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    DETECTOR, AND DETECTING SYSTEM AND METHOD FOR DIVIDING ENERGY REGIONS INTELLIGENTLY
    4.
    发明申请
    DETECTOR, AND DETECTING SYSTEM AND METHOD FOR DIVIDING ENERGY REGIONS INTELLIGENTLY 审中-公开

    公开(公告)号：US20180059264A1

    公开(公告)日：2018-03-01

    申请号：US15602478

    申请日：2017-05-23

    Applicant: Nuctech Company Limited

    Inventor： Lan Zhang ,  Yingshuai Du ,  Bo Li ,  Zonggui Wu ,  Jun Li ,  Xuepeng Cao ,  Haifan Hu ,  Jianping Gu ,  Guangming Xu ,  Bicheng Liu

    IPC: G01T1/24 ,  G06T7/70 ,  G06T7/11

    CPC classification number: G01T1/241 ,  G06T7/11 ,  G06T7/70 ,  G06T2207/10116

    Abstract: The disclosure provides a detector, and a detecting system and method for dividing energy regions intelligently. The detecting method may comprise: collecting, by a detector, rays transmitted through a detected object and generating a detection signal according to the rays; wherein each column of pixels of the detector comprises one class-A electrode and a plurality of class-B electrodes, and the class-A electrode and the class-B electrodes are arranged sequentially in a moving direction of the detected object, such that the rays transmitted through the detected object firstly enter into the class-A electrode and then into the class-B electrodes; obtaining image data of the detected object based on the detection signal corresponding to the class-A electrode, and estimating a material component of the detected object based on the image data; adjusting one or more thresholds for dividing the energy regions according to the estimated material component; and determining energy regions to which the detection signal corresponding to the class-B electrodes belongs, according to the adjusted one or more thresholds, and calculating a number of signals in each energy region, so as to obtain the image data of the detected object and determine components of the detected object accurately.

    Method and apparatus for processing signals of semiconductor detector
    6.
    发明授权
    Method and apparatus for processing signals of semiconductor detector 有权

    公开(公告)号：US09835739B2

    公开(公告)日：2017-12-05

    申请号：US14800635

    申请日：2015-07-15

    Applicant: TSINGHUA UNIVERSITY ,  NUCTECH COMPANY LIMITED

    Inventor： Lan Zhang ,  Yulan Li ,  Yuanjing Li ,  Jianqiang Fu ,  Yingshuai Du ,  Wei Zhang ,  Xuming Ma ,  Jun Li

    IPC: G01T1/24 ,  H04N5/32

    CPC classification number: G01T1/247 ,  G01T1/241 ,  H04N5/32

    Abstract: The present invention provides a method and apparatus for processing signals of a semiconductor detector, including: acquiring a relationship of a time difference between anode and cathode signals of the semiconductor detector with an anode signal amplitude; obtaining an optimal data screening interval according to the relationship of the time difference between anode and cathode signals of the semiconductor detector with the anode signal amplitude, wherein the optimal data screening interval is an interval where the time difference between the anode and cathode signals is greater than 50 ns; and screening and processing the collected data according to the optimal data screening interval when the semiconductor detector collects data. The present invention better overcomes the inherent crystal defects of the detector, reduces the effect of background noise, increases the energy resolution of the cadmium zinc telluride detector under room temperature, and improves the peak-to-compton ratio.

    SEMICONDUCTOR DETECTOR
    7.
    发明申请
    SEMICONDUCTOR DETECTOR 有权
    半导体检测器

    公开(公告)号：US20140319635A1

    公开(公告)日：2014-10-30

    申请号：US14152332

    申请日：2014-01-10

    Applicant: TSINGHUA UNIVERSITY ,  NUCTECH COMPANY LIMITED

    Inventor： Yuanjing Li ,  Lan Zhang ,  Yulan Li ,  Yinong Liu ,  Jianqiang Fu ,  Hao Jiang ,  Zhi Deng ,  Tao Xue ,  Wei Zhang ,  Jun Li

    IPC: G01T1/36 ,  G01T3/08

    CPC classification number: G01T1/366 ,  G01T1/241 ,  G01T3/08

    Abstract: The invention provides a semiconductor detector, and the semiconductor detector comprises a semiconductor crystal, a cathode, an anode and at least one ladder electrode; the semiconductor crystal comprises a top surface, a bottom surface and at least one side; the cathode, the anode and the ladder electrode are conductive thin films deposited on a surface of the semiconductor crystal; the cathode is disposed on the bottom surface of the semiconductor crystal, the anode is disposed on the top surface of the semiconductor crystal, the ladder electrode is disposed on the at least one side of the semiconductor crystal; and the ladder electrode comprises a plurality of sub-electrodes. As compared to the prior art, the semiconductor detector can improve the energy resolution.

    Abstract translation: 本发明提供一种半导体检测器，该半导体检测器包括半导体晶体，阴极，阳极和至少一个梯形电极; 半导体晶体包括顶表面，底表面和至少一个侧面; 阴极，阳极和梯形电极是沉积在半导体晶体表面上的导电薄膜; 阴极设置在半导体晶体的底表面上，阳极设置在半导体晶体的顶表面上，梯形电极设置在半导体晶体的至少一个侧面上; 并且梯形电极包括多个子电极。 与现有技术相比，半导体检测器可以提高能量分辨率。

    Coplanar electrode photodiode array and manufacturing method thereof
    9.
    发明授权
    Coplanar electrode photodiode array and manufacturing method thereof 有权

    公开(公告)号：US10411051B2

    公开(公告)日：2019-09-10

    申请号：US15580848

    申请日：2016-08-31

    Applicant: Nuctech Company Limited

    Inventor： Lan Zhang ,  Yuanjing Li ,  Yinong Liu ,  Haifan Hu ,  Jun Li

    IPC: H01L27/144 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/18

    Abstract: A coplanar electrode photodiode array and a manufacturing method thereof are disclosed. On a top side of a low resistance rate substrate, a high resistance epitaxial silicon wafer, a first conductive type heavily doped region and a second conductive type doped region are formed, which are a cathode and an anode of a photodiode respectively. The structure includes a trench structure formed between the anode and the cathode, the trench structure may be form by a gap, an insulating material, a conductive structure, a reflective material, and ion implantation, and also includes a first conductive type heavily doped region, an insulating isolation layer or a conductive structure with an insulating layer, and the like formed under the anode and the cathode.

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