公开(公告)号：MY127511A

公开(公告)日：2006-12-29

申请号：MYPI0405137

申请日：1998-08-04

Applicant: SONY CORP

Inventor： HIRATA SHOJI ,  AGA KEIGO

IPC: H01S3/00 ,  G11B7/125 ,  H01S5/00 ,  H01S5/06 ,  H01S5/062 ,  H04B10/07 ,  H04B10/2507

Abstract: A SEMICONDUCTOR LASER DRIVING METHOD, WHICH IS USABLE IN AN OPTICAL DISC APPARATUS, FOR EXAMPLE, MAKES IT POSSIBLE TO USE A SEMICONDUCTOR LASER (1) IN A LOW NOISE CONDITION WHEN THE SEMICONDUCTOR LASER (1) IS RF-MODULATED, BY DRIVING THE SEMICONDUCTOR LASER (1) UNDER A CONDITIONS WHERE THE AVERAGE OPTICAL OUTPUT IS OFFSET FROM PEAKS APPEARING IN A CURVE REPRESENTING THE RELATIVE INTENSITY OF NOISE TO AVERAGE OPTICAL OUTPUT CHARACTERISTICS OF THE SEMICONDUCTOR LASER (1). MORE SPECIFICALLY, RF MODULATING CONDITIONS (FREQUENCY, AMPLITUDE AND WAVEFORM) ARE SELECTED SO THAT THE PEAKS DO ENTER THE RANGE OF P*±O.5 MW RELATIVE TO THE PRACTICALLY USED AVERAGE OPTICAL OUTPUT, FOR EXAMPLE. (FIGURES 2 AND 5)

公开(公告)号：DE3875768T2

公开(公告)日：1993-05-27

申请号：DE3875768

申请日：1988-03-29

Applicant: SONY CORP

Inventor： HIRATA SHOJI

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/12 ,  H01S5/223 ,  H01S3/06 ,  H01S3/19

Abstract: A distributed feedback semiconductor laser has a first cladding layer (2), an active layer (3), a guide layer (4) on which a diffraction grating (5) is formed and a second cladding layer (6), the effective thickness of the guide layer (4) in the waveguide direction being made different in one region (21) to change the phase of a light propagating through the waveguide.

公开(公告)号：DE3700909A1

公开(公告)日：1987-07-16

申请号：DE3700909

申请日：1987-01-14

Applicant: SONY CORP

Inventor： HIRATA SHOJI

IPC: H01S5/00 ,  H01S5/12 ,  H01S3/05

Abstract: A method of manufacturing a distributed feedback type semiconductor laser comprises a first cladding layer, an active layer disposed on the first cladding layer, a guiding layer disposed on the active layer and a second cladding layer disposed on the guiding layer respectively, in which a grating is disposed on the guiding layer, wherein the method comprises, a step of forming a predetermined material layer on the guiding layer, a step of selectively etching the material layer and the guiding layer until the guiding layer is at least partially exposed thereby forming undulation substantially in a trigonal waveform to the surface of the material layer and the guiding layer, and a step of forming the second cladding layer so as to cover the unevenness. A distributed feedback type semiconductor laser having a grating with an intense coupling the light can be manufactured easily and at a good reproducibility.

公开(公告)号：DE3643361A1

公开(公告)日：1987-06-19

申请号：DE3643361

申请日：1986-12-18

Applicant: SONY CORP

Inventor： HIRATA SHOJI

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/12 ,  H01S5/40 ,  H01S3/19 ,  H01S3/098

Abstract: A distributed feedback semiconductor laser is provided with an optical waveguide having first and second straight-bar portions and a bending portion. The pitch of the grating in the case of light passing through the bending portion is a little longer than that in the case of light passing through the first and second straight-bar portion in order to shift the phase of the light transmitted along the optical waveguide by lambda /4 where lambda is the oscillation wavelength, thereby generating single longitudinal mode laser light.

公开(公告)号：DE3774797D1

公开(公告)日：1992-01-09

申请号：DE3774797

申请日：1987-07-13

Applicant: SONY CORP

Inventor： HIRATA SHOJI ,  HONDA KAZUO

IPC: H01S5/00 ,  H01S5/12 ,  H01S3/06 ,  H01L33/00

Abstract: A distributed-feedback type semiconductor laser device (17) having an active layer (3) arranged between a pair of cladding layers (2, 6) is provided with a stripe-shaped distributed-feedback mechanism (5), for example, having the configuration of a diffraction grating (5), and dummy regions (16) of the same configuration as the distributed-feedback 6 mechanism (5) arranged at opposite sides thereof and spaced from the distributed-feedback mechanism by relatively narrow plane regions (11).

公开(公告)号：CA1285057C

公开(公告)日：1991-06-18

申请号：CA527196

申请日：1987-01-13

Applicant: SONY CORP

Inventor： HIRATA SHOJI

IPC: H01S5/00 ,  H01S5/12 ,  H01S3/05 ,  H01S3/098 ,  H01S3/19

Abstract: A method of manufacturing a distributed feedback type semiconductor laser comprises a first cladding layer, an active layer disposed on the first cladding layer, a guiding layer disposed on the active layer and a second cladding layer disposed on the guiding layer respectively, in which a grating is disposed on the guiding layer, wherein the method comprises, a step of forming a predetermined material layer on the guiding layer, a step of selectively etching the material layer and the guiding layer until the guiding layer is at least partially exposed thereby forming undulation substantially in a trigonal waveform to the surface of the material layer and the guiding layer, and a step of forming the second cladding layer so as to cover the unevenness. A distributed feedback type semiconductor laser having a grating with an intense coupling the light can be manufactured easily and at a good reproducibility.

公开(公告)号：GB2185149B

公开(公告)日：1989-10-18

申请号：GB8630146

申请日：1986-12-17

Applicant: SONY CORP

Inventor： HIRATA SHOJI

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/12 ,  H01S5/40

Abstract: A distributed feedback semiconductor laser is provided with an optical waveguide having first and second straight-bar portions and a bending portion. The pitch of the grating in the case of light passing through the bending portion is a little longer than that in the case of light passing through the first and second straight-bar portion in order to shift the phase of the light transmitted along the optical waveguide by lambda /4 where lambda is the oscillation wavelength, thereby generating single longitudinal mode laser light.

公开(公告)号：DE102009017739A1

公开(公告)日：2009-10-22

申请号：DE102009017739

申请日：2009-04-16

Applicant: SONY CORP

Inventor： HIRATA SHOJI

IPC: H01S3/23 ,  H01S3/10 ,  H01S3/101

公开(公告)号：DE3643361C2

公开(公告)日：1996-02-29

申请号：DE3643361

申请日：1986-12-18

Applicant: SONY CORP

Inventor： HIRATA SHOJI

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/12 ,  H01S5/40 ,  H01S3/19 ,  H01S3/098

Abstract: A distributed feedback semiconductor laser is provided with an optical waveguide having first and second straight-bar portions and a bending portion. The pitch of the grating in the case of light passing through the bending portion is a little longer than that in the case of light passing through the first and second straight-bar portion in order to shift the phase of the light transmitted along the optical waveguide by lambda /4 where lambda is the oscillation wavelength, thereby generating single longitudinal mode laser light.

公开(公告)号：GB2185149A

公开(公告)日：1987-07-08

申请号：GB8630146

申请日：1986-12-17

Applicant: SONY CORP

Inventor： HIRATA SHOJI

IPC: H01S5/00 ,  H01S5/10 ,  H01S5/12 ,  H01S5/40 ,  H01S3/19

Abstract: A distributed feedback semiconductor laser is provided with an optical waveguide having first and second straight-bar portions and a bending portion. The pitch of the grating in the case of light passing through the bending portion is a little longer than that in the case of light passing through the first and second straight-bar portion in order to shift the phase of the light transmitted along the optical waveguide by lambda /4 where lambda is the oscillation wavelength, thereby generating single longitudinal mode laser light.