SOLID-STATE IMAGE PICKUP DEVICE
    14.
    发明专利

    公开(公告)号:JPS62221147A

    公开(公告)日:1987-09-29

    申请号:JP6509886

    申请日:1986-03-24

    Applicant: SONY CORP

    Abstract: PURPOSE:To obtain a high quality sensed image effectively avoiding incidence of light into an unnecessary region without reducing sensitivity and the generation of smearing by coating a light intercepting layer on the side of the step of a transparent material layer formed on the periphery of a light receiving region. CONSTITUTION:A forward electrode 9 formed, e.g., on the extended end of a transfer electrode 10 and an insulation layer 8a has a step 15 on part of the periphery of the surface of a light receiving region 11 and on the side of the step 15, a light intercepting layer 14 of an Al evaporated film is formed simultaneously with the formation of, e.g., a light intercepting object 13 of the Al evaporated film. The light intercepting object 13 and the light intercepting layer 14 can be formed with the same material Al layer by evaporating Al on all the surface including the side of the above-mentioned step 15 on, e.g., a substrate 1 which has the forward electrode 9, etc., and by making a receiving light widow 14a by photo-etching. An insulation layer made of such as SiO2 is coated on the forward electrode 9.

    SOLID-STATE IMAGE PICKUP DEVICE
    16.
    发明专利

    公开(公告)号:JPS63158981A

    公开(公告)日:1988-07-01

    申请号:JP30747486

    申请日:1986-12-23

    Applicant: SONY CORP

    Abstract: PURPOSE:To control an exposure time, to eliminate a need for a mechanical shutter device, and to lighten and miniaturize a video camera by exhausting signal charges accumulated in a signal charge accumulation area to a conductive type semiconductor substrate. CONSTITUTION:A prescribed voltage VH is supplied to the conductive type semiconductor substrate 1, and the signal charges accumulated in the signal charge accumulation area 3 are exhausted to the substrate 1. By supplying the substrate 1 with a pulse signal P1 having the prescribed voltage VH at an arbitrarily point of time during a frame period or a field period, the signal charges accumulated during the time from a time when signal charges were read out the last time to the point of time when the pulse signal P1 is supplied are exhausted to the substrate 1, thereafter, signal charges accumulated until the following time of the reading are read out. As a result, by varying the time of supplying the pulse signal P1 to the substrate 1, the exposure time can be varied, and thus a desired exposure time can be obtained.

    SOLID-STATE IMAGING DEVICE
    17.
    发明专利

    公开(公告)号:JPS6314467A

    公开(公告)日:1988-01-21

    申请号:JP15759586

    申请日:1986-07-04

    Applicant: SONY CORP

    Abstract: PURPOSE:To improve the transfer efficiency at the last stage of a vertical transfer register even if the vertical transfer register is minimized by forming the width of the last channel where the vertical transfer register is connected to a horizontal transfer register wider. CONSTITUTION:A plurality of photo detectors 1 arranged in horizontal and vertical directions, a plurality of vertical transfer registers 2 extended in the vertical direction and a horizontal transfer register 3 connected to the end of each vertical transfer register 2 are provided, and the last channel width W2 of the vertical transfer register 2 connected to the horizontal transfer register 3 is formed wider than the previous channel width W1. This avoids the proximity effect of photolithography at the time of channel formation especially in the case of a narrow width vertical transfer register and prevents the reduction of the channel width. Accordingly, the deterioration of the last transfer can be prevented even if the width of the vertical transfer register is made narrower. The fringing electric field at the time of transfer can also be made greater and the efficiency of transfer can be improved since the length of the last transfer electrode can be made shorter.

    CHARGE TRANSFER DEVICE
    18.
    发明专利

    公开(公告)号:JPS62291967A

    公开(公告)日:1987-12-18

    申请号:JP13488186

    申请日:1986-06-12

    Applicant: SONY CORP

    Abstract: PURPOSE:To lower the power supply voltage for saving power consumption while preventing any external noise, etc., by a method wherein an output gate outputting as charge from a transfer region to a potential conversion region is supplied with a potential of around ground level. CONSTITUTION:The charge transferred in a transfer region 3 by two phase clocks phi1, phi2 is transferred to a potential conversion region is formed of a floating diffusion region 2, a precharge drain regions 5, etc., through the intermediary of an output region 1 wherein as potential at around ground level. is not connected to an outer terminal of terminal part 3a in a region 3 but fed to a gate electrode 11 to accumulate and output the charge. Thus, the current flowing into the region 2 is not affected by any fluctuation in potential or external noise at all. Furthermore, the potential in potential conversion region can be lowered within the range not to feed any negative power supply corresponding to the output gate region 1 so that power supply voltage may be lowered to save power consumption at the cost of no dynamic range.

    SOLID-STATE IMAGE PICKUP DEVICE
    19.
    发明专利

    公开(公告)号:JPS62219565A

    公开(公告)日:1987-09-26

    申请号:JP6178586

    申请日:1986-03-19

    Applicant: SONY CORP

    Abstract: PURPOSE:To uniformize the amount of electric charge stored by various charge storing regions, by connecting first and second channel stopping regions at their required sections by means of resistance regions having a required resistance. CONSTITUTION:A second channel stopping region 21B is provided so as to be connected from the ends of a first channel stopping region 21A and to surround the region 21A. This second channel stopping region 21B includes a channel stopping region LCS having a low concentration of impurity and a channel stopping region HCS having a higher concentration of impurity than that of the region LCS. An aluminium wiring 41 is adhered on and along the region HCS as indicated by the broken line so that the wiring 41 is contacted with the region HCS at a plurality of sites 42 as indicated by the marks (x). Thus, these contact sites provide terminals to which the wiring 41 gives a ground potential or a predetermined potential.

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