公开(公告)号：JP2002176053A

公开(公告)日：2002-06-21

申请号：JP2000370161

申请日：2000-12-05

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA ,  SAITO MASAKI

IPC: C01B21/068 ,  C23C16/34 ,  H01L21/31 ,  H01L21/318 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To manufacture a semiconductor device which comprises a nitride film and is high in any of an integration degree, a reliability and a performance, at low cost. SOLUTION: In a semiconductor device, a nitride film is formed of first and second materials not containing hydrogen. Therefore, a even though the nitride film is formed, the hydrogen is not diffused in a base body. As the activated first material is transferred on the base body by a diffusion or the pressure difference, the kinetic energy of the first material transferred on the base body is low and damage to the base body is little. Moreover, as the second neutral material is also transferred on the base body, the charge-up of the base body is little.

公开(公告)号：JPH1167749A

公开(公告)日：1999-03-09

申请号：JP22827697

申请日：1997-08-25

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA

IPC: H01L21/31 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To make it possible to form a silicon oxide film having excellent characteristics in high throughput by drying a silicon layer under the state, wherein the substrate having the silicon layer is contained in a holding metal fitting, and forming the silicon oxide film on the surface of the silicon layer under the state, wherein the substrate is contained in the holding metal fitting. SOLUTION: A drying/film-forming device 1 is constituted of a drying chamber 10, an oxide-film forming chamber 14 and a conveying path 18. A substrate 30 having a silicon layer is dried under the state the substrate 30 is contained in a substrate holding metal fitting 20. In the oxide-film forming chamber 14, a silicon oxide film is formed on the surface of the silicon layer under the state wherein the substrate 30 having the silicon layer is contained in the substrate holding metal fitting 20. The drying chamber 10 and the oxide-film forming chamber are connected by the conveying path 18. Since the drying process and the oxide-film forming process are performed under the state wherein the substrates having the silicon layers are contained in the same substrate holding metal fittings, the time required for the drying process and the oxide- film forming process can be shortened, and the high throughput can be obtained.

公开(公告)号：JPH10284482A

公开(公告)日：1998-10-23

申请号：JP8680797

申请日：1997-04-04

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA

IPC: H01L21/316

Abstract: PROBLEM TO BE SOLVED: To prevent the contamination, etc., formed before a silicon oxide film is formed from being taken into the silicon oxide film by selectively forming a silicon layer on a substrate area which is not covered with an insulating film and forming the silicon oxide film on the surface of the silicon layer without exposing the silicon layer to the air. SOLUTION: A silicon semiconductor substrate 30 is carried in a single wafer processing CVD device and a silicon layer 32 is selectively formed on a substrate area which is not covered with an insulating film 31 (element isolation region). Then a silicon oxide film 33 is formed on the surface of the silicon layer 32 by an oxidation method using a wet gas by maintaining the temperature in a treatment chamber at about 400 deg.C. After the atmospheric temperature in the treatment chamber reaches about 800 deg.C, the silicon oxide film 33 is further formed by the oxidation method using the wet gas while the atmospheric in the treatment chamber is the maintained at the same temperature. Upon completing the formation of the silicon oxide film 33, the atmosphere in the treatment chamber is changed to an inert gas atmosphere and the substrate 30 is carried out of the chamber.

公开(公告)号：JPH08288410A

公开(公告)日：1996-11-01

申请号：JP9087095

申请日：1995-04-17

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA ,  YOSHIKOSHI SHUNICHI

IPC: H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

Abstract: PURPOSE: To prevent degradation in reliability of a gate insulating layer by allowing electrons to flow from the gate electrode of polycrystalline silicon to the silicon semiconductor substrate of semiconductor non-volatile memory. CONSTITUTION: A semiconductor non-volatile memory device contains a gate area wherein a second gate electrode 20 is formed on a gate insulating film 13 with a first gate electrode 17 and an intermediate insulating layer 18 in-between. At least the first gate electrode is composed of a single crystal semiconductor layer.

公开(公告)号：JPH07335876A

公开(公告)日：1995-12-22

申请号：JP12844194

申请日：1994-06-10

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA

IPC: H01L29/78 ,  H01L21/316 ,  H01L21/318

Abstract: PURPOSE:To make electron mobility adequate, and obtain a gate insulating film of initial dielectric strength, by performing a first heat treatment in an atmosphere of reactive gas containing nitrogen and oxygen after an oxide film is formed on a substrate, and performing a second heat treatment in reactive gas containing oxygen wherein the composition ratio of reactive nitrogen is lower than or equal to a specified value. CONSTITUTION:An element isolation film 2 is formed on the surface of a silicon substrate 1 by using a LOCOS method. A gate insulating film 3 as a stable thermal oxidation film is formed on the silicon substrate 1 surface. A first heat treatment is performed in an atmosphere of reactive gas containing nitrogen and oxygen. A second heat treatment is performed in reactive gas wherein the composition ratio of reactive nitrogen is lower than or equal to 10%. A gate electrode 4 is patterned, and an impurity region 5 to serve as a source.drain is formed. An interlayer insulating film 6 is deposited, contact holes 7, 8 are made, an Al film 9 is deposited on the whole surface, and electrodes 10, 11 are formed by patterning. Hence an excellent gate insulating film is obtained.

公开(公告)号：JPH07135208A

公开(公告)日：1995-05-23

申请号：JP28102993

申请日：1993-11-10

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA

IPC: H01L29/78 ,  H01L21/31 ,  H01L21/318

Abstract: PURPOSE:To form an insulating film with which the stress generated by a rapid heat treatment (RTA), conducted after formation of an insulating film on a substrate, can be alleviated. CONSTITUTION:A gate insulating film 3 is formed as an SiON insulating film on an Si substrate 1 by conducting a CVD method in an atmosphere containing Si, O and N. Besides, the compositional ratio of Si, O and N is controlled by the CVD method in such a manner that the gate insulating film 3 has the thermal expansion coefficient almost equal to that of the Si substrate 1. After formation of a film by the CVD method, a heat treatment is conducted in the atmosphere containing O and N, and the H and H2O contained in the gate electrode film 3 are removed. As a result, an RTA is conductd after formation of the gate insulating film 3, no interfacial level is generated, and the deterioration of hot electron resistance can be prevented.

公开(公告)号：JPH0778831A

公开(公告)日：1995-03-20

申请号：JP17975993

申请日：1993-06-25

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA ,  TSUKAMOTO HIRONORI ,  SUZUKI TOSHIHARU

IPC: H01L21/265 ,  H01L21/324

Abstract: PURPOSE:To improve resistance to hot electrons in, e.g. an MOS transistor, and form a shallow junction in a short time process, by heat-treating an object to be heated in the state that stress is not left in the object after heat treatment. CONSTITUTION:This method contains the following; a heating process for increasing the temperature of an object to be heated, a heat treatment process for keeping the object at a constant temperature (Ta), and a cooling process for decreasing the temperature of the object. In the heating process and/or the cooling process, the object is kept for a while at a temperature equal to or approximate to the transition point Tc. In other case, the object is kept in a specified temperature range passing the transition temperature Tc. Further, in another case, the temperature of the object passes the transition point Tc, at a heating speed or a cooling speed wherein the crystal structure of the object in the vicinity of the transition point Tc transfers from a stable state to another phase stable state.

公开(公告)号：JP2005216985A

公开(公告)日：2005-08-11

申请号：JP2004019245

申请日：2004-01-28

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KATAOKA TOYOTAKA

IPC: H01L21/28 ,  H01L21/8238 ,  H01L27/092

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device in which a gate insulating film of fine quality can be formed on both NMOS and PMOS by the same process.
SOLUTION: According to the semiconductor device, the NMOS3 and PMOS5, each of which has a channel layer made of a distorted structure of Si and shows a high migration rate, are formed on the same board 1. The NMOS3 has a first substrate layer 7 which is made of SiGe and is on the board 1, and the first channel layer 9 which is on the substrate layer 7 and is made of the Si containing a tensile distortion. The PMOS5 has a second substrate layer 17 which is made of SiC and is on the board 1, and the second channel layer 19 which is on the substrate layer 17 and is made of the Si containing a compressive distortion.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种半导体器件，其中可以通过相同的工艺在NMOS和PMOS两者上形成具有良好质量的栅极绝缘膜。 解决方案：根据半导体器件，在同一个板1上形成NMOS3和PMOS5，每个NMOS3和PMOS5具有由Si的失真结构构成的沟道层并显示出高的迁移率。NMOS3具有第一 基板层7，由SiGe制成并位于基板1上，第一沟道层9位于基板层7上，由含有拉伸变形的Si构成。 PMOS5具有由SiC制成并位于基板1上的第二基板层17和位于基板层17上并由含有压缩变形的Si构成的第二沟道层19。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2002343961A

公开(公告)日：2002-11-29

申请号：JP2001144516

申请日：2001-05-15

Applicant: SONY CORP

Inventor： KATAOKA TOYOTAKA ,  SAITO MASAKI

IPC: C23C16/42 ,  H01L21/318 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To restrain fluctuation of a threshold voltage of a PMOS semiconductor element by obstructing diffusion of boron atoms to a silicon semiconductor substrate. SOLUTION: This method contains a process for forming an oxide film 11 on a surface of a semiconductor substrate 10; a process wherein nitrogen gas is supplied in which nitrogen element and at most 5% of hydrogen element are contained, and the oxide film 11 is nitrided by irradiation of electromagnetic waves; and a process wherein silicon material gas in which silicon element and at most 5% of hydrogen element are contained, and nitrogen gas in which nitrogen element and at most 5% of hydrogen element are contained are supplied, and a silicon nitride film 12 is formed on the oxide film 11 by irradiation of electromagnetic waves.

公开(公告)号：JP2000114395A

公开(公告)日：2000-04-21

申请号：JP28747398

申请日：1998-10-09

Applicant: SONY CORP

Inventor： TSUKAMOTO MASANORI ,  KATAOKA TOYOTAKA

IPC: H01L29/78 ,  H01L21/318 ,  H01L21/8238 ,  H01L27/092

Abstract: PROBLEM TO BE SOLVED: To prevent penetration of boron and mutual diffusion between impurities at a high-temperature treatment when manufacturing a CMOSFET and to realize a high drive current by enabling reduction in impurity density on the surface of a semiconductor substrate an NMOSFET. SOLUTION: A semiconductor device 1 is provided with a CMOSFET 4 comprising an NMOSFET 2 and a PMOSFET 3. Gate electrodes 10 of the NMOSFET 2 and the PMOSFET 3 are respectively formed by laminating layer a polysilicon film 11 and a tungsten silicide film 12 which are formed via a gate insulating film 9 on a silicon substrate 5. In this case, the polysilicon films 11 of gate electrodes 10 of both the NMOSFET 2 and the PMOSFET 3 are formed of films provided with P-type conduction. The gate insulating films 9 are formed of nitride oxide films, containing nitrogen in the maximum density region within the range of 1×1020/cm3 to 1×1022/cm3.