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公开(公告)号：MY125711A
公开(公告)日：2006-08-30
申请号：MYPI9803557
申请日：1998-08-04
Applicant: SONY CORP
Inventor： HIRATA SHOJI , AGA KEIGO
Abstract: A SEMICONDUCTOR LASER DRIVING METHOD, WHICH IS USABLE IN AN OPTICAL DISC APPARATUS, FOR EXAMPLE, MAKES IT POSSIBLE TO USE A SEMICONDUCTOR LASER (1) IN A LOW NOISE CONDITION WHEN THE SEMICONDUCTOR (1) LASER IS RF- MODULATED, BY DRIVING THE SEMICONDUCTOR LASER (1) UNDER A CONDITIONS WHERE THE AVERAGE OPTICAL OUTPUT IS OFFSET FROM PEAKS APPEARING IN A CURVE REPRESENTING THE RELATIVE INTENSITY OF NOISE TO AVERAGE OPTICAL OUTPUT CHARACTERISTICS OF THE SEMICONDUCTOR LASER (1).MORE SPECIFICALLY, RF MODULATING CONDITIONS (FREQUENCY, AMPLITUDE AND WAVEFROM) ARE SELECTED SO THAT THE PEAKS DO NOT ENTER THE RANGE OF P±0.5 MW RELATIVE TO THE PRACTICALLY USED AVERAGE OPTICAL OUTPUT P*, FOR EXAMPLE.(FIGURE 2)
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公开(公告)号：DE3875768D1
公开(公告)日：1992-12-17
申请号：DE3875768
申请日：1988-03-29
Applicant: SONY CORP
Inventor： HIRATA SHOJI
Abstract: A distributed feedback semiconductor laser has a first cladding layer (2), an active layer (3), a guide layer (4) on which a diffraction grating (5) is formed and a second cladding layer (6), the effective thickness of the guide layer (4) in the waveguide direction being made different in one region (21) to change the phase of a light propagating through the waveguide.
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公开(公告)号：CA1298641C
公开(公告)日：1992-04-07
申请号：CA564366
申请日：1988-04-18
Applicant: SONY CORP
Inventor： HIRATA SHOJI
Abstract: A semiconductor laser device including a first semiconductor layer having a strip waveguide structure to obtain optical confinement and a second semiconductor layer having a ridge waveguide structure for defining an electrical current passage region. The strip waveguide structure has a first width, and projects on the first semiconductor layer, extending over the central area of the layer in a longitudinal direction. The ridge waveguide structure projects on the second semiconductor layer and extends in the longitudinal direction with a second width which corresponds to the strip structure. The strip waveguide structure cooperates with the ridge waveguide structure to produce a difference between the refractive index of a center region which extends in the longitudinal direction of the second semiconductor and that of a neighboring region due to the difference in thicknesses between the two, so that the center region serves as an optical waveguide.
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公开(公告)号：GB2185353A
公开(公告)日：1987-07-15
申请号：GB8700702
申请日：1987-01-13
Applicant: SONY CORP
Inventor： HIRATA SHOJI
Abstract: A method of manufacturing a distributed feedback type semiconductor laser comprises a first cladding layer, an active layer disposed on the first cladding layer, a guiding layer disposed on the active layer and a second cladding layer disposed on the guiding layer respectively, in which a grating is disposed on the guiding layer, wherein the method comprises, a step of forming a predetermined material layer on the guiding layer, a step of selectively etching the material layer and the guiding layer until the guiding layer is at least partially exposed thereby forming undulation substantially in a trigonal waveform to the surface of the material layer and the guiding layer, and a step of forming the second cladding layer so as to cover the unevenness. A distributed feedback type semiconductor laser having a grating with an intense coupling the light can be manufactured easily and at a good reproducibility.
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公开(公告)号：FR2591818A1
公开(公告)日：1987-06-19
申请号：FR8617746
申请日：1986-12-18
Applicant: SONY CORP
Inventor： HIRATA SHOJI
Abstract: A distributed feedback semiconductor laser is provided with an optical waveguide having first and second straight-bar portions and a bending portion. The pitch of the grating in the case of light passing through the bending portion is a little longer than that in the case of light passing through the first and second straight-bar portion in order to shift the phase of the light transmitted along the optical waveguide by lambda /4 where lambda is the oscillation wavelength, thereby generating single longitudinal mode laser light.
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Patent Agency Ranking
公开(公告)号：DE602005026494D1
公开(公告)日：2011-04-07
申请号：DE602005026494
申请日：2005-12-20
Applicant: SONY CORP
Inventor： HIRATA SHOJI
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公开(公告)号：NL1007561C2
公开(公告)日：1998-09-15
申请号：NL1007561
申请日：1997-11-17
Applicant: SONY CORP
Inventor： HIRATA SHOJI
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公开(公告)号：NL1007561A1
公开(公告)日：1998-05-20
申请号：NL1007561
申请日：1997-11-17
Applicant: SONY CORP
Inventor： HIRATA SHOJI
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公开(公告)号：CA1303195C
公开(公告)日：1992-06-09
申请号：CA562757
申请日：1988-03-29
Applicant: SONY CORP
Inventor： HIRATA SHOJI
Abstract: A distributed feedback semiconductor laser has a first cladding layer, an active layer, a guide layer on which a diffraction grating is formed and a second cladding layer, the effective thickness of the guide layer in the waveguide direction being made different in one region to change the phase of a light propagating through the waveguide.
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公开(公告)号：GB2185353B
公开(公告)日：1989-01-05
申请号：GB8700702
申请日：1987-01-13
Applicant: SONY CORP
Inventor： HIRATA SHOJI
Abstract: A method of manufacturing a distributed feedback type semiconductor laser comprises a first cladding layer, an active layer disposed on the first cladding layer, a guiding layer disposed on the active layer and a second cladding layer disposed on the guiding layer respectively, in which a grating is disposed on the guiding layer, wherein the method comprises, a step of forming a predetermined material layer on the guiding layer, a step of selectively etching the material layer and the guiding layer until the guiding layer is at least partially exposed thereby forming undulation substantially in a trigonal waveform to the surface of the material layer and the guiding layer, and a step of forming the second cladding layer so as to cover the unevenness. A distributed feedback type semiconductor laser having a grating with an intense coupling the light can be manufactured easily and at a good reproducibility.
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