO MOHD ISMAHADI ,  ABDUL RANI ROZINA

    IPC: G01N27/333 ,  G01N27/30

    CPC classification number: G01N27/4148

    Abstract: The present invention generally relates to a vertical thin polysilicon substrate ISFET for the measurement of hydrogen ions (pH) and other ion activity in solution characterized in that wherein the present invention comprises of a method of making polysilicon vertical ISFET which is fully CMOS compatible and wherein the substrate is the polysilicon which is vertically sandwiched between a source and a drain and wherein a very high drive current is possible to achieve due to the thin polysilicon material and wherein the sandwiched structure is designed to ensure excellent noise isolation and wherein the gate lies on the same surface level as the drain and hence a very large area for better gate sensitivity is possible.

    Abstract translation: 本发明一般涉及用于测量溶液中氢离子（pH）和其它离子活性的垂直薄多晶硅衬底ISFET，其特征在于其中本发明包括制造完全CMOS兼容的多晶硅垂直ISFET的方法，其中 衬底是垂直夹在源极和漏极之间的多晶硅，并且其中由于薄的多晶硅材料可以实现非常高的驱动电流，并且其中夹层结构被设计成确保优异的噪声隔离，并且其中栅极位于 与漏极相同的表面水平，因此具有非常大的面积以获得更好的栅极灵敏度是可能的。

Patent Agency Ranking