公开(公告)号：US10670743B2

公开(公告)日：2020-06-02

申请号：US15606394

申请日：2017-05-26

Applicant: NUCTECH COMPANY LIMITED

Inventor： Lan Zhang ,  Yingshuai Du ,  Bo Li ,  Zonggui Wu ,  Jun Li ,  Xuepeng Cao ,  Haifan Hu ,  Jianping Gu ,  Guangming Xu ,  Bicheng Liu

IPC: G01T1/24 ,  H04N5/378 ,  H04N5/369 ,  G01T1/29 ,  H01L31/0296 ,  H01L31/08 ,  H01L31/18

Abstract: A semiconductor detector and a packaging method thereof. The semiconductor detector includes: a cathode circuit board including a read out chip, a high voltage side top layer of the cathode circuit board, a bottom connection layer of the cathode circuit board and a dielectric filled between the high voltage side top layer and the bottom connection layer, wherein the high voltage side top layer is connected to the bottom connection layer through a via hole; and a detector crystal including a crystal body, an anode and a cathode, the anode is connected to the read out chip of the cathode circuit board, the high voltage side top layer is connected to an input terminal of the semiconductor detector and the bottom connection layer directly contacts the cathode of the detector crystal to connect the cathode to the cathode circuit board.

公开(公告)号：US10388818B2

公开(公告)日：2019-08-20

申请号：US15625473

申请日：2017-06-16

Applicant: NUCTECH COMPANY LIMITED

Inventor： Lan Zhang ,  Yingshuai Du ,  Bo Li ,  Zonggui Wu ,  Jun Li ,  Xuepeng Cao ,  Haifan Hu ,  Jianping Gu ,  Guangming Xu ,  Bicheng Liu

IPC: H01L31/118 ,  G01T1/24 ,  G01T1/02 ,  H01L27/144 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032

Abstract: There is provided a semiconductor detector. According to an embodiment, the semiconductor detector may include a semiconductor detection material including a first side and a second side opposite to each other. One of the first side and the second side is a ray incident side that receives incident rays. The detector may further include a plurality of pixel cathodes disposed on the first side and a plurality of pixel anodes disposed on the second side. The pixel anodes and the pixel cathodes correspond to each other one by one. The detector may further include a barrier electrode disposed on a periphery of respective one of the pixel cathodes or pixel anodes on the ray incident side. According to the embodiment of the present disclosure, it is possible to effectively suppress charge sharing between the pixels and thus to improve an imaging resolution of the detector.

公开(公告)号：US09766354B2

公开(公告)日：2017-09-19

申请号：US14152332

申请日：2014-01-10

Applicant: NUCTECH COMPANY LIMITED ,  TSINGHUA UNIVERSITY

Inventor： Yuanjing Li ,  Lan Zhang ,  Yulan Li ,  Yinong Liu ,  Jianqiang Fu ,  Hao Jiang ,  Zhi Deng ,  Tao Xue ,  Wei Zhang ,  Jun Li

IPC: G01T3/08 ,  G01T1/36 ,  G01T1/24

CPC classification number: G01T1/366 ,  G01T1/241 ,  G01T3/08

Abstract: The invention provides a semiconductor detector, and the semiconductor detector comprises a semiconductor crystal, a cathode, an anode and at least one ladder electrode; the semiconductor crystal comprises a top surface, a bottom surface and at least one side; the cathode, the anode and the ladder electrode are conductive thin films deposited on a surface of the semiconductor crystal; the cathode is disposed on the bottom surface of the semiconductor crystal, the anode is disposed on the top surface of the semiconductor crystal, the ladder electrode is disposed on the at least one side of the semiconductor crystal; and the ladder electrode comprises a plurality of sub-electrodes. As compared to the prior art, the semiconductor detector can improve the energy resolution.

公开(公告)号：US11189741B2

公开(公告)日：2021-11-30

申请号：US16343983

申请日：2017-09-12

Applicant: NUCTECH COMPANY LIMITED

Inventor： Lan Zhang ,  Haifan Hu ,  Xuepeng Cao ,  Jun Li

IPC: H01L31/0352 ,  H01L27/146 ,  H01L31/02 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0224

Abstract: According to an embodiment, a method of fabricating a photodiode device may include: growing an epitaxial layer on a first surface of a substrate, wherein the epitaxial layer is first type lightly doped; forming, in the substrate, a first type heavily doped region in contact with the first type lightly doped epitaxial layer; thinning the substrate from a second surface of the substrate opposite to the first surface to expose the first type heavily doped region; patterning the first type heavily doped region from the second surface side of the substrate to form a trench therein, that penetrates through the first type heavily doped region and extends into the epitaxial layer, to serve as a first electrode region of the photodiode device; and forming a second type heavily doped region at bottom of the trench, to serve as a second electrode region of the photodiode device.

公开(公告)号：US11011656B2

公开(公告)日：2021-05-18

申请号：US16467623

申请日：2017-08-08

Applicant: NUCTECH COMPANY LIMITED

Inventor： Lan Zhang ,  Haifan Hu ,  Xuepeng Cao ,  Jun Li

IPC: H01L31/0352 ,  H01L27/146 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/103

Abstract: A photodiode device and a photodiode detector are provided. According to an embodiment, the photodiode device may include a first type lightly doped semiconductor base including a first surface and a second surfaces opposite to each other, a first electrode region being first type heavily doped and disposed on the first surface of the semiconductor base, a second electrode region being second type heavily doped and disposed on the second surface of the semiconductor base, wherein the first surface is a light incident surface.

公开(公告)号：US10101473B2

公开(公告)日：2018-10-16

申请号：US15606071

申请日：2017-05-26

Applicant: Nuctech Company Limited

Inventor： Lan Zhang ,  Yingshuai Du ,  Bo Li ,  Zonggui Wu ,  Jun Li ,  Xuepeng Cao ,  Haifan Hu ,  Jianping Gu ,  Guangming Xu ,  Bicheng Liu

IPC: G01T1/24 ,  H01L31/02 ,  H05K1/18 ,  H05K1/02 ,  H05K1/11 ,  H01L31/119 ,  H01L31/0296

Abstract: The present disclosure provides a semiconductor detector. The semiconductor detector comprises: a detector crystal including a crystal body, an anode and a cathode; a field enhance electrode for applying a voltage to the detector crystal; an insulating material disposed between the field enhanced electrode and a surface of the detector crystal. The semiconductor detector further comprises a field enhanced electrode circuit board having a bottom connection layer in contact with the surface of the detector crystal and a top layer opposite to the bottom connection layer, wherein the top layer is connected to a high voltage input terminal of the semiconductor detector, and an insulating material is provided between the bottom connection layer and the detector surface of the detector crystal.

公开(公告)号：US09287433B2

公开(公告)日：2016-03-15

申请号：US14164702

申请日：2014-01-27

Applicant: Tsinghua University ,  Nuctech Company Limited

Inventor： Lan Zhang ,  Yulan Li ,  Yuanjing Li ,  Yinong Liu ,  Jianqiang Fu ,  Hao Jiang ,  Wei Zhang ,  Yanqing Liu ,  Jun Li

IPC: H01L31/115 ,  G01T1/24

CPC classification number: H01L31/115 ,  G01T1/241

Abstract: A radiation detector is provided. The radiation detection comprises a semiconductor crystal for detecting radiation. The semiconductor crystal comprises a top surface, a bottom surface, and at least one side surface. At least one anode is arranged on at least one of the top surface, the bottom surface, and the at least one side surface. At least one cathode is arranged on at least another one of the top surface, the bottom surface, and the at least one side surface. The at least one anode each has a stripe shape, the at least one cathode each has a planar or curved shape, and the at least one cathode and the at least one anode extend in parallel with respect to each other to a length substantially equal to that of the anode. Such an electrode structure can improve energy resolution and detection efficiency of the radiation detector effectively.