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    2.
    发明专利
    未知

    公开(公告)号：DE60301807D1

    公开(公告)日：2006-02-23

    申请号：DE60301807

    申请日：2003-02-26

    Applicant: SMITH INTERNATIONAL

    Inventor： MIDDLEMISS STEWART

    IPC: B23B51/00 ,  B22F3/10 ,  B22F7/06 ,  B23B27/14 ,  B23B27/20 ,  B23P15/28 ,  C04B35/52 ,  C04B41/50 ,  C04B41/85 ,  C23C24/08 ,  C23C30/00

    Abstract: An ultra-hard semiconductive polycrystalline diamond (PCD) material formed with semiconductive diamond particles doped with Li, Be or Al and/or insulative diamond particles having semiconductive surfaces, tools incorporating the same, and methods for forming the same, are provided. The ultra-hard PCD material may be formed using a layer of insulative diamond grit feedstock that includes additives therein, then sintering to convert a plurality of the diamond crystals to include a semiconductive surface. In another embodiment, the ultra-hard PCD material is formed by sintering semiconductive diamond grit feedstock consisting of diamond crystals doped with Li, Al or Be. The ultra-hard semiconductive PCD cutting layer exhibits increased cuttability, especially in EDM and EDG cutting operations.

    Gauge trimmers
    6.
    发明专利
    Gauge trimmers 未知

    公开(公告)号：GB2380211A

    公开(公告)日：2003-04-02

    申请号：GB0202726

    申请日：2002-02-06

    Applicant: SMITH INTERNATIONAL

    Inventor： EYRE RONALD K ,  MIDDLEMISS STEWART ,  BELNAP LYNN L

    IPC: E21B10/56 ,  E21B10/567 ,  E21B10/573

    Abstract: A gauge trimmer has a body 20 of tungsten carbide and an ultra hard material layer 24. The body has a flat surface 28 that runs into an ultra hard material flat surface 30. These surfaces are at an angle to the axis of the body. A further flat surface 38 is formed on the ultra hard material and is at an angle to the axis of the body, the angle being larger than the first angle. The top surface of the body is shaped adjacent the flat surfaces so that there is a greater depth of the ultra hard material adjacent the flat surfaces. Several ways of shaping the top of the body to give the required greater depth are described.

    SEMICONDUCTIVE POLYCRYSTALLINE DIAMOND
    7.
    发明专利
    SEMICONDUCTIVE POLYCRYSTALLINE DIAMOND 未知

    公开(公告)号：CA2419709C

    公开(公告)日：2008-09-23

    申请号：CA2419709

    申请日：2003-02-25

    Applicant: SMITH INTERNATIONAL

    Inventor： MIDDLEMISS STEWART

    IPC: B23B51/00 ,  C30B29/04 ,  B22F3/10 ,  B22F7/06 ,  B23B27/14 ,  B23B27/20 ,  B23P15/28 ,  C04B35/52 ,  C23C24/08 ,  C23C30/00 ,  C30B31/02 ,  E21B10/46

    Abstract: An ultra-hard semiconductive polycrystalline diamond (PCD) material formed with semiconductive diamond particles doped with Li, Be or Al and/or insulative diamond particles having semiconductive surfaces, tools incorporating the same, and methods for forming the same, are provided. The ultra-hard PCD material may be formed using a layer of insulative diamond grit feedstock that includes additives therein, then sintering to convert a plurality of the diamond crystals to include a semiconductive surface. In another embodiment, the ultra-hard PCD material is formed by sintering semiconductive diamond grit feedstock consisting of diamond crystals doped with Li, Al or Be. The ultra-hard semiconductive PCD cutting layer exhibits increased cuttability, especially in EDM and EDG cutting operations.

    POLYCRYSTALLINE DIAMOND CARBIDE COMPOSITES
    9.
    发明专利
    POLYCRYSTALLINE DIAMOND CARBIDE COMPOSITES 未知

    公开(公告)号：CA2340382C

    公开(公告)日：2006-07-18

    申请号：CA2340382

    申请日：2001-03-09

    Applicant: SMITH INTERNATIONAL

    Inventor： WHITE BRIAN A ,  EYRE RONALD K ,  MIDDLEMISS STEWART ,  FANG ZHIGANG ,  GRIFFO ANTHONY

    IPC: B24D3/10 ,  C09K3/14 ,  C22C26/00 ,  E21B10/46 ,  E21B10/52 ,  E21B10/56 ,  E21B10/567

    Abstract: Polycrystalline diamond (PCD) carbide composites of this invention have a microstructure comprising a plurality of granules formed from PCD, polycrystalline cubic boron nitride, or mixture thereof, that are distributed within a substantially continuous second matrix region that substantially surrounds the granules and that is formed from a cermet material. In an example embodiment, the granules are polycrystalline diamond and the cermet material is cemented tungsten carbide. PCD carbide composites of this invention display improved properties of fracture toughness and chipping resistance, without substantially compromising wear resistance, when compared to conventional pure PCD materials.

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