公开(公告)号：WO2011100647A2

公开(公告)日：2011-08-18

申请号：PCT/US2011024670

申请日：2011-02-12

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  KAPUR PAWAN ,  NAG SOMNATH ,  KAMIAN GEORGE ,  ASHJAEE JAY ,  YONEHARA TAKAO

Inventor： MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  KAPUR PAWAN ,  NAG SOMNATH ,  KAMIAN GEORGE ,  ASHJAEE JAY ,  YONEHARA TAKAO

IPC: H01L31/042 ,  H01L21/20 ,  H01L21/306 ,  H01L31/18

CPC classification number: H01L21/20 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re -usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.

Abstract translation: 本公开提供了从可再利用的半导体模板的两侧制造TFSS的制造方法和装置设计，从而有效地增加了基板制造的吞吐量并降低了基板的制造成本。 对于给定数量的模板重用周期，这种方法还将每个制造的衬底（TFSS）的平均起始模板成本降低约2倍。

公开(公告)号：WO2014071417A3

公开(公告)日：2014-11-06

申请号：PCT/US2013068599

申请日：2013-11-05

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M

Inventor： MOSLEHI MEHRDAD M

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L31/02 ,  H01L31/0201 ,  H01L31/022433 ,  H01L31/02245 ,  H01L31/0443 ,  H01L31/0445 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/1896 ,  Y02B10/10 ,  Y02E10/50

Abstract: According to one aspect of the disclosed subject matter, a monolithically isled solar cell is provided. The solar cell comprises a semiconductor layer having a light receiving frontside and a backside opposite the frontside and attached to an electrically insulating backplane. A trench isolation pattern partitions the semiconductor layer into electrically isolated isles on the electrically insulating backplane. A first metal layer having base and emitter electrodes is positioned on the semiconductor layer backside. A patterned second metal layer providing cell interconnection and connected to the first metal layer by via plugs is positioned on the backplane.

Abstract translation: 根据所公开的主题的一个方面，提供了一种单片式太阳能电池。 该太阳能电池包括具有光接收正面的半导体层和与正面相对并且附接到电绝缘背板的背面。 沟槽隔离图案将半导体层分隔成电绝缘背板上的电隔离岛。 具有基极和发射极电极的第一金属层位于半导体层背面上。 提供电池互连且通过通孔插塞连接到第一金属层的图案化的第二金属层位于背板上。

公开(公告)号：WO2012135395A3

公开(公告)日：2013-02-07

申请号：PCT/US2012031043

申请日：2012-03-28

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  KAPUR PAWAN ,  STALCUP THOM ,  WANG DAVID XUAN-QI ,  KAMIAN GEORGE D ,  MANTEGHI KAMRAN ,  SU YEN-SHENG ,  ANBALAGAN PRANAV ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  WORWAG WOJCIECH

Inventor： MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  KAPUR PAWAN ,  STALCUP THOM ,  WANG DAVID XUAN-QI ,  KAMIAN GEORGE D ,  MANTEGHI KAMRAN ,  SU YEN-SHENG ,  ANBALAGAN PRANAV ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  WORWAG WOJCIECH

IPC: H01L31/042 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1892 ,  Y02E10/547

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepeg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepeg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepeg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepeg backplane.

Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图形，将预制电路背板连接到基极和发射电极的交错图案，在预制电路背板上形成提供对第一层 的导电金属，并且在所述预制底板的背面上沉积第二导电金属层，通过所述预制底板中的所述孔与所述第一导电金属层形成电互连。

公开(公告)号：WO2011150397A3

公开(公告)日：2012-04-05

申请号：PCT/US2011038444

申请日：2011-05-27

Applicant: SOLEXEL INC ,  RANA VIRENDRA V ,  LIANG JIAN JUN ,  ANBALAGAN PRANAV ,  MOSLEHI MEHRDAD M

Inventor： RANA VIRENDRA V ,  LIANG JIAN JUN ,  ANBALAGAN PRANAV ,  MOSLEHI MEHRDAD M

IPC: H01L31/18 ,  H01L31/042

CPC classification number: H01L31/0682 ,  B23K26/0624 ,  B23K26/08 ,  B23K26/389 ,  B23K26/40 ,  B23K2201/36 ,  B23K2203/172 ,  B23K2203/40 ,  B23K2203/50 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

Abstract translation: 公开了用于生产各种类型的异质结和同质结太阳能电池的激光加工方案。 这些方法包括基极和发射极接触开口，选择性掺杂和金属烧蚀。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光加工方案。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或通过外延沉积工艺制造的晶体硅衬底，其是平面的或纹理的/三维的。 这些技术非常适合于薄晶体半导体，包括薄晶体硅薄膜。

公开(公告)号：WO2011133965A3

公开(公告)日：2012-02-02

申请号：PCT/US2011033706

申请日：2011-04-23

Applicant: SOLEXEL INC ,  DESHPANDE ANAND ,  RICOLCOL RAFAEL ,  SEUTTER SEAN ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M

Inventor： DESHPANDE ANAND ,  RICOLCOL RAFAEL ,  SEUTTER SEAN ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/042

CPC classification number: H01L31/02167 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: The disclosed subject matter provides a method and structure for obtaining ultra-low surface recombination velocities from highly efficient surface passivation in crystalline silicon substrate- based solar cells by utilizing a bi-layer passivation scheme which also works as an efficient ARC. The bi-layer passivation consists of a first thin layer of wet chemical oxide or a thin hydrogenated amorphous silicon layer. A second layer of amorphous hydrogenated silicon nitride film is deposited on top of the wet chemical oxide or amorphous silicon film. This deposition is then followed by annealing to further enhance the surface passivation.

Abstract translation: 所公开的主题提供了一种用于通过利用也可用作有效ARC的双层钝化方案从基于晶体硅衬底的太阳能电池中的高效表面钝化获得超低表面复合速度的方法和结构。 双层钝化由湿化学氧化物的第一薄层或薄氢化非晶硅层构成。 第二层无定形氢化氮化硅膜沉积在湿化学氧化物或非晶硅膜的顶部。 然后进行该沉积，然后进行退火以进一步增强表面钝化。

公开(公告)号：WO2009026240A1

公开(公告)日：2009-02-26

申请号：PCT/US2008073499

申请日：2008-08-18

Applicant: SOLEXEL INC ,  WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M ,  NAG SOMNATH

Inventor： WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M ,  NAG SOMNATH

IPC: B05D1/36 ,  B05D5/00 ,  H01L21/00

CPC classification number: B01D1/22 ,  H01L21/02617 ,  H01L21/6715 ,  H01L22/12 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/1872 ,  H01L31/1892 ,  H01L31/202 ,  H05K1/0284 ,  H05K3/046 ,  H05K3/1258 ,  H05K3/207 ,  H05K2201/09036 ,  H05K2201/09045 ,  H05K2203/0126 ,  H05K2203/0528 ,  H05K2203/308 ,  Y02E10/50 ,  Y02P70/521

Abstract: Methods here disclosed provide for selectively coating the top surfaces or ridges of a 3-D substrate while avoiding liquid coating material wicking into micro cavities on 3-D substrates. The substrate includes holes formed in a three-dimensional substrate by forming a sacrificial layer on a template. The template includes a template substrate with posts and trenches between the posts. The steps include subsequently depositing a semiconductor layer and selectively etching the sacrificial layer. Then, the steps include releasing the semiconductor layer from the template and coating the 3-D substrate using a liquid transfer coating step for applying a liquid coating material to a surface of the 3-D substrate. The method may further include coating the 3-D substrate by selectively coating the top ridges or surfaces of the substrate. Additional features may include filling the micro cavities of the substrate with a filling material, removing the filling material to expose only the substrate surfaces to be coated, coating the substrate with a layer of liquid coating material, and removing said filling material from the micro cavities of the substrate.

Abstract translation: 本文公开的方法提供了选择性涂覆3-D衬底的顶表面或脊，同时避免液体涂层材料芯吸到3-D衬底上的微空腔中。 衬底包括通过在模板上形成牺牲层而形成在三维衬底中的孔。 该模板包括一个模板衬底，在柱子之间有柱子和沟槽。 该步骤包括随后沉积半导体层并选择性地蚀刻牺牲层。 然后，这些步骤包括从模板释放半导体层并且使用液体转移涂覆步骤涂覆3D基板，以将液体涂覆材料涂覆到3D基板的表面。 该方法可以进一步包括通过选择性地涂覆衬底的顶脊或表面来涂覆3D衬底。 另外的特征可以包括用填充材料填充基板的微腔，除去填充材料以仅暴露待涂覆的基板表面，用液体涂层材料涂覆基板，并且从微腔除去所述填充材料 的底物。

公开(公告)号：WO2014169292A3

公开(公告)日：2015-01-29

申请号：PCT/US2014034054

申请日：2014-04-14

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M

Inventor： MOSLEHI MEHRDAD M

IPC: H02S40/30 ,  G05F1/67 ,  H02S50/10

CPC classification number: H01L27/1421 ,  H01L31/02021 ,  H01L31/022441 ,  H01L31/044 ,  H01L31/048 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/1896 ,  H02J3/385 ,  H02S40/30 ,  H02S40/32 ,  Y02B10/10 ,  Y02E10/58

Abstract: A solar photovoltaic module laminate for electric power generation is provided. The module comprises a plurality of solar cells embedded within the module laminate and electrically interconnected to form at least one string of electrically interconnected solar cells within said module laminate. And at least one remote-access module switch (RAMS) power electronic circuit embedded within the module laminate electrically interconnected to and powered with said at least one string of electrically interconnected solar cells and serving as a remote-controlled module power delivery gate switch.

Abstract translation: 提供了用于发电的太阳能光伏组件层压板。 模块包括嵌入在模块层叠体内的多个太阳能电池，并且电互连以在所述模块层叠体内形成至少一排电互连的太阳能电池。 并且至少一个远程访问模块开关（RAMS）电力电子电路嵌入在所述模块叠层内，电互连到所述至少一个电互连太阳能电池串并由其供电，并且用作遥控模块电力输送门开关。

公开(公告)号：WO2013055307A3

公开(公告)日：2013-10-24

申请号：PCT/US2011046873

申请日：2011-08-05

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  WANG DAVID XUAN-QI ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  TOR SAM TONE ,  CALCATERRA ANTHONY

Inventor： MOSLEHI MEHRDAD M ,  WANG DAVID XUAN-QI ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  TOR SAM TONE ,  CALCATERRA ANTHONY

IPC: H01L31/042 ,  H01L31/05 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L31/02008 ,  H01L31/02013 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/50

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the interdigitated pattern, and attaching a backplane having a second interdigitated pattern of base electrodes and emitter electrodes at the conductive emitter and base plugs to form electrical interconnects.

Abstract translation: 描述了与用于背接触太阳能电池的背板相关的制造方法和结构，其提供太阳能电池基底增强和电互连。 该方法包括在半导体衬底的背侧表面上沉积交叉指型的基极和发射极电极图案，在交叉指型图案上形成导电发射极插塞和基极插塞，并将具有第二叉指图案的基极和发射极电极 在导电发射极和基极插头处形成电互连。

公开(公告)号：WO2012040688A3

公开(公告)日：2012-08-16

申请号：PCT/US2011053183

申请日：2011-09-24

Applicant: SOLEXEL INC ,  YONEHARA TAKAO ,  TAMILMANI SUBRAMANIAN ,  KRAMER KARL-JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  MIYAJI YASUHIRO ,  HAYASHI TOKUYUKI ,  INAHARA TAKAMITSU

Inventor： YONEHARA TAKAO ,  TAMILMANI SUBRAMANIAN ,  KRAMER KARL-JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  MIYAJI YASUHIRO ,  HAYASHI TOKUYUKI ,  INAHARA TAKAMITSU

IPC: H01L21/306

CPC classification number: C25F3/12 ,  C25D11/005 ,  C25D11/32 ,  C25D17/001 ,  C25D17/06 ,  C25F7/00

Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

Abstract translation: 本公开使得可以高生产率地制造多孔半导体层（由单层或多层多孔半导体制成，例如多孔硅，包括单孔隙或多孔隙层）。 一些应用包括用于管芯分离和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅（使用具有最佳孔隙率及其随后的氧化的多孔硅形成）的MEMS分离和牺牲层的制造。 此外，本公开适用于光伏，MEMS的一般领域，包括传感器和致动器，独立或与集成半导体微电子学，半导体微电子学芯片和光电子集成。

公开(公告)号：WO2011072161A3

公开(公告)日：2011-11-10

申请号：PCT/US2010059759

申请日：2010-12-09

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  VAN KERSCHAVER EMMANUEL

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  VAN KERSCHAVER EMMANUEL

IPC: H01L31/042 ,  H01L31/0216

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

Abstract translation: 提供背接触背结太阳能电池和制造方法。 该背接触背结太阳能电池包括具有光捕获前表面的衬底，该光捕获前表面具有钝化层，掺杂的基极区域以及具有与掺杂的基极区域相反的极性的掺杂的背侧发射极区域。 发射体上的背面钝化层和图案化反射层形成光捕获背面镜。 叉指金属化图案位于太阳能电池的背面，并且永久增强为电池提供支撑。