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公开(公告)号：JP2004244678A
公开(公告)日：2004-09-02
申请号：JP2003035474
申请日：2003-02-13
Inventor： OKITA HIROYUKI , KAWASHIMA TOSHITAKA
IPC: C23C14/34
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an upconversion thin film containing no oxide with an adequate productivity.
SOLUTION: The method for forming the upconversion thin film on a substrate includes sputtering the upconversion material containing oxides as a target with the use of the gas capable of etching the oxide as a reactant gas.
COPYRIGHT: (C)2004,JPO&NCIPIAbstract translation: 要解决的问题：提供一种制造不具有足够生产率的不含氧化物的上转换薄膜的方法。 解决方案：用于在基板上形成上转换薄膜的方法包括使用能够蚀刻氧化物的气体作为反应气体溅射含有氧化物的上转换材料作为靶。 版权所有（C）2004，JPO＆NCIPI
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公开(公告)号：JP2003086362A
公开(公告)日：2003-03-20
申请号：JP2001276140
申请日：2001-09-12
Applicant: SONY CORP
Inventor： KAWASHIMA TOSHITAKA , KURIKI SHINA , KOBAYASHI MASATO , AMANO SHUNJI
IPC: H05B33/06 , G09F9/00 , G09F9/30 , H01L27/32 , H01L51/50 , H01L51/52 , H05B33/04 , H05B33/10 , H05B33/14
Abstract: PROBLEM TO BE SOLVED: To provide an image display device in which deterioration of the organic electroluminescence element due to heat is suppressed, and freedom of layout of the picture element is high, and the numerical aperture can be improved. SOLUTION: A heat radiating region 27 including a heat conduction layer 28 is formed on the organic electroluminescent element 13 through a protection layer 26. A first and a second plugs 31, 32 as a connection point are formed at the position apart from the organic electroluminescent element 13. By positioning a plurality of holes 18A, 18B of the flexible printed-circuit board 18 and the first and second plugs 31, 32, and melting a solder in the plural holes 18A, 18B, electric connection parts 18E are formed, and the flexible printed-circuit board and the first and second plugs 31, 32 are connected. The melting heat of the solder is dispersed through the heat conduction layer 28 as shown by the arrow mark B. Since the heat radiating region 27 includes a heat insulation layer 29, the melting heat of the solder is first cut off by the heat insulation layer 29.
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公开(公告)号：JP2003036034A
公开(公告)日：2003-02-07
申请号：JP2001223885
申请日：2001-07-25
Inventor： AMANO SHUNJI , KAWASHIMA TOSHITAKA , HAGA MOTOHISA
Abstract: PROBLEM TO BE SOLVED: To securely electrically connect an electrode in the display device with the driving circuit thereof without imparting damage caused by heat, overweight or the like. SOLUTION: The terminal 106 of the electrode of a first member and the through hole-shaped conducting part 203 of a second member 5 are aligned and overlapped to each other when the first member 4 and the second member 5, which constitute a display device, are electrically connected. Then, an electrically conductive film 301 is made to be formed from the second member 5 to the conducting part 203, thus electrically the first member 4 and the second member 5 are connected.
Abstract translation: 要解决的问题：为了将显示装置中的电极与其驱动电路牢固地电连接，而不会引起由热量，超重等引起的损害。 解决方案：当构成显示装置的第一构件4和第二构件5时，第一构件的电极的端子106和第二构件5的通孔形导电部203彼此对准并重叠， 电连接。 然后，将导电膜301从第二构件5形成到导电部203，由此电连接第一构件4和第二构件5。
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公开(公告)号：JP2002343563A
公开(公告)日：2002-11-29
申请号：JP2001144483
申请日：2001-05-15
Applicant: SONY CORP
Inventor： OMI MOTOSUKE , HAYASHI HIROSHI , KAWASHIMA TOSHITAKA , KAKINUMA MASAYASU
Abstract: PROBLEM TO BE SOLVED: To provide a vacuum film-forming method that can form the film with uniform thickness without giving bending regardless of the size of the substrate, and a vacuum film-forming device. SOLUTION: The substrate 15 is supported horizontally by a substrate support tool 16 in its whole back face. The vapor deposition source 20 is arranged at the upper position of the vacuum chamber 11. The vapor deposition source 20 is constructed of heating lamps 21 that are installed on the ceiling of the vacuum chamber 11 and vapor deposition pots 22 that are arranged below the heating lamps 21. From the vapor deposition source 20, the vapor deposition material is ejected downward and piled on the surface of the substrate 15 that is positioned below the vapor deposition source 20. Not only the both ends but also the whole bottom face of the substrate 15 can be supported in contact state by the substrate support tool 16, the substrate 15 does not bend even if its size is made large, and a uniform film can be made. Vapor deposition may be made from the lateral direction by holding the substrate 15 vertically.
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公开(公告)号：JP2002072907A
公开(公告)日：2002-03-12
申请号：JP2000263628
申请日：2000-08-31
Applicant: SONY CORP
Inventor： KAWASHIMA TOSHITAKA
IPC: G02F1/136 , G02F1/1333 , G02F1/1368 , G09F9/00 , G09F9/30 , G09G3/20 , G09G3/32 , H01L21/3205 , H01L23/52 , H01L27/32 , H01L51/52 , H05B33/06 , H05K1/11 , H05K3/36
Abstract: PROBLEM TO BE SOLVED: To provide a display device having a large-sized screen. SOLUTION: This display device comprises a panel substrate as a display screen, display elements vertically and horizontally arranged on the panel substrate, and a drive circuit substrate provided with a drive circuit for driving the display elements, and the above panel substrate is subdivided into plural areas by driving wiring for driving the display elements, and plural drive circuit substrates are arranged correspondingly to each area.
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Patent Agency Ranking
公开(公告)号：JP2001116921A
公开(公告)日：2001-04-27
申请号：JP29440599
申请日：1999-10-15
Applicant: SONY CORP
Inventor： ISHIKAWA HIROKAZU , SHIMODA KAZUTO , KAKINUMA MASAYASU , KAWASHIMA TOSHITAKA , HONJO TEIJI
Abstract: PROBLEM TO BE SOLVED: To provide optical parts consisting of a plurality of layers of optical thin films on a supporting body and having good adhesion property, and to provide a method of producing that and a device for the production of optical parts. SOLUTION: An optical part 10 is obtained by laminating a large number of layers of optical thin films 13 on a transparent or semitransparent supporting body 11 with an adhesion layer 12 consisting of silicon interposed between the films 13 and the supporting body 11.
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公开(公告)号：JP2000294541A
公开(公告)日：2000-10-20
申请号：JP10063999
申请日：1999-04-07
Applicant: SONY CORP
Inventor： KAKINUMA MASAYASU , KAWASHIMA TOSHITAKA
IPC: H01L21/302 , B01J3/02 , C23C14/34 , C23C16/44 , H01L21/3065
Abstract: PROBLEM TO BE SOLVED: To provide a local vacuum treatment device for further reducing the cycle time of vacuum treatment to a work piece. SOLUTION: In a state with the opening of a main vacuum tank 10 closed, a main vacuum chamber 10a is controlled so as to be held with the vacuum level suitable for vacuum treatment of the work piece 1, and a sub-vacuum chamber 30a is controlled independently of the air pressure control of the main vacuum chamber 10a, and held with a vacuum level suitable for the vacuum treatment of the work piece 1. Thus, the evacuation or atmosphere introduction of only the sub-vacuum chamber 30a can be attained in a state such that the vacuum state of the main vacuum chamber 10a is held, and therefore the cycle time of the vacuum treatment of the work piece 1 can be reduced. Also, in a state such that the opening of the main vacuum tank 10 and an opening 32 of the sub-vacuum tank 30 are made adjacent to each other or linked with each other by contacting, a bellows 40, the etching of the work piece 1 is carried out. Thus, the etching rate can be quickened, and the cycle time of the vacuum treatment of the work piece 1 can be reduced.
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公开(公告)号：JP2000183500A
公开(公告)日：2000-06-30
申请号：JP36126398
申请日：1998-12-18
Applicant: SONY CORP
Inventor： SHIMODA KAZUTO , KAKINUMA MASAYASU , KAWASHIMA TOSHITAKA , OSAKO JUNICHI
Abstract: PROBLEM TO BE SOLVED: To provide an apparatus and a method for pattern formation, which are used to manufacturing a flexible printed-wiring board or the like and in which mass productivity is provided. SOLUTION: In this pattern formation method, a support 3 is run and moved to a take-up roll 6 via a roll 5a, a guide roll 5b and a guide roll 5c from a feed roll 4. A mask 10 is arranged so as to face the support 3. A required pattern is formed continuously on the moved support 3 through a sputtering or etching, by operating a pattern forming source 9 in a reduced pressure atmosphere.
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公开(公告)号：JP2000173981A
公开(公告)日：2000-06-23
申请号：JP35104298
申请日：1998-12-10
Applicant: SONY CORP
Inventor： KAKINUMA MASAYASU , KAWASHIMA TOSHITAKA
IPC: H01L21/302 , H01L21/3065
Abstract: PROBLEM TO BE SOLVED: To provide a local vacuum treating apparatus wherein the cycle time of a vacuum treatment for works can be reduced. SOLUTION: The vacuum treating apparatus comprises a main vacuum tank 2 having a main vacuum chamber 9, say, a first vacuum chamber inside and a sub-vacuum tank 18 having a sub-vacuum chamber 19, say, a second vacuum chamber inside. The main vacuum chamber 9 has a valve opening 10 as a first opening which a valve element 13 closes and opens. In the main vacuum chamber 9 the air control is made for holding a vacuum degree suited to the vacuum treatment with the valve opening 10 closed. The sub-vacuum chamber 19 is connected to the main chamber 9 through the valve opening 10 and has an opening 20 as a second opening to which a work 1 partly adheres. In the subchamber 19 the air control is made independently of the main chamber 9.
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公开(公告)号：JPH1154296A
公开(公告)日：1999-02-26
申请号：JP21068997
申请日：1997-08-05
Applicant: SONY CORP
Inventor： KAWASHIMA TOSHITAKA
IPC: H05H1/46 , C23C14/54 , C23C16/50 , C23F4/00 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065
Abstract: PROBLEM TO BE SOLVED: To provide a plasma generator and a plasma device by which the plasma of high concentration can be stably obtained with low pressure, and which has the low ion temperature and low electron temperature, and can easily cope with the enlargement of a diameter of a wafer. SOLUTION: A plasma generator 4 is formed by a plasma-generating chamber 4c comprising a gas inlet 4a and a plasma discharge port 4b, and an internal space of the plasma generating chamber 4c has an almost cylindrical shape. The radius of the internal space of the plasma-generating chamber 4c is larger than a width of an ion sheath generated, when the plasma is generated. A substrate holder 3 and plural plasma generators 4 are mounted opposition to each other in a process chamber 1. In this case, the plasma discharge port 4b faces the substrate holder 3 side. Plural plasma generators 4 are accumulated in such a manner that they from almost a circle corresponding to the plain shape of the wafer 2, and the accumulated area is slightly larger in area than the area of the wafer 2.
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