公开(公告)号：JPS62284331A

公开(公告)日：1987-12-10

申请号：JP12845686

申请日：1986-06-02

Applicant: NEC CORP

Inventor： FUJIWARA MASAHIKO

IPC: G02F1/025 ,  G02F1/015

Abstract: PURPOSE:To reduce the size of the constitution and to obtain a high extinction ratio by laminating a multiple quantum well sandwiched by 1st and 2nd semiconductor layers on a substrate having specific crystal structure and impressing an electric field of a prescribed direction thereto. CONSTITUTION:The semiconductor layers of N -GaAs2, N -AlGaAs3, P - AlGaAs5 and P -GaAs6 which are different in band gaps to sandwich the multiple quantum well guide 4 are laminated by an epitaxial method on the N -GaAs substrate 1 of (110) of the semiconductor belonging to a crystal point group (-43m) by which the optical modulator is formed. The electric field of the (11) direction is applied to the layer 4 when a reverse bias voltage is impressed between electrodes 7 and 9. An electrooptic effect and electric absorption effect are thereby acted and rotation is generated in the plane of polarization of incident light by the electrooptic effect as the substrate 1 is of the (110). The increased length of the absorption end is generated by the electric field absorption effect. The high extinction ratio is, therefore, obtd. by the small-sized constitution which does not required polarizers.

公开(公告)号：JPS62283673A

公开(公告)日：1987-12-09

申请号：JP12844986

申请日：1986-06-02

Applicant: NEC CORP

Inventor： FUJIWARA MASAHIKO

IPC: H01L21/20 ,  H01L21/337 ,  H01L29/80 ,  H01L29/808

Abstract: PURPOSE:To simply obtain a manufacture of a field effect transistor in high productivity by forming a selectively growing mask except a part to become a gate on an active layer on a semiconductor substrate, selectively growing a semiconductor layer of conductivity type different from that of the active layer so that a section becomes a reverse mesa shape, depositing a gate electrode metal and then removing the mask. CONSTITUTION:An n-type InGaAs active layer 12 is grown on a 100 semi- insulating InP substrate (Fe-dope) 11. Then, an SiO2 film 20 is formed on an whole n-type InGaAs layer, and a gap is formed in 011 direction. When a p type InGaAs is grown by a halide VPE method on the substrate, a reverse mesa shape p type InGaAs stripe 13 is obtained in the shape slightly riding on the SiO2. Then, a metal (gate, metal) 14 to become a gate electrode is deposited on the whole wafer, but no metal is attached to the mesa wall surface. Accordingly, when the film 20 is removed with HF, a gate metal on the film 20 is removed together, and an electrode is formed only on a gate. Thereafter, metal (Ti/Au) to become source, drain electrode 15 is deposited on the whole surface. Thus, an etching step necessary to precise control can be eliminated.

公开(公告)号：JPS61176913A

公开(公告)日：1986-08-08

申请号：JP1737485

申请日：1985-01-31

Applicant: NEC CORP

Inventor： FUJIWARA MASAHIKO

IPC: G02B6/12 ,  G02F1/31 ,  G02F1/313 ,  H01L27/15 ,  H01S5/00 ,  H01S5/026

Abstract: PURPOSE:To integrate numerous optical switches on one substrate, by constituting at least one of three channel waveguides in a gain guiding type waveguide which utilizes the gain difference between a section, into which carrier injection is performed, and non-injected section when partial carrier injection is performed into an active layer of a semiconductor material. CONSTITUTION:In a waveguide constitution of a gain guiding type which is constituted by closely arranging plural, for example, three channel waveguides having the same phase constant in parallel with each other at regular intervals, three channel waveguides 20a, 20b, and 20c are formed just below the (p) regions 9a, 9b, and 9c of an active layer 5 by the distribution of gains in the active layer 5, when forward bias is added between electrodes 11a, 11b, and 11c and an electrode 10 and the electrodes are biased to the vicinity of a threshold. That is to say, when electric current injection is performed into the electrodes 11a, 11b, and 11c, an 1-input and 3-output optical switch of the three channel waveguides is obtained.

公开(公告)号：JPS61170707A

公开(公告)日：1986-08-01

申请号：JP1097185

申请日：1985-01-25

Applicant: NEC CORP

Inventor： FUJIWARA MASAHIKO

IPC: G02B6/122 ,  G02B6/12 ,  G02F1/03 ,  G02F1/05 ,  H01L27/15

Abstract: PURPOSE:To decrease the absorption loss of light and to make possible the relative easy realization of various functions by providing patterned electrodes and optical waveguides for optical connection between optoelectrical function elements on the surface. CONSTITUTION:The 1st, 2nd and 3rd glass layers are successively formed by a CVD method on an Si substrate 1 and are removed except an optical branching device 8 and coupling device 9 by a photolithographic method. Electrodes 2, 3 for the optoelectric function elements, lead-out wires 4, 5, electrodes 6, 7 for bonding and an electrode 10 for grounding are formed of Cr and Sn. Since high resistance Si is used as the substrate in this stage, the sepn. between the electrodes is made possible by patterning the electrodes for the optoelectrical function elements. The optoelectrical function elements are fixed to such electrodes 2, 3 by thermal welding or ultrasonic press welding, etc. The hybrid optical integrated circuit is then formed.

公开(公告)号：JPS617740A

公开(公告)日：1986-01-14

申请号：JP12872084

申请日：1984-06-22

Applicant: Nec Corp

Inventor： FUJIWARA MASAHIKO

IPC: H04B10/27 ,  G02B6/28 ,  H01L31/14 ,  H01S5/00 ,  H04B10/00 ,  H04B10/2507 ,  H04Q3/52 ,  H04Q11/00

Abstract: PURPOSE: To miniaturize and integrate an optical switching circuit and to switch the circuit at a high-speed with a low stroke, by constituting the optical switching circuit having a function which passes lights under a turned on condition and does not pass lights under a turned off condition of a semiconductor laser having a differentiated gain characteristic.
CONSTITUTION: Optical signals from the input light transmitting paths 3a and 3b of an optical switching circuit are respectively coupled with star couplers 41a and 41b and branched into four lights. Optical signals from the couplers 41a and 41b are inputted in optical gate switches 42a and 42b and 42c and 42d. A switch controlling circuit 46 is connected with each switch 42a, 42b, 42c, and 42d. The switches 42a, 42b, 42c, and 42d using semiconductor lasers having differentiation characteristics are controlled by means of the control current of the control circuit 46. Then the switching circuit is miniaturized and integrated and switched at a high speed with a low stroke.
COPYRIGHT: (C)1986,JPO&Japio

Abstract translation: 目的：为了小型化和集成光开关电路，并以低速度高速切换电路，通过构成光开关电路具有在开启状态下使光通过的功能，并且不会在转动下通过光 具有差分增益特性的半导体激光器的关闭状态。 构成：来自光开关电路的输入光传输路径3a和3b的光信号分别与星形耦合器41a和41b耦合并分支成四个灯。 来自耦合器41a和41b的光信号被输入到光栅开关42a和42b和42c和42d中。 开关控制电路46与各开关42a，42b，42c，42d连接。 使用具有微分特性的半导体激光器的开关42a，42b，42c和42d通过控制电路46的控制电流来控制。然后，开关电路被小型化并集成并以低冲程高速切换。

公开(公告)号：JPS59211339A

公开(公告)日：1984-11-30

申请号：JP8528983

申请日：1983-05-16

Applicant: Nec Corp

Inventor： FUJIWARA MASAHIKO ,  KONDOU MITSUKAZU ,  OOTA YOSHINORI

IPC: H04B10/29 ,  H01L31/02 ,  H04B10/00 ,  H04B10/27

CPC classification number: H04B10/2507

Abstract: PURPOSE:To decrease inertion losses and to quicken the response speed by inserting an active waveguide path having P-N junction in an optical transmission line and amplifying propagated light with a forward bias normally to extract the optical signal as an electric signal at a reverse bias. CONSTITUTION:Laser light 1 for signal transmission is coupled with the active waveguide device 3 having the P-N junction via an optical system 2. In applying a forward bias across the P-N junction of the waveguide path 3, the laser light 1 is amplified and irradiated from the waveguide path 3 ad irradiated light 4. On the other hand, in applying a reverse bias across the waveguide path 3, the laser light 1 is absorbed while being travelled through the active waveguide path 3 and extracted externally as a light current. Thus, the light is amplified and irradiated to the next stage or the light is extracted as the electric signal by changing over the bias state of the waveguide path 3 in this way.

Abstract translation: 目的：通过将具有P-N结的有源波导路径插入到光传输线中并通过正向偏置正常放大传播的光以减少光信号作为反向偏压的电信号，来降低衰减损耗并加快响应速度。 构成：用于信号传输的激光1与经由光学系统2的具有PN结的有源波导器件3耦合。在波导路径3的PN结上施加正向偏压时，激光1被放大并从 波导路径3照射光4.另一方面，在波导路径3上施加反向偏压时，激光1在行进通过有源波导路径3的同时被吸收并作为光电流从外部提取。 因此，通过以这种方式改变波导路径3的偏置状态，光被放大并照射到下一级，或者通过改变波导路径3的偏置状态来提取光作为电信号。

公开(公告)号：JPS59211023A

公开(公告)日：1984-11-29

申请号：JP8529283

申请日：1983-05-16

Applicant: Nec Corp

Inventor： FUJIWARA MASAHIKO ,  KONDOU MITSUKAZU ,  OOTA YOSHINORI

IPC: G02B6/12 ,  G02F1/015 ,  G02F1/31 ,  G02F1/313 ,  H01S3/063 ,  H03K17/78

CPC classification number: H01S3/063

Abstract: PURPOSE:To obtain an information signal as an electric signal in a branch to be connected, by reverse-biasing only an active waveguide corresponding to an output branch to be connected of an lX(m) optical switch, and forward-biasing the remaining waveguides. CONSTITUTION:Active waveguides (20a, 20c) (20b, 20d) corresponding to the number of output branches are placed in front of two input optical transmission lines 3a, 3b, respectively. In case each active waveguide is all biased in the forward direction, an optical signal outputted from the input light transmission line is amplified by each active waveguide and transmitted as a light. The active waveguide 20c, 20b are connected to reverse-biasing circuits 25a, 25b provided with a photoelectric detecting system, and when other active waveguides 20a, 20d are biased in the forward direction, the optical signal from the input light transmission line 3a is amplified by the active waveguide 20a, and made incident to the active waveguide 20c, but is absorbed in its waveguide, and a photocurrent is obtained in an output branch 8b by the reverse-biasing circuit 25b.

Abstract translation: 目的：通过反向偏置仅与一个lX（m）光开关连接的输出分支相对应的有源波导，并且将剩下的波导进行正向偏置来获得要连接的分支中的电信号作为电信号的信息信号 。 构成：对应于输出分支数量的有源波导（20a，20c）（20b，20d）分别放置在两个输入光传输线3a，3b的前面。 在每个有源波导全部向正方向偏置的情况下，从输入光传输线输出的光信号被每个有源波导放大并作为光传输。 有源波导20c，20b连接到设置有光电检测系统的反向偏置电路25a，25b，当其它有源波导20a，20d向正方向偏置时，来自输入光传输线3a的光信号被放大 通过有源波导20a并入射到有源波导20c，但被吸收在其波导中，并且通过反向偏置电路25b在输出支路8b中获得光电流。

公开(公告)号：JPS5929483A

公开(公告)日：1984-02-16

申请号：JP13936282

申请日：1982-08-11

Applicant: Nec Corp

Inventor： FUJIWARA MASAHIKO

IPC: G02B6/122 ,  H01L27/14 ,  H01L27/15 ,  H01S5/00 ,  H01S5/026

CPC classification number: H01S5/026

Abstract: PURPOSE:To enable a passive optical guide and an active optical guide to connect with each other highly efficiently not interfering with a device on the passive optical guide and the operation of the active optical guide by a method wherein the active optical guide and the passive optical guide are connectedly formed aligning thier optical axes removing the connected part of each optical guide to form the ends opposing to each other almost in parallel. CONSTITUTION:An InGaAsP active optical guide layer 3, an InP clad layer 4 are formed on InP substrate 1 through the intermediary of an InP buffer layer 2 and said layers 3, 4 are selectively mesaetched to be crystal grown again thereon forming the second InGaAsP passive optical guide layer 5 of the low optical absorption loss composition and the second InP clad layer 6. Then the connected part of the active optical guide layer 3 and the passive optical guide 5 is removed by etching to form the ends of the active optical guide and the passive optical guide. In such a constitution, the light generated or amplified by the active optical guid may be connected to the passive optical guide at interval of extremely minute gap removed by etching.

Abstract translation: 目的：使无源光导和有源光导相互高效地连接，不会干扰无源光导上的器件和主动光导的操作，其中主动光​​导和无源光 引导件连接地形成对准其光轴，从而移除每个光导的连接部分，以形成彼此大致平行的端部。 构成：InGaAsP有源光导层3，InP衬底1通过InP缓冲层2的中间形成InP覆盖层4，并且所述层3,4选择性地刻蚀以再次晶体生长，形成第二InGaAsP被动 低光吸收损耗组合物的光导层5和第二InP包覆层6.然后通过蚀刻去除有源光导层3和无源光导5的连接部分以形成有源光导的端部， 被动光导。 在这种结构中，通过有源光学引导件生成或放大的光可以通过蚀刻去除非常微小间隙的间隔而连接到无源光导。

公开(公告)号：JPS5923303A

公开(公告)日：1984-02-06

申请号：JP13261982

申请日：1982-07-29

Applicant: Nec Corp

Inventor： KONDOU MITSUKAZU ,  FUJIWARA MASAHIKO

IPC: G02B6/12 ,  G02F1/01 ,  G02F1/313 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/04 ,  H01L27/06 ,  H01L29/78 ,  H01L29/786

CPC classification number: G02F1/313

Abstract: PURPOSE:To obtain a composite optical integrated device with which control is easy and the increase in speed is simple by making the device controllable with the input electrical signal of a low voltage and decreasing the number of wirings between the same and an external part. CONSTITUTION:Optical waveguides 2-4 of titanium are formed on a CiNbO3 crystal substrate 1, and there are directional coupling 2X2 optical switching elements in the waveguides 2, 3 and a similar element 7 between the elements 5 and 6 thereby constituting a 3X3 matrix optical switch. Thin film electric circuits 15-17 connected to the control electrodes of the elements 5-7 are further formed on the same substrate 1. The incident light of the waveguides 3-4 can be emitted from any of exit terminals 12-14 by an arbitrary combination of respectively 0% or 100% degrees of coupling the elements 5-7. Since the optical control device and the semiconductor thin film electric circuits are provided on the same substrate 1, the device is controllable with the external input signal of a low voltage and the number of wirings between the same and an external electric circuit for control is decreased.

Abstract translation: 目的：通过使用低电压的输入电信号可控制器件并减少相同和外部之间的布线数量，获得易于控制的复合光学集成器件，并且速度的提高变得简单。 构成：在CiNbO3晶体基板1上形成钛的光波导2-4，并且在波导2,3中有定向耦合2X2光开关元件，以及元件5和6之间的类似元件7，由此构成3X3矩阵光学 开关。 连接到元件5-7的控制电极的薄膜电路15-17还形成在同一基板1上。波导3-4的入射光可以从出口端子12-14中的任何一个射出任意的 组合分别为0％或100％的耦合元件5-7。 由于光学控制装置和半导体薄膜电路设置在同一基板1上，所以可以利用低电压的外部输入信号来控制该装置，并且该装置与用于控制的外部电路之间的布线数量减少 。

公开(公告)号：JPH07170540A

公开(公告)日：1995-07-04

申请号：JP31620493

申请日：1993-12-16

Applicant: NEC CORP

Inventor： FUJIWARA MASAHIKO

IPC: G02B26/08 ,  H04B10/00 ,  H04B10/27 ,  H04L12/28 ,  H04L12/931 ,  H04Q3/00 ,  H04Q3/52 ,  H04Q11/04 ,  H04B10/02

Abstract: PURPOSE:To reduce the number of optical receivers and buffer memories to prepare for the output side by adopting the configuration that the connection state to output terminal of mX1 optical switches are continuously switched in the unit of mini-slots being 1-bit/m of an input signal synchronously with each other through the driving of the optical switches. CONSTITUTION:A cell signal being an electric signal is received by m-sets of input terminals 1-1 to 1-m. Each of discrimination circuits 2-1 to 2-m decodes a desired destination of each cell signal and it is converted into an optical signal by each of optical transmitters 3-1 to 3-m and the resulting signal is outputted. Each of 1Xn switches 4-1 to 4-m connecting to each optical transmitter connects the input signal to one desired output terminal among n-sets of output terminals based on the result of discrimination of the discrimination circuits 2-1 to 2-m. An optical receiver (7-1 or the like) is placed to each output terminal of each of mX1 optical switches (5-1 or the like) and converts the optical signal into an electric signal, and it is stored in a buffer memory (8-1 or the like). Thus, one hardware is enough for each mX1 optical switch.