Polycrystalline diamond carbide composites

    公开(公告)号:GB2362655B

    公开(公告)日:2004-09-15

    申请号:GB0105725

    申请日:2001-03-08

    Abstract: Polycrystalline diamond (PCD) carbide composites of this invention have a microstructure comprising a plurality of granules formed from PCD, polycrystalline cubic boron nitride, or mixture thereof, that are distributed within a substantially continuous second matrix region that substantially surrounds the granules and that is formed from a cermet material. In an example embodiment, the granules are polycrystalline diamond and the cermet material is cemented tungsten carbide. PCD carbide composites of this invention display improved properties of fracture toughness and chipping resistance, without substantially compromising wear resistance, when compared to conventional pure PCD materials.

    High pressure press container
    13.
    发明专利

    公开(公告)号:GB2496047A

    公开(公告)日:2013-05-01

    申请号:GB201219156

    申请日:2012-10-25

    Abstract: A container assembly 130 for a high pressure press having a central pressure cell 114 comprising: a container 132; and a gasket 134 meeting the container at an interface, the container and the gasket being dimensioned to locate the interface within the central pressure cell. The container may comprise a recess at the interface, wherein a portion of the gasket extends into the interface. The container may be a cube with a cut away edge, with the interface being defined by the cut away edge. The gasket may fit entirely within the volume previous occupied by said edge. When the gasket occupies this volume 134A, a second portion of the gasket 134B may extend away from the cube beyond this volume, for receipt between facing anvils 112 of the high pressure press. A high pressure press for use with the container, and a method of use for the container are also disclosed.

    14.
    发明专利
    未知

    公开(公告)号:DE60301807T2

    公开(公告)日:2006-06-29

    申请号:DE60301807

    申请日:2003-02-26

    Abstract: An ultra-hard semiconductive polycrystalline diamond (PCD) material formed with semiconductive diamond particles doped with Li, Be or Al and/or insulative diamond particles having semiconductive surfaces, tools incorporating the same, and methods for forming the same, are provided. The ultra-hard PCD material may be formed using a layer of insulative diamond grit feedstock that includes additives therein, then sintering to convert a plurality of the diamond crystals to include a semiconductive surface. In another embodiment, the ultra-hard PCD material is formed by sintering semiconductive diamond grit feedstock consisting of diamond crystals doped with Li, Al or Be. The ultra-hard semiconductive PCD cutting layer exhibits increased cuttability, especially in EDM and EDG cutting operations.

    POLYCRYSTALLINE DIAMOND WITH IMPROVED ABRASION RESISTANCE

    公开(公告)号:CA2451825A1

    公开(公告)日:2004-07-21

    申请号:CA2451825

    申请日:2003-12-02

    Abstract: A cutting element and bit incorporating the cutting element is provided, as well as a method for forming the same. The cutting element includes an ultra hard material layer including chromium and carbon and exhibiting increased abrasion resistance without sacrificing toughness. The method for manufacturing the cutting element includes providing a layer of ultra hard material particles and chromium carbide over the substrate, and then sintering to form the cutting element.

    SEMICONDUCTIVE POLYCRYSTALLINE DIAMOND

    公开(公告)号:CA2419709A1

    公开(公告)日:2003-08-26

    申请号:CA2419709

    申请日:2003-02-25

    Abstract: An ultra-hard semiconductive polycrystalline diamond (PCD) material formed with semiconductive diamond particles doped with Li, Be or Al and/or insulative diamond particles having semiconductive surfaces, tools incorporating the same, and methods for forming the same, are provided. The ultra-hard PCD material may be forme d using a layer of insulative diamond grit feedstock that includes additives therein , then sintering to convert a plurality of the diamond crystals to include a semiconductive surface. In another embodiment, the ultra-hard PCD material is formed by sintering semiconductive diamond grit feedstock consisting of diamond crystals doped with Li, Al or B e. The ultra-hard semiconductive PCD cutting layer exhibits increased cuttability, especially in EDM and EDG cutting operations.

    Ultra hard material cutter with shaped cutting surface

    公开(公告)号:GB2369841A

    公开(公告)日:2002-06-12

    申请号:GB0127857

    申请日:2001-11-21

    Abstract: A cylindrical cutting element comprises a substrate 2 provided with a face of ultra hard material 4 at one end. At the interface 3 between the substrate and the ultra hard material is a first concave depression 34 which extends radially outwards from near the centre of the element to the outer edge. A second depression 12, formed on the surface 5 of the ultra hard material 4, also extends radially from near the centre and may be aligned over the first depression 34. The first and second depressions may increase in width and depth as they extend radially outwards. Further depressions may be formed on the interface and the exposed surface of the ultra hard material. In addition, smaller, secondary depressions (38, figures 5 and 6) may be made around the first and second depressions 34 and 12. Transition layers (42, figure 7) may be placed between the substrate and the ultra hard material, having properties intermediate the two, and a circumferential groove (68, figure 9) may be formed in the outer surface of the substrate 2 and filled with additional ultra hard material.

Patent Agency Ranking