公开(公告)号：US10101473B2

公开(公告)日：2018-10-16

申请号：US15606071

申请日：2017-05-26

Applicant: Nuctech Company Limited

Inventor： Lan Zhang ,  Yingshuai Du ,  Bo Li ,  Zonggui Wu ,  Jun Li ,  Xuepeng Cao ,  Haifan Hu ,  Jianping Gu ,  Guangming Xu ,  Bicheng Liu

IPC: G01T1/24 ,  H01L31/02 ,  H05K1/18 ,  H05K1/02 ,  H05K1/11 ,  H01L31/119 ,  H01L31/0296

Abstract: The present disclosure provides a semiconductor detector. The semiconductor detector comprises: a detector crystal including a crystal body, an anode and a cathode; a field enhance electrode for applying a voltage to the detector crystal; an insulating material disposed between the field enhanced electrode and a surface of the detector crystal. The semiconductor detector further comprises a field enhanced electrode circuit board having a bottom connection layer in contact with the surface of the detector crystal and a top layer opposite to the bottom connection layer, wherein the top layer is connected to a high voltage input terminal of the semiconductor detector, and an insulating material is provided between the bottom connection layer and the detector surface of the detector crystal.

公开(公告)号：US10670743B2

公开(公告)日：2020-06-02

申请号：US15606394

申请日：2017-05-26

Applicant: NUCTECH COMPANY LIMITED

Inventor： Lan Zhang ,  Yingshuai Du ,  Bo Li ,  Zonggui Wu ,  Jun Li ,  Xuepeng Cao ,  Haifan Hu ,  Jianping Gu ,  Guangming Xu ,  Bicheng Liu

IPC: G01T1/24 ,  H04N5/378 ,  H04N5/369 ,  G01T1/29 ,  H01L31/0296 ,  H01L31/08 ,  H01L31/18

Abstract: A semiconductor detector and a packaging method thereof. The semiconductor detector includes: a cathode circuit board including a read out chip, a high voltage side top layer of the cathode circuit board, a bottom connection layer of the cathode circuit board and a dielectric filled between the high voltage side top layer and the bottom connection layer, wherein the high voltage side top layer is connected to the bottom connection layer through a via hole; and a detector crystal including a crystal body, an anode and a cathode, the anode is connected to the read out chip of the cathode circuit board, the high voltage side top layer is connected to an input terminal of the semiconductor detector and the bottom connection layer directly contacts the cathode of the detector crystal to connect the cathode to the cathode circuit board.

公开(公告)号：US10388818B2

公开(公告)日：2019-08-20

申请号：US15625473

申请日：2017-06-16

Applicant: NUCTECH COMPANY LIMITED

Inventor： Lan Zhang ,  Yingshuai Du ,  Bo Li ,  Zonggui Wu ,  Jun Li ,  Xuepeng Cao ,  Haifan Hu ,  Jianping Gu ,  Guangming Xu ,  Bicheng Liu

IPC: H01L31/118 ,  G01T1/24 ,  G01T1/02 ,  H01L27/144 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032

Abstract: There is provided a semiconductor detector. According to an embodiment, the semiconductor detector may include a semiconductor detection material including a first side and a second side opposite to each other. One of the first side and the second side is a ray incident side that receives incident rays. The detector may further include a plurality of pixel cathodes disposed on the first side and a plurality of pixel anodes disposed on the second side. The pixel anodes and the pixel cathodes correspond to each other one by one. The detector may further include a barrier electrode disposed on a periphery of respective one of the pixel cathodes or pixel anodes on the ray incident side. According to the embodiment of the present disclosure, it is possible to effectively suppress charge sharing between the pixels and thus to improve an imaging resolution of the detector.