公开(公告)号：US20190234870A1

公开(公告)日：2019-08-01

申请号：US16232318

申请日：2018-12-26

Applicant: NUCTECH COMPANY LIMITED

Inventor： Ziran ZHAO ,  Haifan Hu ,  Xuming Ma ,  Yingxin Wang

IPC: G01N21/3581 ,  G01J1/44

CPC classification number: G01N21/3581 ,  G01J1/0411 ,  G01J1/42 ,  G01J1/44 ,  G01J2001/4466 ,  G01J2001/448

Abstract: The present disclosure provides a terahertz detector. The terahertz detector includes a planar array structure that is constituted by a plurality of pixel units, the plurality of pixel units each include N sub pixels and each of the sub pixels includes no more than one signal trigger configured to transform a terahertz signal to an electrical current pulsing signal, and each of the plurality of pixel units detects a signal that is a sum of the electrical current pulsing signals of the N sub pixels, where N is an integer greater than 1.

公开(公告)号：US10295679B2

公开(公告)日：2019-05-21

申请号：US15609476

申请日：2017-05-31

Applicant: NUCTECH COMPANY LIMITED

Inventor： Lan Zhang ,  Yingshuai Du ,  Bo Li ,  Zonggui Wu ,  Jun Li ,  Xuepeng Cao ,  Haifan Hu ,  Jianping Gu ,  Guangming Xu ,  Bicheng Liu

IPC: G01T1/24 ,  H01L31/0224 ,  H01L31/032

Abstract: A semiconductor may include a semiconductor detection material including a first side and a second side opposite to each other, a cathode disposed on the first side, and an anode disposed on the second side. The anode includes an array of pixel anodes defining detection pixels of the semiconductor detector, and intermediate anodes disposed between adjacent ones of the pixel anodes. According to an embodiment of the present disclosure, it is possible to achieve signal correction to improve the energy resolution and the signal-to-noise ratio of the detector.

公开(公告)号：US20180059269A1

公开(公告)日：2018-03-01

申请号：US15591165

申请日：2017-05-10

Applicant: Nuctech Company Limited

Inventor： Lan Zhang ,  Yingshuai Du ,  Bo Li ,  Zonggui Wu ,  Jun Li ,  Xuepeng Cao ,  Haifan Hu ,  Jianping Gu ,  Guangming Xu ,  Bicheng Liu

IPC: G01T1/36

CPC classification number: G01T1/366 ,  G01T1/36

Abstract: The present disclosure provides an apparatus for processing signals for a plurality of energy regions, and a system and method for detecting radiation of a plurality of energy regions. The apparatus for processing signals for a plurality of energy regions may comprise: a first processor, configured to receive a signal from a detector and process the received signal to generate a gated signal, wherein a turn-on period of the gated signal represents magnitude of the received signal; and a second processor, configured to receive the gated signal from the first processor, and determine one of the plurality of energy regions to which the received signal belongs according to the turn-on period of the gated signal, so as to count signals within the determined energy region.

公开(公告)号：US20180059265A1

公开(公告)日：2018-03-01

申请号：US15606394

申请日：2017-05-26

Applicant: NUCTECH COMPANY LIMITED

Inventor： Lan Zhang ,  Yingshuai Du ,  Bo Li ,  Zonggui Wu ,  Jun Li ,  Xuepeng Cao ,  Haifan Hu ,  Jianping Gu ,  Guangming Xu ,  Bicheng Liu

IPC: G01T1/24 ,  H01L31/0296 ,  H01L31/08 ,  H01L31/18

CPC classification number: G01T1/247 ,  G01T1/241 ,  G01T1/2928 ,  H01L31/0296 ,  H01L31/085 ,  H01L31/1832 ,  H04N5/378 ,  H04N5/379

Abstract: A semiconductor detector and a packaging method thereof. The semiconductor detector includes: a cathode circuit board including a read out chip, a high voltage side top layer of the cathode circuit board, a bottom connection layer of the cathode circuit board and a dielectric filled between the high voltage side top layer and the bottom connection layer, wherein the high voltage side top layer is connected to the bottom connection layer through a via hole; and a detector crystal including a crystal body, an anode and a cathode, the anode is connected to the read out chip of the cathode circuit board, the high voltage side top layer is connected to an input terminal of the semiconductor detector and the bottom connection layer directly contacts the cathode of the detector crystal to connect the cathode to the cathode circuit board.

公开(公告)号：US20180059264A1

公开(公告)日：2018-03-01

申请号：US15602478

申请日：2017-05-23

Applicant: Nuctech Company Limited

Inventor： Lan Zhang ,  Yingshuai Du ,  Bo Li ,  Zonggui Wu ,  Jun Li ,  Xuepeng Cao ,  Haifan Hu ,  Jianping Gu ,  Guangming Xu ,  Bicheng Liu

IPC: G01T1/24 ,  G06T7/70 ,  G06T7/11

CPC classification number: G01T1/241 ,  G06T7/11 ,  G06T7/70 ,  G06T2207/10116

Abstract: The disclosure provides a detector, and a detecting system and method for dividing energy regions intelligently. The detecting method may comprise: collecting, by a detector, rays transmitted through a detected object and generating a detection signal according to the rays; wherein each column of pixels of the detector comprises one class-A electrode and a plurality of class-B electrodes, and the class-A electrode and the class-B electrodes are arranged sequentially in a moving direction of the detected object, such that the rays transmitted through the detected object firstly enter into the class-A electrode and then into the class-B electrodes; obtaining image data of the detected object based on the detection signal corresponding to the class-A electrode, and estimating a material component of the detected object based on the image data; adjusting one or more thresholds for dividing the energy regions according to the estimated material component; and determining energy regions to which the detection signal corresponding to the class-B electrodes belongs, according to the adjusted one or more thresholds, and calculating a number of signals in each energy region, so as to obtain the image data of the detected object and determine components of the detected object accurately.

公开(公告)号：US20180059261A1

公开(公告)日：2018-03-01

申请号：US15606071

申请日：2017-05-26

Applicant: Nuctech Company Limited

Inventor： Lan Zhang ,  Yingshuai Du ,  Bo Li ,  Zonggui Wu ,  Jun Li ,  Xuepeng Cao ,  Haifan Hu ,  Jianping Gu ,  Guangming Xu ,  Bicheng Liu

IPC: G01T1/24 ,  H01L31/119 ,  H01L31/0296 ,  H01L31/02 ,  H05K1/11 ,  H05K1/02 ,  H05K1/18

CPC classification number: G01T1/24 ,  G01T1/241 ,  H01L31/02005 ,  H01L31/0224 ,  H01L31/02966 ,  H01L31/115 ,  H01L31/119 ,  H05K1/0233 ,  H05K1/028 ,  H05K1/115 ,  H05K1/181 ,  H05K2201/10151 ,  H05K2201/10287 ,  H05K2201/10522

Abstract: The present disclosure provides a semiconductor detector. The semiconductor detector comprises: a detector crystal including a crystal body, an anode and a cathode; a field enhance electrode for applying a voltage to the detector crystal; an insulating material disposed between the field enhanced electrode and a surface of the detector crystal. The semiconductor detector further comprises a field enhanced electrode circuit board having a bottom connection layer in contact with the surface of the detector crystal and a top layer opposite to the bottom connection layer, wherein the top layer is connected to a high voltage input terminal of the semiconductor detector, and an insulating material is provided between the bottom connection layer and the detector surface of the detector crystal.